Transistor P214V

Manufacturer СНГ
SKU 24701
Categories Domestic transistors
Features
Type Description
Brand name СНГ
Structure PNP
Transistor type Bipolar
Power 10Вт
Mounting type DIP
Weight g. 10
Factory packaging 50pcs
Collector-emitter voltage 55В
Collector current
Description

The main technical characteristics of the P214V transistor:
• Transistor structure: pnp
• Рк t max - Constant power dissipation of the collector with a heat sink: 10 W;
• fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz;
• Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 60 V;
• Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 10 V;
• Ik max - Maximum allowable DC collector current: 5 A;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1.5 mA;
• h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: more than 20;
• Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm.