transistors
Filter layout:
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| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Transistor case type | Transistor type | Mounting type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain |
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Transistor GT321A
#13541
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25672 | СНГ | — |
8 грн.
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— | Transistors GT321A germanium conversion structures pnp switching. Designed for use in switching devices. | 1.8 | КТЮ-3-3 | Bipolar | DIP | PNP | — | — | 150мВт | 100 pieces. | 50В | 200мА | 60МГц | 60 | |||||||||
Transistor GT322B
#13544
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25675 | СНГ | — |
8 грн.
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— | Transistors GT322B germanium diffusion-alloy structures pnp amplifying with a normalized noise figure. Designed for use in intermediate and high frequency amplifiers. | 0.5 | КТ-1-7 | Bipolar | DIP | PNP | — | — | 50мВт | 100 pieces. | 6В | 10мА | 80МГц | 120 | |||||||||
Transistor GT322V
#13545
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25676 | СНГ | — |
8 грн.
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— | Transistors GT322V germanium diffusion-alloy structures pnp amplifying with a normalized noise figure. Designed for use in intermediate and high frequency amplifiers. | 0.5 | КТ-1-7 | Bipolar | DIP | PNP | — | — | 50мВт | 100 pieces. | 10В | 10мА | 50МГц | 200 | |||||||||
| 25677 | СНГ | — |
10 грн.
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— | Transistors silicon epitaxial-planar structures npn universal. Designed for use in high frequency amplifiers. | 0.5 | КТ-1-7 | Bipolar | DIP | NPN | — | — | 150мВт | 100 pieces. | 10В | 50мА | 600МГц | 100 | ||||||||||
Transistor MP36A
#13547
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25679 | СНГ | — |
6 грн.
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— | Transistor germanium alloy npn amplifying low-frequency with non-standardized and normalized at a frequency of 1 kHz noise figure. Designed to amplify low frequency signals. | 1.8 | КТЮ-3-3 | Bipolar | DIP | NPN | — | — | 150мВт | 100 pieces. | 15В | 20мА | 1МГц | 45 | |||||||||
Transistor MP40
#13548
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25681 | СНГ | — |
5 грн.
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— | Transistors MP40 germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. Are issued in the glass-to-metal case with flexible conclusions. | 1.8 | КТЮ-3-6 | Bipolar | DIP | PNP | — | — | 150мВт | 100 pieces. | 30В | 30мА | 1МГц | 40 | |||||||||
Transistor MP20
#13549
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25682 | СНГ | — |
6 грн.
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— | Transistor MP20 germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits. | 1.8 | КТЮ-3-3 | Bipolar | DIP | PNP | — | — | 150мВт | 100 pieces. | 30В | 50мА | 2МГц | 150 | |||||||||
Transistor GT402D
#13679
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25838 | СНГ | — |
42 грн.
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— | Transistor GT402D germanium alloy structure pnp amplifying. Designed for use in the output stages of low-frequency amplifiers. | 3.5 | — | Bipolar | DIP | PNP | — | — | 600мВт | 50pcs | 25В | 500мА | 1МГц | 80 | |||||||||
Transistor GT402I
#13680
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25839 | СНГ | — |
45 грн.
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— | Transistor GT402I germanium alloy structure pnp amplifying. Designed for use in the output stages of low-frequency amplifiers. | 3.5 | — | Bipolar | DIP | PNP | — | — | 600мВт | 50pcs | 40В | 500мА | 1МГц | 150 | |||||||||
Transistor MP10B
#13699
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25859 | СНГ | — |
8 грн.
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— | Transistor MP10 germanium alloyed npn amplifying low-frequency with non-normalized noise factors. Designed to amplify low frequency signals. The main technical characteristics of the MP10B transistor: • Transistor structure: npn • Рк max - Constant power dissipation of the collector: 150 mW; • fh21b - The limiting frequency of the transistor current transfer coefficient for circuits with a common emitter and a common base: at least 1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 15 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 50 μA; • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter and a common base, respectively: 25...50; • Sk - Collector junction capacitance: no more than 60 pF; • tk - Time constant of the feedback circuit at high frequency: no more than 5000 ps; • Ksh - Transistor noise figure: no more than 10 dB at a frequency of 1 kHz. | 1.8 | КТЮ-3-3 | Bipolar | DIP | NPN | — | — | 150мВт | 100 pieces. | 30В | 20мА | 1МГц | 50 | |||||||||
Transistor MP42
#13701
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25862 | СНГ | — |
5 грн.
