Transistor KT626A

Manufacturer СНГ
SKU 28714
Categories Domestic transistors
Tags domestic
Features
Type Description
Brand name СНГ
Structure PNP
Transistor type Bipolar
Power 6Вт
Transistor case type TO126
Mounting type DIP
Weight g. 0.7
Factory packaging 500pcs
Collector-emitter voltage 45В
Collector current 500мА
Current gain 40
Frequency 70МГц
Description

Main technical characteristics of the KT626A transistor:
• Transistor structure: pnp;
• Рк max - Constant collector power dissipation: 6.5 W;
• fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 75 MHz;
• Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 45 V;
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and open collector circuit: 4 V;
• Iк max - Maximum permissible direct collector current: 500 mA;
• Ikbo - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 10 μA (30V);
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 40... 260;
• Ск - Capacitance of the collector junction: no more than 150 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 2 Ohms;
• tk - Time constant of the feedback circuit at high frequency: no more than 500 ps.