Photoresistor FSD-G1

The main technical parameters of the photoresistor FSD-G1:
• Working voltage - constant voltage, at which nominal values of its parameters are provided: 20 V;
• Light current - the current flowing through the photoresistor at operating voltage and exposure to a radiation flux of a given intensity and spectral distribution: not less than 1500 μA;
• Dark current - current flowing through the photoresistor at operating voltage in the absence of radiation flux in the spectral sensitivity range: not more than 10 μA;
• Dark resistance - the resistance of the photoresistor in the absence of radiation incident on it in the range of its spectral sensitivity: not less than 2 mOhm;
• Multiplicity of change in resistance - the ratio of the resistance of the photoresistor when exposed to a radiation flux: not less than 150;
• Current decay time constant - the time during which the light current decreases to a value of 37% of the maximum when the photoresistor is darkened: no more than 50 ms;
• Current rise time constant - the time during which the light current increases to a value of 63% of the maximum with a rectangular shape of a single light pulse: no more than 80 ms;
• Maximum spectral distribution - wavelength corresponding to the maximum spectral sensitivity of the photoresistor: 0.77 µm.