Transistor KT603G
| Manufacturer | СНГ |
| SKU | |
| Categories | Domestic transistors |
| Type | Description | |
|---|---|---|
| Brand name | СНГ | |
| Structure | NPN | |
| Transistor type | Bipolar | |
| Power | 500мВт | |
| Transistor case type | КТЮ-3-3 | |
| Mounting type | DIP | |
| Weight g. | 1.5 | |
| Factory packaging | 100 pieces. | |
| Collector-emitter voltage | 15В | |
| Collector current | 300мА | |
| Current gain | 60 | |
| Frequency | 200МГц |
The main technical characteristics of the transistor KT603G:
• Transistor structure: npn;
• Рк max - Constant power dissipation of the collector: 0.5 W;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz;
• Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 15 V (1kΩ);
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 3 V;
• Ik max - Maximum allowable DC collector current: 300 mA;
• Ik and max - The maximum allowable collector pulse current: 600 mA;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 5 μA;
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 60;
• Sk - Collector junction capacitance: no more than 15 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 7 ohms.
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|---|---|---|---|---|---|---|
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Chip K561LA7
10 грн.
|
|
Chip NE555P (=NE555, NE555N, KR1006VI1)
6 грн.
|
|
Transistor KT3107Zh
3 грн.
|
|
Transistor KT660A
6 грн.
|
|
Transistor MP14B
7 грн.
|
|
Transistor MP14A
7 грн.
|
|
Chip K155LA3
8 грн.
|
|
Transistor KT315G
2 грн.
|
|
Chip K176IE4
12 грн.
|
|
Diode D310
2 грн.
|
|
Transistor KT603B Au
60 грн.
|
|
Diode 1D507A (=GD507A)
3 грн.
|