transistors

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
Transistor 1T313V (=GT313V)
Transistor 1T313V (=GT313V)
#14259
 26458 СНГ 68363 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistors 1T313V germanium diffusion-alloy structures pnp universal. Designed for use in high and ultra high frequency amplifiers and switching devices. 1.2 — Bipolar DIP PNP — — 100мВт 100 pieces. 15В 30мА 350МГц 230
Transistor 1T313A (=GT313A)
Transistor 1T313A (=GT313A)
#16492
 28741 СНГ 59575 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistors 1T313A germanium diffusion-alloy structures pnp universal. Designed for use in high and ultra high frequency amplifiers and switching devices. 1.2 — Bipolar DIP PNP — — 100мВт 100 pieces. 15В 30мА 300МГц 230
Transistor 1T313V OS (=GT313V)
Transistor 1T313V OS (=GT313V)
#16495
 28744 СНГ 32404 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistors 1T313V OS germanium diffusion-alloy structures pnp universal. Designed for use in high and ultra high frequency amplifiers and switching devices. 1.2 — Bipolar DIP PNP — — 100мВт 100 pieces. 15В 30мА 350МГц 230
Transistor 1T313B (=GT313B)
Transistor 1T313B (=GT313B)
#16493
 28742 СНГ 22626 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistors 1T313B germanium diffusion-alloy structures pnp universal. Designed for use in high and ultra high frequency amplifiers and switching devices. 1.2 — Bipolar DIP PNP — — 100мВт 100 pieces. 15В 30мА 450МГц 75
Transistor KT601AM
Transistor KT601AM
#676
 21841 СНГ 22190 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Si material npn structure PC,max 500mW Ucb,max 100V Uce,max 100V Ueb,max 3V Ic,max 30mA Tj,max 175ºC Ft,max 40MHz Cctip,pF 15 0.7 TO126 Bipolar DIP NPN — — 500мВт 500pcs 100В 30мА 40МГц 25
Transistor MP26A
Transistor MP26A
#10812
 23005 СНГ 10089 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistor MP26A germanium alloyed pnp universal low-frequency. Designed to amplify and switch low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 200мВт 100 pieces. 70В 150мА — 50
Transistor KT645B
Transistor KT645B
#15924
 28158 INTEGRAL 9126 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 TO92 Bipolar DIP NPN — — 500мВт 1000pcs 40В 300мА — —
Transistor P40A
Transistor P40A
#12407
 24742 СНГ 8919 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistors MP40A germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. Are issued in the glass-to-metal case with flexible conclusions. 1.8 КТЮ-3-6 Bipolar DIP PNP — — 150мВт 100 pieces. 30В 30мА 1МГц 80
Transistor KT361G
Transistor KT361G
#6846
 23589 СНГ 8126 шт
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
Designed for use in high frequency amplifiers. 0.2 КТ-13 Bipolar DIP PNP — — 150мВт 1000pcs 35В 50мА 250МГц 350
Transistor KT315A
Transistor KT315A
#6837
 22799 СНГ 3459 шт
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. 0.25 КТ-13 Bipolar DIP NPN — — 150мВт 800 pcs. 25В 100мА 250МГц 120
Transistor 1T313B OS (=GT313B)
Transistor 1T313B OS (=GT313B)
#16494
 28743 СНГ 3456 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistors 1T313B OS germanium diffusion-alloy structures pnp universal. Designed for use in high and ultra high frequency amplifiers and switching devices. 1.2 — Bipolar DIP PNP — — 100мВт 100 pieces. 15В 30мА 450МГц 75
Transistor MP21V
Transistor MP21V
#3479
 23014 СНГ 3425 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistor MP21V germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 40В 100мА 1,5МГц 100
Transistor DTA144EKAT146 (16)
Transistor DTA144EKAT146 (16)
#16953
 29200 ROHM SEMICONDUCTOR 3000 шт
4.50 грн.
10+4,27 грн.
50+4,05 грн.
100+3,60 грн.
500+3,15 грн.
0.1 SOT-346 Bipolar SMD PNP+R — — 200мВт 3000pcs 50В 100мА 250МГц —
Transistor MP25A
Transistor MP25A
#10815
 23008 СНГ 2993 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistor MP25A germanium alloy pnp universal low-frequency. Designed to amplify and switch low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 200мВт 100 pieces. 40В 150мА — 50
Transistor KP303I Ni
Transistor KP303I Ni
#14463
 26675 СНГ 2090 шт
11 грн.
10+10,45 грн.
50+9,90 грн.
100+8,80 грн.
KP303I silicon epitaxial-planar field transistors with a gate based on a pn junction and an n-type channel. The main technical characteristics of the KP303I transistor: • Transistor structure: with pn-junction and n-channel; • Rsi max - Power dissipation drain-source: 200 mW; • Uzi ots - Transistor cutoff voltage - voltage between gate and source: 0.5... 2 V; • Usi max - Maximum drain-source voltage: 25 V; • Uzs max - Maximum gate-drain voltage: 30 V; • Uzi max - Maximum gate-source voltage: 30 V; • Ic - Drain current (constant): 20 mA; • Ic start - Initial drain current: 1.5...5 mA; • S - Slope of characteristic: 2... 6 mA/V; • C11i - Transistor input capacitance - capacitance between gate and source: no more than 6 pF; • C12i - Feedback capacitance in a circuit with a common source in case of a short circuit at the AC input: no more than 2 pF. 0.4 КТ-1 Field DIP MOS n-channel 25В 20мА 200мВт 100 pieces. — — — —
Transistor KT801A
Transistor KT801A
#9884
 21664 СНГ 1989 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Transistors KT801A silicon alloy-diffusion structures npn switching. Designed for use in vertical and line scanning, secondary power supplies. Are issued in the glass-to-metal case with flexible conclusions. The device type is indicated on the case. The mass of the transistor is not more than 4 g. Hull type: KTYu-3-9. 3.5 КТЮ-3-9 Bipolar DIP NPN — — 5Вт 200pcs 80В 2А 10МГц 50
Transistor MP14A
Transistor MP14A
#10829
 23025 СНГ 1909 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
Transistor MP14A germanium alloyed pnp universal low-frequency low-power. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 30В 20мА 1МГц 40
Transistor SI2301DS (A1sHB)
Transistor SI2301DS (A1sHB)
#4708
 20277 VISHAY 1837 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.1 SOT23 Field SMD MOS p-channel 20В 2.3А 1.25Вт 3000pcs — — — —
Transistor S9014 (J6)
Transistor S9014 (J6)
#8706
 20430 BL Galaxy Electrical 1773 шт
1 грн.
