Transistor P214V

  • Transistor P214V
Vendor code: 24701
in stock (68 pc.)
12 грн.
Доступные скидки
Название Скидка Скидка, % Цена
10+ 0.60 грн. 5 11.40 грн.
50+ 1.20 грн. 10 10.80 грн.
100+ 2.40 грн. 20 9.60 грн.

The main technical characteristics of the P214V transistor:
• Transistor structure: pnp
• Рк t max - Constant power dissipation of the collector with a heat sink: 10 W;
• fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz;
• Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 60 V;
• Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 10 V;
• Ik max - Maximum allowable DC collector current: 5 A;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1.5 mA;
• h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: more than 20;
• Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm.

Brand nameСНГ
StructurePNP
Transistor typeБиполярный
Power10Вт
Mounting typeDIP
Weight g.10
Factory packaging20шт.
Collector-emitter voltage55В
Collector current

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