Transistor KT602A

Main technical characteristics of the KT602A transistor:
• Transistor structure: npn;
• Рк max - Constant collector power dissipation: 0.85 W;
• Рк and max - Maximum permissible pulsed power dissipation of the collector: 2.8 W;
• fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 150 MHz;
• Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 120 V;
• Uebo max - Maximum emitter-base voltage at a given reverse emitter current and open collector circuit: 5 V;
• Iк max - Maximum permissible direct collector current: 75 mA;
• Iк and max - Maximum permissible pulse current of the collector: 500 mA;
• Ikbo - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 70 μA;
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 20... 80;
• Ск - Capacitance of the collector junction: no more than 4 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 4 Ohms;
• tk - Time constant of the feedback circuit at high frequency: no more than 300 ps.