Transistor 2T808A (=KT808A)

Manufacturer СНГ
SKU 26020
Categories Domestic transistors
Features
Type Description
Brand name СНГ
Structure NPN
Transistor type Bipolar
Power 50Вт
Transistor case type КТЮ-3-20
Mounting type DIP
Weight g. 30
Factory packaging 10 pieces.
Collector-emitter voltage 120В
Collector current 10А
Current gain 50
Description

The main technical characteristics of the transistor 2T808A:
• Transistor structure: npn;
• Рк t max - Constant power dissipation of the collector with a heat sink: 50W;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 7.2 MHz;
• Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 120 (250 imp.) V;
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V;
• Ik max - Maximum allowable DC collector current: 10 A;
• IКеr - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 3 mA (120V);
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 10... 50;
• Sk - Collector junction capacitance: no more than 500 pF.