transistors
Filter layout:
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| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Transistor case type | Transistor type | Mounting type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain |
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Transistor KT850A
#14418
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26627 | СНГ | — |
22 грн.
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— | Transistors KT850A silicon mezaplanar structures npn amplifying. Designed for use in power amplifiers, switching devices. | 2.5 | TO220 | Bipolar | DIP | NPN | — | — | 25Вт | 100 pieces. | 200В | 2А | 20МГц | 200 | |||||||||
Transistor 1T901A
#14419
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26628 | СНГ | — |
30 грн.
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— | Transistors germanium diffusion-alloy pnp switching high-frequency powerful. | 25 | — | Bipolar | DIP | PNP | — | — | 15Вт | 20pcs | 50В | 10А | 30МГц | 60 | |||||||||
Transistor KT859A
#14420
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26629 | СНГ | — |
12 грн.
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— | Transistor KT859A silicon mezaplanar structure npn switching. Designed for use in amplifiers and switching devices. | 2.5 | TO220 | Bipolar | DIP | NPN | — | — | 40Вт | 100 pieces. | 800В | 3А | 10МГц | 10 | |||||||||
Transistor KT326BM
#14421
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26630 | СНГ | — |
3 грн.
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— | Transistors KT326BM silicon epitaxial-planar structures pnp amplifying, high-frequency. Designed for use in high and ultra high frequency amplifiers and switching devices. | 0.3 | TO92 | Bipolar | DIP | PNP | — | — | 200мВт | 1000pcs | 15В | 50мА | 250МГц | 160 | |||||||||
Transistor GT320B
#14474
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26685 | СНГ | — |
12 грн.
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— | Transistors GT320B germanium diffusion-alloy structures pnp switching. Designed for use in high frequency amplifiers and switching devices. | 1.8 | КТЮ-3-6 | Bipolar | DIP | PNP | — | — | 200мВт | 100 pieces. | 11В | 150мА | 80МГц | 120 | |||||||||
Transistor GT308A
#14475
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26686 | СНГ | — |
7 грн.
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— | Transistors GT308A germanium diffusion-alloy structures pnp universal. Designed for use in oscillators, power amplifiers, pulse devices. | 1.8 | КТЮ-3-3 | Bipolar | DIP | PNP | — | — | 150мВт | 100 pieces. | 15В | 50мА | 100МГц | 75 | |||||||||
Transistor P401
#14476
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26687 | СНГ | — |
8 грн.
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— | Transistors P401 - germanium, amplifying low-power, high-frequency, structures - pnp. Designed for use in amplifying and generator stages of shortwave and ultrashortwave radio transmitting devices. | 1.8 | КТЮ-3-6 | Bipolar | DIP | PNP | — | — | 100мВт | 100 pieces. | 10В | 20мА | 30МГц | 300 | |||||||||
Transistor P403VP
#14477
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26688 | СНГ | — |
9 грн.
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— | Transistor P403VP - germanium, amplifying low-power, high-frequency, structures - pnp. | 1.8 | КТЮ-3-3 | Bipolar | DIP | PNP | — | — | 100мВт | 100 pieces. | 10В | 20мА | 120МГц | 100 | |||||||||
Transistor P403A
#14478
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26689 | СНГ | — |
10 грн.
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— | Transistor P403A - germanium, amplifying low-power, high-frequency, structures - pnp. | 1.8 | КТЮ-3-3 | Bipolar | DIP | PNP | — | — | 100мВт | 100 pieces. | 10В | 20мА | 120МГц | 200 | |||||||||
Transistor P423
#14479
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26690 | СНГ | — |
10 грн.
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— | Germanium transistors, diffusion-alloyed, pnp, amplifying, low-power with a normalized noise figure at a frequency of 1.6 MHz. Are intended for work in amplifying and generator cascades HF cascades. | 1.5 | КТЮ-3-3 | Bipolar | DIP | PNP | — | — | 100мВт | 100 pieces. | 10В | 20мА | 120МГц | 100 | |||||||||
Transistor BU508AW
#14483
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26695 | ST MICROELECTRONICS | — |
64 грн.
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— | 5.3 | TO247 | Bipolar | DIP | NPN | — | — | 125Вт | 25pcs | 700В | 8А | — | — | ||||||||||
Transistor KT3120AM
#14484
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26696 | СНГ | — |
15 грн.