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— | PNP structure Max. e.g. k-b at a given reverse current to and open circuit e. (Ukbo max), V 15 Max. e.g. k-e at a given current to and a given resist. in the circuit b-e. (Uker max), V 15 The maximum allowable current to (Ik max, A) 0.2 Static current transfer coefficient h21e min 20…35 Limiting frequency of the current transfer coefficient fgr, MHz 1 Maximum dissipated power k (Pk, W) 0.2 | 1.6 | КТЮ-3-6 | Bipolar | DIP | PNP | — | — | 200мВт | 100 pieces. | 15В | 200мА | 1МГц | 35 | |||||||||
Transistor KT848A
#13752
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25920 | СНГ | — |
90 грн.
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— | Transistors KT848A silicon mezaplanar structures npn amplifying. Are intended for application in electronic circuits of ignition of the automobile radio-electronic equipment. The main technical characteristics of the transistor KT848A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 35 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 3 MHz; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 15 A; • Iкer - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 3 mA (400V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 20; • Rke us - Saturation resistance between collector and emitter: no more than 0.2 Ohm. | 15 | TO3 | Bipolar | DIP | NPN | — | — | 35Вт | 40pcs | 400В | 15А | 3МГц | 20 | |||||||||
Transistor 2T803A (=KT803A)
#13841
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26847 | СНГ | — |
200 грн.
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— | Transistors 2T803A silicon mezaplanar structures npn universal. Designed for use in DC amplifiers, horizontal sweep generators, secondary power supplies. | 19 | КТЮ-3-3 | Bipolar | DIP | NPN | — | — | 60Вт | 20pcs | 60В | 10А | 20МГц | 50 | |||||||||
Transistor 1T806A (=GT806A)
#13842
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26019 | СНГ | — |
40 грн.
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— | 1T806A Transistors germanium diffusion-alloy structures pnp switching. Transistors 1T806A, 1T806B, 1T806V are designed for use in pulse devices, converters and current and voltage stabilizers. The main technical characteristics of the transistor 1T806A: • Structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 30 W; • fh21b - The limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: at least 10 MHz; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 2 V; • Ik max - Maximum allowable DC collector current: 20 A; • h21e - Voltage feedback coefficient of the transistor in the small signal mode for circuits with a common emitter and a common base, respectively: 10...100; • Rke us - Saturation resistance between collector and emitter: no more than 0.04 Ohm. | 22 | КТЮ-3-3 | Bipolar | DIP | PNP | — | — | 30Вт | 20pcs | 40В | 20А | 10МГц | 100 | |||||||||
Transistor 2T808A (=KT808A)
#13843
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26020 | СНГ | — |
150 грн.
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— | The main technical characteristics of the transistor 2T808A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 50W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 7.2 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 120 (250 imp.) V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V; • Ik max - Maximum allowable DC collector current: 10 A; • IКеr - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 3 mA (120V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 10... 50; • Sk - Collector junction capacitance: no more than 500 pF. | 30 | КТЮ-3-20 | Bipolar | DIP | NPN | — | — | 50Вт | 10 pieces. | 120В | 10А | — | 50 | |||||||||
Transistor KT805BM
#13925
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26104 | СНГ | — |
12 грн.
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— | Transistors silicon epitaxial structures npn switching. Designed for use in line-scan output stages, ignition devices for internal combustion engines and other switching devices. | 2.5 | TO220 | Bipolar | DIP | NPN | — | — | 30Вт | 100 pieces. | 60В | 5А | 20МГц | 15 | |||||||||
| 26106 | TUNGSRAM | — |
200 грн.
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— | 19 | — | — | DIP | — | — | — | 8Вт | 2 pcs. | — | — | — | — | |||||||||||
Transistor KP302BM Au
#13932
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26111 | СНГ | — |
24 грн.
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— | KP302BM silicon planar field transistor with a gate based on pn junction and n-type channel. Designed for use in broadband amplifiers in the frequency range up to 150 MHz, as well as in switching and switching devices. | 0.4 | КТ-1 | Field | DIP | MOS p-channel | 20В | 40мА | 300мВт | 100 pieces. | — | — | 150МГц | — | |||||||||
Transistor KT837K
#13948
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26127 | СНГ | — |
12 грн.
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— | Transistors KT837K silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. The main technical characteristics of the transistor KT837K: • Transistor structure: pnp; • Рк t max - Constant power dissipation of the collector with a heat sink: 30 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 1 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 45 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.15 mA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 50... 150; • Rke us - Saturation resistance between collector and emitter: no more than 0.25 Ohm. | 2 | TO220 | Bipolar | DIP | PNP | — | — | — | 200pcs | 40В | 7,5A | 1МГц | 150 | |||||||||
| 26304 | Silan Semiconductor | — |
76 грн.
