transistors

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
SS9014C (S9014)
SS9014C (S9014)
#8690
 20398 FAIRCHILD SEMICONDUCTOR 484 шт
1 грн.
10+0,95 грн.
50+0,90 грн.
100+0,80 грн.
500+0,70 грн.
0.3 TO92 Bipolar DIP NPN — — 450мВт 500pcs 45В 100мА — 600
Transistor BC327-40
Transistor BC327-40
#2379
 22516 FAIRCHILD SEMICONDUCTOR 458 шт
1 грн.
10+0,95 грн.
50+0,90 грн.
100+0,80 грн.
500+0,70 грн.
0.25 TO92 Bipolar DIP PNP — — 625мВт 4000pcs 50В 800мА — 400
Transistor MP25
Transistor MP25
#10814
 23007 СНГ 457 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistor MP25 germanium alloyed pnp universal low-frequency. Designed to amplify and switch low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 200мВт 100 pieces. 40В 150мА — 25
Transistor BC546B
Transistor BC546B
#2229
 21821 FAIRCHILD SEMICONDUCTOR 452 шт
1 грн.
10+0,95 грн.
50+0,90 грн.
100+0,80 грн.
500+0,70 грн.
0.25 TO92 Bipolar DIP NPN — — 500мВт 1000pcs 65В 100мА — 200
Transistor 2N3906
Transistor 2N3906
#2338
 20406 DIOTEC SEMICONDUCTOR 452 шт
0.70 грн.
10+0,66 грн.
50+0,63 грн.
100+0,56 грн.
500+0,49 грн.
0.25 TO92 Bipolar DIP PNP — — 625мВт 1000pcs 40В 200мА — 300
Transistor BC857C (3G)
Transistor BC857C (3G)
#2399
 23061 DIOTEC SEMICONDUCTOR 449 шт
0.60 грн.
10+0,57 грн.
50+0,54 грн.
100+0,48 грн.
500+0,42 грн.
0.05 SOT23 Bipolar SMD PNP — — 250мВт 3000pcs 50В 100мА — 520
Transistor SS9018H (S9018)
Transistor SS9018H (S9018)
#8840
 20493 FAIRCHILD SEMICONDUCTOR 448 шт
1.50 грн.
10+1,42 грн.
50+1,35 грн.
100+1,20 грн.
500+1,05 грн.
0.3 TO92 Bipolar DIP NPN — — 400мВт 500pcs 30В 50мА 1100МГц 140
Transistor KT805AM
Transistor KT805AM
#10782
 22970 СНГ 435 шт
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
Transistors silicon epitaxial structures npn switching. Designed for use in line-scan output stages, ignition devices for internal combustion engines and other switching devices. 2.5 TO220 Bipolar DIP NPN — — 30Вт 100 pieces. 60В 5А 20МГц 15
Transistor KT209E
Transistor KT209E
#10313
 22262 INTEGRAL 425 шт
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
0.3 TO92 Bipolar DIP PNP — — 200мВт 1000pcs 30В 300мА — 240
Transistor KT680A
Transistor KT680A
#14422
 26631 СНГ 422 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistor KT680A silicon epitaxial-planar structure npn amplifying. Designed for use in low frequency amplifiers. 0.3 TO92 Bipolar DIP NPN — — 350мВт 1000pcs 25В 600мА 120МГц 300
Transistor CSD17308Q3
Transistor CSD17308Q3
#17127
 29378 TEXAS INSTRUMENTS 420 шт
27 грн.
10+25,65 грн.
50+24,30 грн.
100+21,60 грн.
0.12 VSON-CLIP-8(3.3x3.3) Field SMD MOS n-channel 30В 50А 28Вт 2500pcs — — — —
Transistor KT6114V (=SS8050)
Transistor KT6114V (=SS8050)
#10102
 21840 INTEGRAL 413 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 TO92 Bipolar DIP NPN — — 1Вт 1000pcs 25В 1.5А 100МГц 80
Transistor KT520A (=MPSA42)
Transistor KT520A (=MPSA42)
#10101
 21839 INTEGRAL 409 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 TO92 Bipolar DIP NPN — — 625мВт 1000pcs 300В 500мА 50МГц 40
Transistor MP103
Transistor MP103
#13682
 25841 СНГ 398 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistor MP103 germanium alloyed npn amplifying low-frequency with non-normalized noise factors. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN — — 100мВт 100 pieces. 10В 100мА 1МГц 45
Transistor KT6115V (=SS8550)
Transistor KT6115V (=SS8550)
#10106
 21845 INTEGRAL 397 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 TO92 Bipolar DIP PNP — — 1Вт 1000pcs 25В 1.5А 100МГц 300
Transistor IRLML5103TRPBF (D7EKH)
Transistor IRLML5103TRPBF (D7EKH)
#6347
 25108 INTERNATIONAL RECTIFIER 393 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.1 SOT23 Field SMD MOS p-channel 30В 750мА 540мВт 3000pcs — — — —
Transistor KT817B
Transistor KT817B
#12236
 24615 СНГ 389 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistor KT817B silicon mesa-epitaxial-planar structure npn amplifying. 0.7 TO126 Bipolar DIP NPN — — 25Вт 200pcs 45В 3А 3МГц 40
Transistor KT853V
Transistor KT853V
#13954
 26134 СНГ 377 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors KT853V silicon planar structures pnp switching. Designed for use in amplifiers and switching devices. The main technical characteristics of the transistor KT853V: • Transistor structure: pnp; • Рк t max - Constant power dissipation of the collector with a heat sink: 60 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 7 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 60 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 8 A; • Ik and max - The maximum allowable collector pulse current: 12 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 200 μA (60V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 750; • Sk - Collector junction capacitance: no more than 120 pF; • Rke us - Saturation resistance between collector and emitter: no more than 0.66 Ohm; • toff - Turn-off time:: no more than 3300 ns 2 TO220 Bipolar DIP PNP — — 60Вт 100 pieces. 60В 8А 7МГц 750
Transistor MP106
Transistor MP106
#13536
