Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Diode design |
|---|
| 29021 | ON SEMICONDUCTOR | 150947 шт |
20 грн.
|
|
2 | — | — | — | DIP | TO-220-2 | 600V | 8A | — | Fast | — | — | 50pcs | — | — | — | — | — | — | double common cathode | ||||||||||
Transistor 1T313V (=GT313V)
#14259
|
26458 | СНГ | 68363 шт |
5 грн.
|
|
Transistors 1T313V germanium diffusion-alloy structures pnp universal. Designed for use in high and ultra high frequency amplifiers and switching devices. | 1.2 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | 100мВт | 100 pieces. | 15В | 30мА | 350МГц | 230 | — | — | — | ||||||||
Transistor 1T313A (=GT313A)
#16492
|
28741 | СНГ | 59575 шт |
6 грн.
|
|
Transistors 1T313A germanium diffusion-alloy structures pnp universal. Designed for use in high and ultra high frequency amplifiers and switching devices. | 1.2 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | 100мВт | 100 pieces. | 15В | 30мА | 300МГц | 230 | — | — | — | ||||||||
Diode KD202V
#9737
|
21147 | СНГ | 41689 шт |
7 грн.
|
|
Diodes KD202V silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. Are issued in the glass-to-metal case with rigid conclusions. The type of the diode and the connection diagram of the electrodes with the leads are given on the case. The main technical characteristics of the KD202V diode: • uobp and max - Maximum impulse reverse voltage: 100 V; • inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • unp - DC forward voltage: no more than 0.9 V at inp 5 A; • iobr - Constant reverse current: no more than 800 µA at uobp 100 V | 5.2 | — | — | — | Screw | КД-11 | 100V | 5A | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | single | ||||||||
| 24139 | СНГ | 35164 шт |
5 грн.
|
|
The miniature incandescent lamp MN-26-0.12 is used for lighting and illuminating the scales of radio and electrical appliances, alarms, in pocket, portable and battery lamps, bicycle headlights, for light indication, in aerial photography equipment, etc. Miniature lamps operate on direct current from accumulators or dry cells and batteries, as well as in electrical networks of direct or alternating current with a frequency of 50 Hz. • Voltage: 26V • Current: 0.12 A • Luminous flux: 12 lm • Average burning time: 25000 h • Flask diameter: 11 mm • Lamp length: 30 mm • Base type: B9s/14. | 2.1 | — | — | — | DIP | — | — | — | — | — | — | — | 200pcs | — | — | — | — | — | — | — | |||||||||
| 28744 | СНГ | 32404 шт |
6 грн.
|
|
Transistors 1T313V OS germanium diffusion-alloy structures pnp universal. Designed for use in high and ultra high frequency amplifiers and switching devices. | 1.2 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | 100мВт | 100 pieces. | 15В | 30мА | 350МГц | 230 | — | — | — | |||||||||
Zener diode KS191A2
#15979
|
28213 | СНГ | 25981 шт |
1.50 грн.
|
|
KC191A2 zener diodes are silicon, alloy, two-anode, low power. Designed to stabilize the nominal voltage of 9.1 V in the stabilization current range of 3 ... 15 mA and bilateral voltage limitation. general purpose equipment. | 0.12 | — | — | — | — | — | — | — | — | — | — | 150мВт | 3000pcs | — | — | — | — | 9V1 | kd2 | — | ||||||||
Diode 1N4007 (MIC)
#17254
|
29510 | SEMTECH ELECTRONICS | 24973 шт |
1 грн.
|
|
1000V*1A(L=42mm) | 0.25 | — | — | — | DIP | DO-41 | 1000V | 1A | — | Rectifier | — | — | 1000pcs | — | — | — | — | — | — | single | ||||||||
Transistor 1T313B (=GT313B)
#16493
|
28742 | СНГ | 22626 шт |
6 грн.
|
|
Transistors 1T313B germanium diffusion-alloy structures pnp universal. Designed for use in high and ultra high frequency amplifiers and switching devices. | 1.2 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | 100мВт | 100 pieces. | 15В | 30мА | 450МГц | 75 | — | — | — | ||||||||
Transistor KT601AM
#676
|
21841 | СНГ | 22190 шт |
6 грн.
|
|
Si material npn structure PC,max 500mW Ucb,max 100V Uce,max 100V Ueb,max 3V Ic,max 30mA Tj,max 175ºC Ft,max 40MHz Cctip,pF 15 | 0.7 | — | TO126 | Bipolar | DIP | — | — | — | — | — | NPN | 500мВт | 500pcs | 100В | 30мА | 40МГц | 25 | — | — | — | ||||||||
Zener diode D816G
#9779
|
21349 | СНГ | 21557 шт |
6 грн.
|
|
Medium power silicon zener diode, 39V The main technical parameters of the Zener diode D816G: • Stabilization voltage spread: 35... 43 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 12 Ohm; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 130 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 4.2 | — | — | — | Screw | — | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 39V | ks620 | — | ||||||||
| 21327 | СНГ | 20899 шт |
6 грн.
|
It is a magnetically sensitive electronic proximity switch. Switches DC voltage. The magnetic characteristic is bipolar, the transfer characteristic is direct. It has one open collector output. 1 - INPUT (supply voltage), 2 - OUTPUT, 3 - GENERAL, order from the key. Signal rise time, µs 1 Min supply voltage, V 6 Max supply voltage, V 12 | 0.34 | — | — | — | DIP | — | — | — | Sensors | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||||
Zener diode KS518A
#9798
|
21352 | СНГ | 19886 шт |
3 грн.
