transistors

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
Transistor MMBTA06LT1G (1GM)
Transistor MMBTA06LT1G (1GM)
#6500
 29247 ON SEMICONDUCTOR 1104 шт
1 грн.
10+0,95 грн.
50+0,90 грн.
100+0,80 грн.
500+0,70 грн.
0.1 SOT23 Bipolar SMD NPN — — 300мВт 3000pcs 80В 500мА — 100
Transistor KT660A
Transistor KT660A
#10314
 22263 INTEGRAL 1072 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
0.3 TO92 Bipolar DIP NPN — — 500мВт 1000pcs 45В 800мА — 220
Transistor MP14
Transistor MP14
#10830
 23026 СНГ 1044 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
Transistor MP14 germanium alloyed pnp universal low-frequency low-power. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 15В 20мА 1МГц 40
Transistor MP101B
Transistor MP101B
#13702
 25863 СНГ 1005 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistors MP101B are silicon alloyed npn amplifying low-frequency transistors with non-standardized MP101, MP101B and standardized MP101A noise figures at a frequency of 1 kHz. Designed to amplify and switch low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN — — 150мВт 100 pieces. 20В 20мА 0,5МГц 45
Transistor KT829G
Transistor KT829G
#13386
 25510 СНГ 998 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors KT829G silicon mezaplanar structures npn compound amplifying. Designed for use in low-frequency amplifiers, switching devices. 2.5 TO220 Bipolar DIP NPN — — 60Вт 200pcs 45В 8А 4МГц 750
Transistor BSS138 (SS)
Transistor BSS138 (SS)
#2481
 22865 ON SEMICONDUCTOR 965 шт
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
0.1 SOT23 Field SMD MOS n-channel 50В 200мА 225мВт 3000pcs — — — —
Transistor DMTH6016LFVWQ-7 (H6W)
Transistor DMTH6016LFVWQ-7 (H6W)
#16996
 29248 DIOTEC SEMICONDUCTOR 952 шт
22 грн.
10+20,90 грн.
50+19,80 грн.
100+17,60 грн.
0.25 PowerDI3333-8(SWP) Field SMD MOS n-channel 60В 41А 1.17 Вт 1000pcs — — — —
Transistor MP115
Transistor MP115
#13700
 25860 СНГ 887 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Silicon bipolar alloyed pnp transistors MP115 types in glass-to-metal housing are designed to work in pulse circuits, voltage stabilizers, DC amplifiers and other household appliances. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 60мВт 100 pieces. 30В 200мА 0,1МГц 45
Transistor KT315I
Transistor KT315I
#6842
 23552 СНГ 883 шт
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. 0.25 КТ-13 Bipolar DIP NPN — — 100мВт 800 pcs. 60В 50мА 250МГц 30
Transistor IRF3205
Transistor IRF3205
#2498
 21008 INTERNATIONAL RECTIFIER 869 шт
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
2.8 TO220AB Field DIP MOS n-channel 55В 110А 200Вт 50pcs — — — —
Transistor KT361B
Transistor KT361B
#6844
 23551 СНГ 856 шт
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
Designed for use in high frequency amplifiers. 0.2 КТ-13 Bipolar DIP PNP — — 150мВт 1000pcs 20В 50мА 250МГц 350
Transistor KT503D
Transistor KT503D
#10351
 22339 СНГ 800 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistors KT503D silicon epitaxial-planar structures npn universal. Designed for use in low-frequency amplifiers, operational and differential amplifiers, converters, pulse devices. 0.3 TO92 Bipolar DIP NPN — — 350мВт 1000pcs 60В 350мА 5МГц 120
Transistor VN2410L
Transistor VN2410L
#7289
 23578 ON SEMICONDUCTOR 789 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
0.25 TO92 Field DIP MOS n-channel 240В 200мА 350мВт 1000pcs — — — —
Transistor KT3115A-2
Transistor KT3115A-2
#10726
 22783 СНГ 775 шт
30 грн.
10+28,50 грн.
50+27 грн.
100+24 грн.
Designed for use in the input and subsequent stages of low-noise microwave amplifiers. 0.1 КТ-22 Bipolar SMD NPN — — 75мВт 200pcs — 8,5мА 5ГГц 110
Transistor MP104
Transistor MP104
#13968
 26148 СНГ 750 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
Transistors MP104 are silicon alloyed pnp amplifying low-frequency ones with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 60В 10мА 0,1МГц 10
Transistor KT604BM
Transistor KT604BM
#10321
 22271 СНГ 741 шт
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
KT604BM Transistors silicon mezaplanarny structures npn. 1 TO126 Bipolar DIP NPN — — 3Вт 200pcs 250В 200мА 40МГц 120
Transistor KT361G1
Transistor KT361G1
#10352
 22340 СНГ 680 шт
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
Designed for use in high frequency amplifiers. 0.2 КТ-13 Bipolar DIP PNP — — 150мВт 1000pcs 35В 50мА 250МГц 350
Transistor SS9015C (S9015)
Transistor SS9015C (S9015)
#8842
 20498 FAIRCHILD SEMICONDUCTOR 663 шт
1 грн.
