Transistor KT349B
| Manufacturer | СНГ |
| SKU | |
| Categories | Domestic transistors |
Features
| Type | Description | |
|---|---|---|
| Brand name | СНГ | |
| Structure | PNP | |
| Transistor type | Bipolar | |
| Power | 200мВт | |
| Transistor case type | КТ-1-7 | |
| Mounting type | DIP | |
| Weight g. | 0.5 | |
| Factory packaging | 100 pieces. | |
| Collector-emitter voltage | 15В | |
| Collector current | 40мА | |
| Current gain | 160 | |
| Frequency | 300МГц |
Description
The main technical characteristics of the transistor KT349B:
• Transistor structure: pnp;
• Рк max - Constant power dissipation of the collector: 200 mW;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 300 MHz;
• Uкer max - Maximum collector-emitter voltage at a given collector current and a given (final) resistance in the base-emitter circuit: 15 V (10 kOhm);
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V;
• Ik max - The maximum allowable DC collector current: 10 mA;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1 μA;
• h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 40... 160;
• Sk - Collector junction capacitance: no more than 6 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 30 ohms.
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