10+0,95 грн.
50+0,90 грн.
100+0,80 грн.
500+0,70 грн.
0.1 SOT23 Bipolar SMD NPN — — 200мВт 3000pcs 45В 100мА 150МГц 1000
Transistor assembly 2TC393A-1
Transistor assembly 2TC393A-1
#11645
 23875 СНГ 1748 шт
22 грн.
10+20,90 грн.
50+19,80 грн.
100+17,60 грн.
Transistor assemblies consisting of two silicon epitaxial-planar structures of pnp amplifying transistors on the same chip with separate leads. Designed for use in broadband balanced, differential and operational amplifiers and other stages of hermetically sealed equipment, which require the identity of the parameters of two transistors. 4.1 — Bipolar SMD PNPx2 — — 20мВт 100 pieces. 10В 20мА 500МГц 180
Transistor P416A
Transistor P416A
#10834
 23031 СНГ 1521 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Transistor P416A germanium alloy pnp universal. Designed for use in amplifying and generator cascades in the range from long to short and ultrashort waves, as well as in pulse cascades of radio electronic devices. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 100мВт 100 pieces. 12В 25мА 60МГц 125
Transistor P213A
Transistor P213A
#9905
 21705 СНГ 1500 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Transistors P213A germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. Are issued in the glass-to-metal case with rigid conclusions. 10 — Bipolar DIP PNP — — 10Вт 50pcs 30В 5А — 20
Transistor NVMFS5C430NWFAFT1G (=430NWF)
Transistor NVMFS5C430NWFAFT1G (=430NWF)
#16735
 28982 ON SEMICONDUCTOR 1498 шт
48 грн.
10+45,60 грн.
50+43,20 грн.
100+38,40 грн.
0.2 PMPAK5x6,SO8FL, DFNW5 5x6 Field SMD MOS n-channel 40В 180А 106Вт 1500pcs. — — — —
Transistor KT339AM
Transistor KT339AM
#11372
 23482 СНГ 1462 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
Transistors silicon epitaxial-planar structures npn universal. Designed for use in high frequency amplifiers. 0.3 TO92 Bipolar DIP NPN — — 250мВт 500pcs 25В 25мА 300МГц 25
Transistor BC856B (3Bt)
Transistor BC856B (3Bt)
#2393
 22266 NXP 1437 шт
0.60 грн.
10+0,57 грн.
50+0,54 грн.
100+0,48 грн.
500+0,42 грн.
0.05 SOT23 Bipolar SMD PNP — — 250мВт 3000pcs 80В 100мА — 290
Transistor P416
Transistor P416
#10833
 23030 СНГ 1293 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistor P416 germanium alloy pnp universal. Designed for use in amplifying and generator cascades in the range from long to short and ultrashort waves, as well as in pulse cascades of radio electronic devices. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 100мВт 100 pieces. 12В 25мА 40МГц 80
Transistor BFR93AWH6327 (R2s)
Transistor BFR93AWH6327 (R2s)
#6484
 29104 INFINEON TECHNOLOGIES 1222 шт
9 грн.
10+8,55 грн.
50+8,10 грн.
100+7,20 грн.
500+6,30 грн.
0.1 SOT323 Bipolar SMD NPN — — 300мВт 3000pcs 12В 35мА 2ГГц 90
Transistor MP13B
Transistor MP13B
#10820
 23016 СНГ 1206 шт
9 грн.
10+8,55 грн.
50+8,10 грн.
100+7,20 грн.
Transistor MP13B germanium alloyed pnp universal low-frequency low-power. Designed to amplify small low-frequency signals, amplify, switch, pulse shaping. The main technical characteristics of the MP13B transistor: • Transistor structure: pnp • Рк max - Constant power dissipation of the collector: 150 mW; • fh21b - The limiting frequency of the transistor current transfer coefficient for circuits with a common emitter and a common base: at least 1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 15 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 200 µA; • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter and a common base, respectively: 45...100; • Sk - Collector junction capacitance: no more than 60 pF; • Ksh - Transistor noise figure: no more than 10 dB at a frequency of 1 kHz. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 15В 20мА 1МГц 60
Transistor MP101
Transistor MP101
#13535
 25663 СНГ 1201 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistors MP101 are silicon alloyed npn amplifying low-frequency transistors with non-standardized MP101, MP101B and standardized MP101A noise factors at a frequency of 1 kHz. 1.8 КТЮ-3-3 Bipolar DIP NPN — — 150мВт 100 pieces. 20В 20мА 0,5МГц 25
Transistor KT321B
Transistor KT321B
#13703
 25866 СНГ 1185 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistors KT321B silicon, epitaxial-planar structures pnp pulse. Designed for use in pulse amplifiers and switching devices. 1.5 КТЮ-3-6 Bipolar DIP PNP — — 210мВт 100 pieces. 50В 200мА 60МГц 120