Transistor KT603G

  • Transistor KT603G
Vendor code: 26460
not in stock
14 грн.
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10+ 0.70 грн. 5 13.30 грн.
50+ 1.40 грн. 10 12.60 грн.
100+ 2.80 грн. 20 11.20 грн.

The main technical characteristics of the transistor KT603G:
• Transistor structure: npn;
• Рк max - Constant power dissipation of the collector: 0.5 W;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz;
• Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 15 V (1kΩ);
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 3 V;
• Ik max - Maximum allowable DC collector current: 300 mA;
• Ik and max - The maximum allowable collector pulse current: 600 mA;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 5 μA;
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 60;
• Sk - Collector junction capacitance: no more than 15 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 7 ohms.

Brand nameСНГ
StructureNPN
Transistor typeBipolar
Power500мВт
Transistor case typeКТЮ-3-3
Mounting typeDIP
Weight g.1.5
Factory packaging100 pieces.
Collector-emitter voltage15В
Collector current300мА
Current gain60
Frequency200МГц

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