transistors

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
Transistor KT834B
Transistor KT834B
#16517
 28765 СНГ —
200 грн.
10+190 грн.
50+180 грн.
100+160 грн.
 — KT834A transistors are silicon mesaplanar npn composite amplifier structures. Designed for use in current and voltage regulators, in switching devices. 15 TO3 Bipolar DIP NPN 100Вт 20pcs 450В 20А 4МГц 3000
Transistor 2T812B (=KT812B)
Transistor 2T812B (=KT812B)
#16518
 28766 СНГ —
70 грн.
10+66,50 грн.
50+63 грн.
100+56 грн.
 — Main technical characteristics of transistor 2T812B: • Transistor structure: npn; • Pk t max - Constant power dissipation of the collector with heat sink: 50 W; • fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 3 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 300 V (0.1 kOhm); • Uebo max - Maximum emitter-base voltage at a given reverse emitter current and open collector circuit: 7 V; • Iк max - Maximum permissible direct collector current: 8 A; • Iк and max - Maximum permissible pulse current of the collector: 12 A; • Iker - Reverse collector-emitter current at a given reverse collector-emitter voltage and resistance in the base-emitter circuit: 5 mA (700V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 4; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. 15 TO3 Bipolar DIP NPN 50Вт 40pcs 300В 10А 3МГц —
Transistor KT602A
Transistor KT602A
#16535
 28784 СНГ —
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
 — Main technical characteristics of the KT602A transistor: • Transistor structure: npn; • Рк max - Constant collector power dissipation: 0.85 W; • Рк and max - Maximum permissible pulsed power dissipation of the collector: 2.8 W; • fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 150 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 120 V; • Uebo max - Maximum emitter-base voltage at a given reverse emitter current and open collector circuit: 5 V; • Iк max - Maximum permissible direct collector current: 75 mA; • Iк and max - Maximum permissible pulse current of the collector: 500 mA; • Ikbo - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 70 μA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 20... 80; • Ск - Capacitance of the collector junction: no more than 4 pF; • Rke us - Saturation resistance between collector and emitter: no more than 4 Ohms; • tk - Time constant of the feedback circuit at high frequency: no more than 300 ps. 3 КТЮ-3-9 Bipolar DIP NPN 2.8Вт 100 pieces. 100В 500мА 150МГц 80
Transistor KT816G
Transistor KT816G
#16628
 28866 СНГ —
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
 — Transistor KT816G silicon mesa-epitaxial-planar structure pnp amplifier. 0.7 TO126 Bipolar DIP PNP 25Вт 200pcs 100В 3А 3МГц 25
Transistor 1T311D (=GT311D)
Transistor 1T311D (=GT311D)
#16887
 29134 СНГ —
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
 — Bipolar germanium transistor 1T311D, npn, low power, ultra-high frequency. 1.2 — Bipolar DIP NPN 150мВт 100 pieces. 12В 50мА 300МГц 180
Transistor 2T608B (=KT608B)
Transistor 2T608B (=KT608B)
#16891
 29138 СНГ —
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
 — Transistors 2T608B silicon epitaxial-planar structures npn switching. Designed for use in high-speed pulse and high-frequency devices. 1.5 КТЮ-3-6 Bipolar DIP NPN 500мВт 100 pieces. 60В 400мА 200МГц 160
Transistor 2T608A (=KT608A)
Transistor 2T608A (=KT608A)
#16892
 29139 СНГ —
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
 — Main technical characteristics of the 2T608A transistor: • Transistor structure: npn; • Рк max - Continuous dissipated power of the collector: 0.5 W; • fgr - Cutoff frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz; • Uкбо max - Maximum collector-base voltage at a given collector reverse current and open emitter circuit: 60 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and open collector circuit: 4 V; • Iк max - Maximum permissible direct collector current: 400 mA; • Iк and max - Maximum permissible collector pulse current: 800 mA; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 10 μA (60 V); • h21э - Static current transfer coefficient of the transistor for circuits with a common emitter: 25...80; • Ck - Collector junction capacitance: no more than 15 pF; • Rke sat - Saturation resistance between collector and emitter: no more than 2.5 Ohm 1.8 КТЮ-3-3 Bipolar DIP NPN 500мВт 100 pieces. 60В 400мА 200МГц 80
Transistor 1T403G (=GT403G)
Transistor 1T403G (=GT403G)
#16925
 29172 СНГ —
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
 — Transistor 1T403G germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, converters and DC stabilizers. 3 — Bipolar DIP PNP 4Вт 100 pieces. 45В 1,25А — 150
Transistor P303A
Transistor P303A
#16927
 29174 СНГ —
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
 — Transistors P303A silicon alloy structure pnp universal. Intended for use in switching devices, output stages of low-frequency amplifiers, DC-DC converters. 9.2 — Bipolar DIP PNP 10Вт 50pcs 65В 500мА 0,1МГц —
Transistor P608A
Transistor P608A
#16948
 29195 СНГ —
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
 — Universal germanium transistor of pnp structure. Designed for use in amplifier, generator and pulse stages of low and high frequency up to 90 MHz. 9.2 — Bipolar DIP PNP 1.5Вт 50pcs 30В 600мА 90МГц 240