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— | KT3120AM transistors are silicon epitaxial-planar npn amplifying structures with a normalized noise figure at a frequency of 400 MHz. Designed for use in the input and subsequent stages of microwave amplifiers. The main technical characteristics of the transistor KT3120AM: • Transistor structure: npn • Рк max - Constant power dissipation of the collector: 100 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 1800 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 15 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.5 μA; • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter: more than 40; • Sk - Collector junction capacitance: no more than 2 pF; • tk - Time constant of the feedback circuit at high frequency: no more than 8 ps. | 0.2 | КТ-14 | Bipolar | SMD | NPN | — | — | 100мВт | 20pcs | 15В | 20мА | — | 40 | |||||||||
Transistor 1T906A (=GT906A)
#14615
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26831 | СНГ | — |
28 грн.
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— | Transistors 1T906A germanium diffusion-alloy structures pnp switching. Designed for use in voltage converters, switching and pulse amplifying stages of radio electronic devices. The main technical characteristics of the transistor 1T906A: • Structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 15 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 30 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 75 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 1.4 V; • Ik max - Maximum allowable DC collector current: 10 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 8 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 30...150; • tk - Time constant of the feedback circuit at high frequency: no more than 5000 ps. | 3.5 | — | Bipolar | DIP | PNP | — | — | 15Вт | 100 pieces. | 75В | 10А | 30МГц | 150 | |||||||||
Transistor GT115D
#14617
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26833 | СНГ | — |
6 грн.
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— | Transistors GT115D germanium alloy pnp low-power. | 0.4 | — | Bipolar | DIP | PNP | — | — | 50мВт | 100 pieces. | 20В | 30мА | 1МГц | 250 | |||||||||
Transistor KT961A
#14620
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26836 | СНГ | — |
5 грн.
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— | The main technical characteristics of the transistor KT961A: • Transistor structure: npn; • Рк max - Constant power dissipation of the collector: 1 W; • Pk and max - The maximum allowable pulse power dissipation of the collector: 12.5 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 50 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 100 V (1 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 1.5 A; • Ik and max - The maximum allowable collector pulse current: 2 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 10 μA (60V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 40...100; • Rke us - Saturation resistance between collector and emitter: no more than 1 ohm. | 1 | TO126 | Bipolar | DIP | NPN | — | — | 12.5Вт | 100 pieces. | 100В | 2А | 50МГц | 100 | |||||||||
Transistor 2N3055B
#14622
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26838 | Inchange Semiconductor | — |
25 грн.
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— | 10 | TO3 | Bipolar | DIP | NPN | — | — | 115Вт | 25pcs | 60В | 15А | — | 140 | ||||||||||
Transistor KT501G Au
#14627
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26844 | СНГ | — |
20 грн.
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— | The main technical characteristics of the transistor KT501G: • Transistor structure: pnp; • Рк max - Constant power dissipation of the collector: 350 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 5 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given (final) resistance in the base-emitter circuit: 30 V (10 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 10 V; • Ik max - Maximum allowable DC collector current: 300 mA; • Ik and max - The maximum allowable collector pulse current: 500 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1 μA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 20... 60; • Sk - Collector junction capacitance: no more than 50 pF; • Rke us - Saturation resistance between collector and emitter: no more than 1.3 Ohm. | 0.6 | КТ-1-7 | Bipolar | DIP | PNP | — | — | 350мВт | 100 pieces. | 30В | 300мА | 5МГц | 60 | |||||||||
Transistor GT403G
#15473
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27712 | СНГ | — |
17 грн.
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— | Транзистор ГТ403Г германиевый сплавный структуры p-n-p усилительный. Предназначен для применения в переключающих устройствах, выходных каскадах усилителей низкой частоты, преобразователях и стабилизаторах постоянного тока. | 3 | — | Bipolar | DIP | PNP | — | — | 4Вт | 100 pieces. | 45В | 1,25А | — | 150 | |||||||||
Transistor P29
#15474
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27713 | СНГ | — |
6 грн.
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— | Transistors P29 low power germanium alloy transistors, medium frequency, pnp conductivity. Are intended for work in the radio equipment in the switching and impulse modes. | 1.8 | КТЮ-3-3 | Bipolar | DIP | PNP | — | — | 30мВт | 100 pieces. | 12В | 6mA | 5МГц | 50 | |||||||||
Transistor MP11A
#16002
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28237 | СНГ | — |
10 грн.
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— | Main technical characteristics of the MP11A transistor: • Transistor structure: n-p-n • Рк max - Constant dissipated collector power: 150 mW; • fh21b - Limiting frequency of the transistor current transfer coefficient for circuits with a common emitter and common base: not less than 2 MHz; • Ucbo probe - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 15 V; • Uebo probe - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Ik max - Maximum allowable direct collector current: 20 mA; • h21e - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter and a common base, respectively: 45 ...100; • Sk - Capacitance of the collector junction: no more than 60 pF. | 1.8 | КТЮ-3-3 | Bipolar | DIP | NPN | — | — | 150мВт | 50pcs | 15В | 150мА | 2МГц | 100 | |||||||||
Transistor P203E
#16184
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28428 | СНГ | — |
20 грн.