10+0,95 грн.
50+0,90 грн.
100+0,80 грн.
500+0,70 грн.
0.3 TO92 Bipolar DIP PNP — — 450мВт 500pcs 45В 100мА 200МГц 600
Transistor BD139-16 (=KT815G)
Transistor BD139-16 (=KT815G)
#9907
 21707 INTEGRAL 650 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
500+4,20 грн.
— 1 TO126 Bipolar DIP NPN — — 12.5Вт 1000pcs 80В 1.5А — —
Transistor MP13
Transistor MP13
#14471
 26682 СНГ 645 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Transistors MP13 germanium alloy pnp universal low-frequency low-power. Designed for amplification of small low frequency signals, amplification, switching, pulse shaping, applications in ferrite transistor cells. The main technical characteristics of the MP13 transistor: • Transistor structure: pnp • Рк max - Constant power dissipation of the collector: 150 mW; • fh21b - The limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 0.5 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 15 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 200 µA; • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter and a common base, respectively: 25...55; • Sk - Collector junction capacitance: no more than 60 pF; • Ksh - Transistor noise figure: no more than 10 dB at a frequency of 1 kHz. 1.8 КТЮ-3-6 Bipolar DIP PNP — — 150мВт 100 pieces. 15В 20мА 0,5МГц 12
Transistor KT315E
Transistor KT315E
#6840
 23555 СНГ 638 шт
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. 0.25 КТ-13 Bipolar DIP NPN — — 150мВт 800 pcs. 35В 100мА 250МГц 350
Transistor MMBT4401 (2X)
Transistor MMBT4401 (2X)
#9700
 21035 FAIRCHILD SEMICONDUCTOR 638 шт
1 грн.
10+0,95 грн.
50+0,90 грн.
100+0,80 грн.
500+0,70 грн.
0.1 SOT23 Bipolar SMD NPN — — 350мВт 3000pcs 40В 600мА — 300
Transistor BC558B
Transistor BC558B
#2383
 22519 FAIRCHILD SEMICONDUCTOR 630 шт
1 грн.
10+0,95 грн.
50+0,90 грн.
100+0,80 грн.
500+0,70 грн.
0.3 TO92 Bipolar DIP PNP — — 500мВт 4000pcs 30В 100мА — 450
Transistor KT645A
Transistor KT645A
#10316
 22265 INTEGRAL 628 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 TO92 Bipolar DIP NPN — — 500мВт 1000pcs 50В 300мА — —
Transistor KT3130A9 (=ВСW71)
Transistor KT3130A9 (=ВСW71)
#10107
 21846 INTEGRAL 626 шт
2.50 грн.
10+2,37 грн.
50+2,25 грн.
100+2 грн.
0.1 SOT23 Bipolar SMD NPN — — 100мВт 1000pcs 40В 100мА 150МГц 250
Transistor BC547C
Transistor BC547C
#2231
 23481 DIOTEC SEMICONDUCTOR 608 шт
1 грн.
10+0,95 грн.
50+0,90 грн.
100+0,80 грн.
500+0,70 грн.
0.3 TO92 Bipolar DIP NPN — — 500мВт 2500pcs 45В 100мА — 400
Transistor P214V
Transistor P214V
#12366
 24701 СНГ 584 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
The main technical characteristics of the P214V transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 10 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 60 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 10 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1.5 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: more than 20; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. 10 — Bipolar DIP PNP — — 10Вт 50pcs 55В 5А — —
Transistor MP15
Transistor MP15
#3476
 23010 СНГ 533 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistor MP15 germanium alloy pnp universal low-frequency low-power. Designed for small low frequency signal amplification, amplification, switching, pulse shaping 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 15В 20мА 2МГц 60
Transistor assembly 2TC393A-1H
Transistor assembly 2TC393A-1H
#11806
 24035 СНГ 492 шт
24 грн.
10+22,80 грн.
50+21,60 грн.
100+19,20 грн.
Transistor assemblies consisting of two silicon epitaxial-planar structures of pnp amplifying transistors on the same chip with separate leads. Designed for use in broadband balanced, differential and operational amplifiers and other stages of hermetically sealed equipment, which require the identity of the parameters of two transistors. 2 — Bipolar SMD PNPx2 — — 20мВт 150pcs 10В 20мА 500МГц 180
Transistor KT502A
Transistor KT502A
#10350
 22338 СНГ 486 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistors KT502A silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters 0.3 TO92 Bipolar DIP PNP — — 350мВт 1000pcs 25В 350мА 5МГц 120