Transistor KT853V

Transistors KT853V silicon planar structures pnp switching.
Designed for use in amplifiers and switching devices.

The main technical characteristics of the transistor KT853V:
• Transistor structure: pnp;
• Рк t max - Constant power dissipation of the collector with a heat sink: 60 W;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 7 MHz;
• Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 60 V;
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V;
• Ik max - Maximum allowable DC collector current: 8 A;
• Ik and max - The maximum allowable collector pulse current: 12 A;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 200 μA (60V);
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 750;
• Sk - Collector junction capacitance: no more than 120 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 0.66 Ohm;
• toff - Turn-off time:: no more than 3300 ns