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— | 5.7 | TO247 | IGBT | DIP | — | — | — | 321Вт | 30pcs | 600В | 60А | — | — | |||||||||||
Transistor P27A
#14256
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26455 | СНГ | — |
5 грн.
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— | Transistors P27 germanium alloyed pnp amplifying low-frequency with a normalized noise figure at a frequency of 1 kHz. Designed to amplify low frequency signals. Are issued in the glass-to-metal case with flexible conclusions. | 1.8 | КТЮ-3-3 | Bipolar | DIP | PNP | — | — | 30мВт | 100 pieces. | 5В | 6mA | 1МГц | 60 | |||||||||
Transistor KT349B
#14260
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26459 | СНГ | — |
6 грн.
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— | The main technical characteristics of the transistor KT349B: • Transistor structure: pnp; • Рк max - Constant power dissipation of the collector: 200 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 300 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given (final) resistance in the base-emitter circuit: 15 V (10 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V; • Ik max - The maximum allowable DC collector current: 10 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1 μA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 40... 160; • Sk - Collector junction capacitance: no more than 6 pF; • Rke us - Saturation resistance between collector and emitter: no more than 30 ohms. | 0.5 | КТ-1-7 | Bipolar | DIP | PNP | — | — | 200мВт | 100 pieces. | 15В | 40мА | 300МГц | 160 | |||||||||
Transistor KT603G
#14261
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26460 | СНГ | — |
14 грн.
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— | The main technical characteristics of the transistor KT603G: • Transistor structure: npn; • Рк max - Constant power dissipation of the collector: 0.5 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 15 V (1kΩ); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 300 mA; • Ik and max - The maximum allowable collector pulse current: 600 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 5 μA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 60; • Sk - Collector junction capacitance: no more than 15 pF; • Rke us - Saturation resistance between collector and emitter: no more than 7 ohms. | 1.5 | КТЮ-3-3 | Bipolar | DIP | NPN | — | — | 500мВт | 100 pieces. | 15В | 300мА | 200МГц | 60 | |||||||||
Transistor P215
#14266
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26465 | СНГ | — |
15 грн.
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— | Transistors P215 germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. The main technical characteristics of the P215 transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 10 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 80 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.3 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 20... 150; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. | 9.2 | — | Bipolar | DIP | PNP | — | — | 10Вт | 40pcs | 70В | 5А | 0,15МГц | 150 | |||||||||
Transistor KT819B
#14409
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26617 | СНГ | — |
16 грн.
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— | Transistor silicon mesaepitaxial-planar structure npn switching. Designed for use in amplifiers and switching devices. | 2.5 | TO220 | Bipolar | DIP | NPN | — | — | 60Вт | 100 pieces. | 50В | 10А | 3МГц | 20 | |||||||||
Transistor KT605AM
#14412
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26620 | СНГ | — |
4 грн.
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— | Transistor silicon mezaplanar structure npn. Designed for use in amplifiers, pulse and high-frequency switching devices. | 0.7 | TO126 | Bipolar | DIP | NPN | — | — | 400мВт | 200pcs | 250В | 100мА | 40МГц | 40 | |||||||||
Transistor KT855A
#14413
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26621 | СНГ | — |
16 грн.
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— | KT855A transistors are silicon epitaxial-planar structures pnp amplifying. Designed for use in converters, linear voltage stabilizers. | 2.5 | TO220 | Bipolar | DIP | PNP | — | — | 40Вт | 100 pieces. | 200В | 5А | 5МГц | 20 | |||||||||
Transistor KT829A
#14414
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26622 | СНГ | — |
18 грн.
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— | Transistors KT829A silicon mezaplanar structures npn compound amplifying. Designed for use in low-frequency amplifiers, switching devices. | 2.5 | TO220 | Bipolar | DIP | NPN | — | — | 60Вт | 200pcs | 100В | 8А | 4МГц | 750 | |||||||||
Transistor KT865A
#14416
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26625 | СНГ | — |
80 грн.
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— | Transistor KT865A silicon epitaxial-planar structure pnp pulse. Designed for use in secondary power supplies, converters, end stages of audio frequency amplifiers, voltage stabilizers. | 16 | TO3 | Bipolar | DIP | PNP | — | — | 100Вт | 20pcs | 200В | 10А | 15МГц | 200 | |||||||||
Transistor KT854A
#14417
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26626 | СНГ | — |
20 грн.
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— | Transistors KT854A silicon epitaxial-planar structures npn amplifying. Designed for use in converters, linear stabilizers. | 2.5 | TO220 | Bipolar | DIP | NPN | — | — | 60Вт | 100 pieces. | 500В | 10А | — | 20 |