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— | Characteristics of the transistor P203E: PNP structure Uk-e.max. 55V Uk-b.max. 70V Ik.max (permanent) 2A Ib.max. (permanent) 0.75A Pk.max. (without heatsink) 1.0W Pk.max. (with heat sink) 10W Switching power, max 30W Ik.obr., at t=+20ºC no more than 0.02-0.4mA Ik.obr., at t=+60ºC no more than 0.2-3.5mA h21e 40..100 fgr. 200kHz Ub-e.us 0.5-2.0V Uk-e.us 0.5-2.5V Temperature range -55..+70°C. | 10 | — | Bipolar | DIP | PNP | — | — | 10Вт | 50pcs | 55В | 2А | 0,2МГц | 100 | |||||||||
Транзистор КП934Б
#16244
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28490 | СНГ | — |
36 грн.
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— | Транзистор КП934Б кремниевый планарный полевой со статической индукцией и каналом n-типа. | 17 | TO3 | Field | DIP | MOS n-channel | 300В | 10А | 40Вт | 10 pieces. | — | — | — | — | |||||||||
Transistor GT906A
#16252
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28499 | СНГ | — |
15 грн.
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— | Transistors GT906A germanium diffusion-alloy pnp switching structures. Designed for use in voltage converters, switching and pulse amplifying stages of radio electronic devices. The main technical characteristics of the transistor GT906A: • Structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 15 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 30 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 75 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 1.4 V; • Ik max - Maximum allowable DC collector current: 10 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 8 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 30...150; • tk - Time constant of the feedback circuit at high frequency: no more than 5000 ps. | 3.5 | — | Bipolar | DIP | PNP | — | — | 15Вт | 100 pieces. | 75В | 10А | 30МГц | 150 | |||||||||
Transistor KT827B
#16253
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28500 | СНГ | — |
100 грн.
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— | Main technical characteristics of the KT827B transistor: • Transistor structure: npn; • Ркт max - Constant power dissipation of the collector with heat sink: 125 W; • fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 4 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 80 V (1 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 20 A; • Iк and max - Maximum permissible pulse current of the collector: 40 A; • Iker - Reverse collector-emitter current at a given reverse collector-emitter voltage and resistance in the base-emitter circuit: 3 mA (100V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 750... 18000; • Ск - Capacitance of the collector junction: no more than 400 pF; • Rke us - Saturation resistance between collector and emitter: no more than 0.2 Ohm. | 15 | TO3 | Bipolar | DIP | NPN | — | — | — | 40pcs | 80В | 20А | 4МГц | 750 | |||||||||
Transistor BSZ160N10NS3 G
#16259
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28507 | INFINEON TECHNOLOGIES | — |
50 грн.
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— | 0.1 | TSDSON-8 | Field | SMD | MOS n-channel | 100В | 40А | 63Вт | 1000pcs | — | — | — | — | ||||||||||
Transistor KT817G
#16465
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28712 | СНГ | — |
14 грн.
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— | Transistor KT817G silicon mesa-epitaxial-planar structure npn amplifier. | 0.7 | TO126 | Bipolar | DIP | NPN | — | — | 25Вт | 200pcs | 100В | 3А | 3МГц | 40 | |||||||||
Transistor GT321D
#16470
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28720 | СНГ | — |
10 грн.
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— | GT321D transistors are germanium conversion pnp switching structures. Designed for use in switching devices. | 1.8 | КТЮ-3-3 | Bipolar | DIP | PNP | — | — | 150мВт | 100 pieces. | 45В | 200мА | 60МГц | 120 | |||||||||
Transistor GT321E
#16471
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28721 | СНГ | — |
10 грн.
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— | GT321E transistors are germanium conversion pnp switching structures. Designed for use in switching devices. | 1.8 | КТЮ-3-3 | Bipolar | DIP | PNP | — | — | 150мВт | 100 pieces. | 45В | 200мА | 60МГц | 200 | |||||||||
Transistor GT321G
#16472
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28722 | СНГ | — |
10 грн.
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— | GT321G transistors are germanium conversion pnp switching structures. Designed for use in switching devices. | 1.8 | КТЮ-3-3 | Bipolar | DIP | PNP | — | — | 150мВт | 100 pieces. | 45В | 200мА | 60МГц | 60 | |||||||||
Transistor KT321V
#16476
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28725 | СНГ | — |
6 грн.
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— | KT321V silicon transistors, epitaxial-planar pnp pulse structures. Designed for use in pulse amplifiers and switching devices. | 1.5 | КТЮ-3-6 | Bipolar | DIP | PNP | — | — | 210мВт | 100 pieces. | 50В | 200мА | 60МГц | 200 |