Transistor 2T903B (=KT903B)

Manufacturer СНГ
SKU 24608
Categories Domestic transistors
Features
Type Description
Brand name СНГ
Structure NPN
Transistor type Bipolar
Power 30Вт
Transistor case type КТЮ-3-3
Mounting type DIP
Weight g. 22
Factory packaging 20pcs
Collector-emitter voltage 60В
Collector current 10А
Current gain 180
Description

The main technical characteristics of the transistor 2T903B:
• Transistor structure: npn;
• Рк t max - Constant power dissipation of the collector with a heat sink: 30 W;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: more than 120 MHz;
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V;
• Ik max - Maximum allowable DC collector current: 3 A;
• Ik and max - The maximum allowable collector pulse current: 10 A;
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 40... 180;
• Sk - Collector junction capacitance: no more than 180 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 1 ohm;
• Рout - Transistor output power: not less than 10 W at 50 MHz.