AL108AM infrared LED
| Manufacturer | СНГ |
| SKU | |
| Categories | LEDs |
Features
| Type | Description | |
|---|---|---|
| Color | IR | |
| Brand name | СНГ | |
| Weight g. | 0.2 | |
| Factory packaging | 500pcs | |
| Mounting type | DIP |
Description
Main technical parameters of infrared emitting diode AL108AM:
• Radiation power: not less than 2 mW at 100 mA;
• Constant forward voltage: no more than 1.6 V at 100 mA;
• Maximum spectral distribution: 0.94 µm;
• Radiation spectrum width: 0.05 µm;
• Radiation pulse rise time: 2.4 µs;
• Radiation pulse decay time: 2.0 µs;
• Maximum allowable direct forward current: 110 mA;
• The maximum allowable reverse DC voltage: 2 V;
• The maximum allowable impulse reverse voltage: 2 V.
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Transistor KT3107K
3 грн.
|
|
Transistor KT315A
2 грн.
|
|
Fuse 5x20 0.25A
1.50 грн.
|
|
Fuse 5x20 0.5A
1.50 грн.
|
|
Fuse 5x20 1.0A
1.50 грн.
|
|
Transistor KT3107Zh
3 грн.
|
|
Transistor KT209E
4 грн.
|
|
Transistor KT502A
5 грн.
|
|
Transistor KT503B
5 грн.
|
|
Capacitor 2200mF 63V 18x30mm
30 грн.
|
|
Chip KA157HP3
8 грн.
|
|
Transistor KT502B
5 грн.
|