Transistor 2T608A (=KT608A)

Manufacturer СНГ
SKU 29139
Categories Domestic transistors
Features
Type Description
Brand name СНГ
Structure NPN
Transistor type Bipolar
Power 500мВт
Transistor case type КТЮ-3-3
Mounting type DIP
Weight g. 1.8
Factory packaging 100 pieces.
Collector-emitter voltage 60В
Collector current 400мА
Current gain 80
Frequency 200МГц
Description

Main technical characteristics of the 2T608A transistor:
• Transistor structure: npn;
• Рк max - Continuous dissipated power of the collector: 0.5 W;
• fgr - Cutoff frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz;
• Uкбо max - Maximum collector-base voltage at a given collector reverse current and open emitter circuit: 60 V;
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and open collector circuit: 4 V;
• Iк max - Maximum permissible direct collector current: 400 mA;
• Iк and max - Maximum permissible collector pulse current: 800 mA;
• Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 10 μA (60 V);
• h21э - Static current transfer coefficient of the transistor for circuits with a common emitter: 25...80;
• Ck - Collector junction capacitance: no more than 15 pF;
• Rke sat - Saturation resistance between collector and emitter: no more than 2.5 Ohm