Transistor KT827B

Main technical characteristics of the KT827B transistor:
• Transistor structure: npn;
• Ркт max - Constant power dissipation of the collector with heat sink: 125 W;
• fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 4 MHz;
• Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 80 V (1 kOhm);
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V;
• Ik max - Maximum allowable DC collector current: 20 A;
• Iк and max - Maximum permissible pulse current of the collector: 40 A;
• Iker - Reverse collector-emitter current at a given reverse collector-emitter voltage and resistance in the base-emitter circuit: 3 mA (100V);
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 750... 18000;
• Ск - Capacitance of the collector junction: no more than 400 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 0.2 Ohm.