 25664 СНГ 356 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistors MP106 silicon alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 15В 10мА 0,5МГц 100
Transistor KT3101AM
Transistor KT3101AM
#14485
 26697 СНГ 352 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
KT3101A-2 transistors are silicon epitaxial-planar npn amplifying structures with a normalized noise figure at frequencies of 1 and 2.25 GHz. Designed for use in the input and subsequent stages of microwave amplifiers. The main technical characteristics of the transistor KT3101AM: • Transistor structure: npn • Рк max - Constant power dissipation of the collector: 100 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 4000 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 15 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 2.5 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 0.5 μA (15V); • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter: 35...300; • Sk - Collector junction capacitance: no more than 1.5 pF; • Ksh - Transistor noise figure: no more than 4.5 dB at a frequency of 2.25 GHz • tk - Time constant of the feedback circuit at high frequency: no more than 10 ps. 0.25 КТ-14 Bipolar SMD NPN — — 100мВт 20pcs 15В 20мА 4ГГц 300
Transistor MP116
Transistor MP116
#11961
 24250 СНГ 339 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistors MP116 silicon alloyed pnp amplifying low-frequency with non-normalized noise factor. Designed to amplify low frequency signals. 1.5 КТЮ-3-6 Bipolar DIP PNP — — 150мВт 100 pieces. 15В 10мА 0,5МГц 100
Transistor P216A
Transistor P216A
#14714
 26932 СНГ 327 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
The main technical characteristics of the P216A transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 30 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 40 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.5 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 20... 80; • Rke us - Saturation resistance between collector and emitter: no more than 0.2 Ohm. 10 — Bipolar DIP PNP — — 30Вт 20pcs 40В 7,5A 0,1МГц 80
Transistor P605A
Transistor P605A
#11215
 23349 СНГ 326 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Transistor germanium structure pnp universal. Designed for use in amplifying, generator and pulse stages of low and high frequencies up to 30 MHz. 9.2 — Bipolar DIP PNP — — 3Вт 50pcs 40В 1.5А 30МГц 120
Transistor MP103A
Transistor MP103A
#13712
 25876 СНГ 326 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistor MP103A germanium alloyed npn amplifying low-frequency with non-normalized noise factors. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN — — 100мВт 100 pieces. 10В 100мА 1МГц 30
Transistor MMBT5401LT1G (2L)
Transistor MMBT5401LT1G (2L)
#6431
 20416 ON SEMICONDUCTOR 325 шт
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
500+1,40 грн.
0.1 SOT23 Bipolar SMD PNP — — 350мВт 3000pcs 150В 600мА — 240
Phototransistor FT-8 gr.A
Phototransistor FT-8 gr.A
#12174
 24467 СНГ 317 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Designed for use as receivers and sensors of infrared radiation as part of optoelectronic equipment, systems of photoelectric automation and non-contact temperature measurement, computer and measuring equipment. The main technical parameters of the phototransistor FT-8: • Photosensitive element size: diameter 0.5 mm; • Wavelength of maximum spectral distribution of photosensitivity: 0.9...0.95 µm; • Rated operating voltage: 5 V; • Dark current: no more than 1 μA; • Current photosensitivity: not less than 0.2 µA/lx. 0.3 — Photo DIP — — — — 400pcs — — — —
Transistor 2T903B (=KT903B)
Transistor 2T903B (=KT903B)
#12229
 24608 СНГ 311 шт
40 грн.
10+38 грн.
50+36 грн.
100+32 грн.
The main technical characteristics of the transistor 2T903B: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 30 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: more than 120 MHz; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V; • Ik max - Maximum allowable DC collector current: 3 A; • Ik and max - The maximum allowable collector pulse current: 10 A; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 40... 180; • Sk - Collector junction capacitance: no more than 180 pF; • Rke us - Saturation resistance between collector and emitter: no more than 1 ohm; • Рout - Transistor output power: not less than 10 W at 50 MHz. 22 КТЮ-3-3 Bipolar DIP NPN — — 30Вт 20pcs 60В 10А — 180
Transistor KT3128A
Transistor KT3128A
#10341
 22328 СНГ 300 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Designed for use in TV channel selectors with automatic gain control. 0.4 КТ-1 Bipolar DIP PNP — — 100мВт 500pcs 20В 20мА 800МГц 150
Transistor KT3107Zh
Transistor KT3107Zh
#10104
 21843 СНГ 297 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 TO92 Bipolar DIP PNP — — 300мВт 1000pcs 25В 200мА 200МГц 450
Transistor 2T208M1 (=KT208M)
Transistor 2T208M1 (=KT208M)
#10315
 22264 СНГ 296 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
The 2T208M1 transistor is used to amplify, generate and convert electrical signals. 0.3 TO92 Bipolar DIP PNP — — 200мВт 1000pcs 60В 300мА — 40