|
|
Zener diodes KS518A silicon, planar, medium power. Designed to stabilize the rated voltage of 18 V in the stabilization current range of 1...45 mA. Are issued in the glass-to-metal case with flexible conclusions. The type of zener diode is given on the housing. The body of the zener diode in the operating mode serves as a positive electrode (anode). The mass of the zener diode is not more than 1 g. Specifications: aA0.336.002 TU. The main technical parameters of the KS518A zener diode: • Rated stabilization voltage: 18 V at Ist 5 mA; • Stabilization voltage spread: 16.2... 19.8 V; • Temperature coefficient of stabilization voltage: 0.1%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 200 Ohm at Ist 1 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 45 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С | 0.8 | — | — | — | DIP | — | — | — | — | — | — | 1Вт | 500pcs | — | — | — | — | 18V | kd-8 | — | ||||||||
Zener diode KS415A
#9759
|
21278 | СНГ | 18565 шт |
2 грн.
|
|
P=0.34W U=2.4V at Ist=20mA | 0.2 | — | — | — | DIP | — | — | — | — | — | — | 350мВт | 200pcs | — | — | — | — | 2V4 | kd-4 | — | ||||||||
Chip K555LP5
#771
|
21371 | СНГ | 15834 шт |
5 грн.
|
|
4 two-input "XOR" elements | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Optocoupler AOD133A
#9758
|
21277 | СНГ | 15276 шт |
12 грн.
|
|
Diode optocoupler. Designed for galvanic isolation of electrical circuits between which information is transmitted. | 1 | — | — | — | DIP | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
KDS111A, Diode assembly
#9760
|
21279 | СНГ | 13464 шт |
1.80 грн.
|
|
Diode assembly, each consisting of two diodes connected with a common cathode. | 0.3 | — | — | — | DIP | — | 300V | 200mA | — | Rectifier | — | — | 250pcs | — | — | — | — | — | — | double common cathode | ||||||||
Zener diode BZV55C3V3
#11463
|
23595 | PHILIPS | 11945 шт |
1 грн.
|
|
Zener diode BZV55C3V3 SOD-80 3V3 0.5W | 0.2 | — | — | — | SMD | — | — | — | — | — | — | 500мВт | 2500pcs | — | — | — | — | 3V3 | SOD-80 | — | ||||||||
Zener diode KS113A
#9780
|
21350 | СНГ | 10434 шт |
2 грн.
|
|
Zener diode low-voltage low power, 1.3V. | 0.7 | — | — | — | DIP | — | — | — | — | — | — | 180мВт | 100 pieces. | — | — | — | — | 1V3 | kd-8 | — | ||||||||
Transistor MP26A
#10812
|
23005 | СНГ | 10089 шт |
5 грн.
|
|
Transistor MP26A germanium alloyed pnp universal low-frequency. Designed to amplify and switch low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | 200мВт | 100 pieces. | 70В | 150мА | — | 50 | — | — | — | ||||||||
Optocoupler AOD101A
#14626
|
26843 | СНГ | 9638 шт |
8 грн.
|
|
AOD101A Diode optocouplers. They are formed by an emitting diode based on a gallium-aluminum arsenide compound and a silicon photodiode. | 1 | — | — | — | DIP | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Indicator lamp IN-35
#12173
|
24466 | СНГ | 9616 шт |
5 грн.
|
|
Operating voltage 100V D=6-7mm L=18-20mm Glow color red-orange Flexible conclusions. | 0.6 | — | — | — | DIP | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Transistor KT645B
#15924
|
28158 | INTEGRAL | 9126 шт |
3 грн.
|
|
0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | NPN | 500мВт | 1000pcs | 40В | 300мА | — | — | — | — | — | |||||||||
Transistor P40A
#12407
|
24742 | СНГ | 8919 шт |
5 грн.
|
|
Transistors MP40A germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. Are issued in the glass-to-metal case with flexible conclusions. | 1.8 | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | PNP | 150мВт | 100 pieces. | 30В | 30мА | 1МГц | 80 | — | — | — | ||||||||
Transistor KT361G
#6846
|
23589 | СНГ | 8176 шт |
2 грн.
|
|
Designed for use in high frequency amplifiers. | 0.2 | — | КТ-13 | Bipolar | DIP | — | — | — | — | — | PNP | 150мВт | 1000pcs | 35В | 50мА | 250МГц | 350 | — | — | — | ||||||||
Zener diode BZX79-C2V4
#9765
|
21307 | PHILIPS | 7628 шт |
1 грн.
|
|
0.2 | — | — | — | DIP | — | — | — | — | — | — | 500мВт | 10000pcs | — | — | — | — | 2V4 | DO-35 | — | |||||||||
Varicap BB545
#16044
|
28283 | SIEMENS | 7493 шт |
3 грн.
|
0.03 | — | — | — | SMD | SOD-323 | 30V | 20mA | — | — | — | — | 10000pcs | — | — | — | — | — | — | — | ||||||||||
Diode KD209A
#15525
|
27764 | СНГ | 7318 шт |
1 грн.
|
|
The main technical characteristics of the KD209A diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 700 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 700 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 400 V. | 0.4 | — | — | — | DIP | — | 400V | 700mA | — | Rectifier | — | — | 500pcs | — | — | — | — | — | — | single | ||||||||
Zener diode ZMM3V9
#16014
|
28251 | DIOTEC SEMICONDUCTOR | 7128 шт |
1 грн.
|
|
Zener diode ZMM3V9 SOD-80 3V9 0.5W | 0.2 | — | — | — | SMD | — | — | — | — | — | — | 500мВт | 2500pcs | — | — | — | — | 3V9 | SOD-80 | — | ||||||||
Chip 265UV6
#11784
|
24014 | СНГ | 7101 шт |
42 грн.
|
|
The 265UV6 chip is a cascode amplifier. | 2.1 | — | — | — | DIP | — | — | — | Amplifiers | — | — | — | 20pcs | — | — | — | — | — | — | — |
