Transistor 1T806A (=GT806A)

1T806A
Transistors germanium diffusion-alloy structures pnp switching.
Transistors 1T806A, 1T806B, 1T806V are designed for use in pulse devices, converters and current and voltage stabilizers.
The main technical characteristics of the transistor 1T806A:
• Structure: pnp
• Рк t max - Constant power dissipation of the collector with a heat sink: 30 W;
• fh21b - The limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: at least 10 MHz;
• Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 2 V;
• Ik max - Maximum allowable DC collector current: 20 A;
• h21e - Voltage feedback coefficient of the transistor in the small signal mode for circuits with a common emitter and a common base, respectively: 10...100;
• Rke us - Saturation resistance between collector and emitter: no more than 0.04 Ohm.