Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Breakdown voltage | Diode design |
|---|
Transistor KT602A
#16535
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28784 | СНГ | — |
25 грн.
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— | Main technical characteristics of the KT602A transistor: • Transistor structure: npn; • Рк max - Constant collector power dissipation: 0.85 W; • Рк and max - Maximum permissible pulsed power dissipation of the collector: 2.8 W; • fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 150 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 120 V; • Uebo max - Maximum emitter-base voltage at a given reverse emitter current and open collector circuit: 5 V; • Iк max - Maximum permissible direct collector current: 75 mA; • Iк and max - Maximum permissible pulse current of the collector: 500 mA; • Ikbo - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 70 μA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 20... 80; • Ск - Capacitance of the collector junction: no more than 4 pF; • Rke us - Saturation resistance between collector and emitter: no more than 4 Ohms; • tk - Time constant of the feedback circuit at high frequency: no more than 300 ps. | 3 | — | КТЮ-3-9 | Bipolar | DIP | — | — | — | — | — | — | NPN | 2.8Вт | 100 pieces. | 100В | 500мА | 150МГц | 80 | — | — | |||||||
| 28850 | VISHAY | — |
4 грн.
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— | 0.4 | — | — | — | DIP | DO-15 | — | — | — | — | Protective | — | 600Вт | 1000pcs | — | — | — | — | 250V | — | |||||||||
| 28883 | VISHAY | — |
9 грн.
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|
— | 1.5KW series transient voltage suppressors | 1.1 | — | — | — | DIP | DO-201AD | — | — | — | — | Protective | — | 1.5кВт | 200pcs | — | — | — | — | 440V | — | ||||||||
Diode D220A
#16627
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28865 | СНГ | — |
2 грн.
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— | Main technical characteristics of the D220A diode: • Uobp max - Maximum constant reverse voltage: 70 V; • Inp max - Maximum forward current: 50 mA; • Inp and max - Maximum pulse forward current: 0.5 A; • SD - Total capacitance: 15 pF at Uobp 5 V; • Unp - Constant forward voltage: no more than 1.5 V at Inp 50 mA; • Iobp - Constant reverse current: no more than 1 µA at Uobp 70 V. | 0.3 | — | — | — | DIP | D104 | 70V | 50mA | — | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | single | |||||||
Transistor KT816G
#16628
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28866 | СНГ | — |
15 грн.
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— | Transistor KT816G silicon mesa-epitaxial-planar structure pnp amplifier. | 0.7 | — | TO126 | Bipolar | DIP | — | — | — | — | — | — | PNP | 25Вт | 200pcs | 100В | 3А | 3МГц | 25 | — | — | |||||||
| 28983 | MICROCHIP TECHNOLOGY | — |
45 грн.
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— | 0.25 | SOIC-8 | — | — | SMD | — | — | — | — | Interfaces | — | — | — | 4000pcs | — | — | — | — | — | — | |||||||||
Chip LP2985-18DBVT (LPHL)
#16855
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29101 | TEXAS INSTRUMENTS | — |
42 грн.
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— | 0.11 | SOT23-5 | — | — | SMD | — | — | — | — | Nutrition | — | — | — | 250pcs | — | — | — | — | — | — | ||||||||
Thyristor 2U101A (=KU101A)
#16883
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29129 | СНГ | — |
10 грн.
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— | Silicon thyristors 2U101A, diffusion-alloy, p-type, triode, non-locking. Designed for use as switching elements. Main technical parameters of thyristor 2U101A: • Maximum continuous reverse voltage: 10 V; • Maximum DC voltage in closed state: 50 V; • Maximum repetitive pulse current in open state: 1 A; • Average pulse current in open state: 0.075 A; • Voltage in open state: no more than 2.5 V; • Direct current in closed state: not less than 0.15 mA; • Continuous reverse current: no more than 0.15 mA; • Triggering direct control current: no more than 12 mA; • Constant unlocking control voltage: 1.5...8 V; • Voltage rise rate in closed state: 100 V/μs; • Turn-on time: 2 µs; • Switch-off time: 35 µs. | 1.8 | — | — | — | DIP | — | 50V | — | 1A | — | — | — | — | 100 pieces. | — | — | — | — | — | — | ||||||||
Transistor 1T311D (=GT311D)
#16887
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29134 | СНГ | — |
14 грн.
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— | Bipolar germanium transistor 1T311D, npn, low power, ultra-high frequency. | 1.2 | — | — | Bipolar | DIP | — | — | — | — | — | — | NPN | 150мВт | 100 pieces. | 12В | 50мА | 300МГц | 180 | — | — | |||||||
Transistor 2T608B (=KT608B)
#16891
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29138 | СНГ | — |
25 грн.
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— | Transistors 2T608B silicon epitaxial-planar structures npn switching. Designed for use in high-speed pulse and high-frequency devices. | 1.5 | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | — | NPN | 500мВт | 100 pieces. | 60В | 400мА | 200МГц | 160 | — | — | |||||||
Transistor 2T608A (=KT608A)
#16892
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29139 | СНГ | — |
25 грн.
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— | Main technical characteristics of the 2T608A transistor: • Transistor structure: npn; • Рк max - Continuous dissipated power of the collector: 0.5 W; • fgr - Cutoff frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz; • Uкбо max - Maximum collector-base voltage at a given collector reverse current and open emitter circuit: 60 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and open collector circuit: 4 V; • Iк max - Maximum permissible direct collector current: 400 mA; • Iк and max - Maximum permissible collector pulse current: 800 mA; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 10 μA (60 V); • h21э - Static current transfer coefficient of the transistor for circuits with a common emitter: 25...80; • Ck - Collector junction capacitance: no more than 15 pF; • Rke sat - Saturation resistance between collector and emitter: no more than 2.5 Ohm | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | 500мВт | 100 pieces. | 60В | 400мА | 200МГц | 80 | — | — | |||||||
Transistor 1T403G (=GT403G)
#16925
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29172 | СНГ | — |
25 грн.
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— | Transistor 1T403G germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, converters and DC stabilizers. | 3 | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 4Вт | 100 pieces. | 45В | 1,25А | — | 150 | — | — | |||||||
Transistor P303A
#16927
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29174 | СНГ | — |
20 грн.
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— | Transistors P303A silicon alloy structure pnp universal. Intended for use in switching devices, output stages of low-frequency amplifiers, DC-DC converters. | 9.2 | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 10Вт | 50pcs | 65В | 500мА | 0,1МГц | — | — | — | |||||||
Transistor P608A
#16948
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29195 | СНГ | — |
20 грн.
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— | Universal germanium transistor of pnp structure. Designed for use in amplifier, generator and pulse stages of low and high frequency up to 90 MHz. | 9.2 | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 1.5Вт | 50pcs | 30В | 600мА | 90МГц | 240 | — | — | |||||||
Diode bridge DB207
#17053
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29303 | SEP | — |
4 грн.
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— | Diode bridge 1000V, 2A. | 0.4 | — | — | — | SMD | — | 1000V | 2A | — | — | — | — | — | 50pcs | — | — | — | — | — | — | |||||||
STM32L431CCU6TR microcircuit
#17115
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29364 | ST MICROELECTRONICS | — |
140 грн.
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— | 0.39 | UFQFN-48 | — | — | SMD | — | — | — | — | Microcontrollers | — | — | — | 2500pcs | — | — | — | — | — | — |
