Transistor KT349B

  • Transistor KT349B
Vendor code: 26459
in stock (1 pc.)
6 грн.
Доступные скидки
Название Скидка Скидка, % Цена
10+ 0.30 грн. 5 5.70 грн.
50+ 0.60 грн. 10 5.40 грн.
100+ 1.20 грн. 20 4.80 грн.

The main technical characteristics of the transistor KT349B:
• Transistor structure: pnp;
• Рк max - Constant power dissipation of the collector: 200 mW;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 300 MHz;
• Uкer max - Maximum collector-emitter voltage at a given collector current and a given (final) resistance in the base-emitter circuit: 15 V (10 kOhm);
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V;
• Ik max - The maximum allowable DC collector current: 10 mA;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1 μA;
• h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 40... 160;
• Sk - Collector junction capacitance: no more than 6 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 30 ohms.

Brand nameСНГ
StructurePNP
Transistor typeBipolar
Power200мВт
Transistor case typeКТ-1-7
Mounting typeDIP
Weight g.0.5
Factory packaging100 pieces.
Collector-emitter voltage15В
Collector current40мА
Current gain160
Frequency300МГц

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