transistors

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
Transistor FGH60N60SMD
Transistor FGH60N60SMD
#12589
 24174 FAIRCHILD SEMICONDUCTOR —
95 грн.
10+90,25 грн.
50+85,50 грн.
100+76 грн.
 — 7 TO247 IGBT DIP — — — 600Вт 30pcs 600В 60А — —
Transistor IKW30N60H3 (=K30H603)
Transistor IKW30N60H3 (=K30H603)
#12590
 24172 INFINEON TECHNOLOGIES —
58 грн.
10+55,10 грн.
50+52,20 грн.
100+46,40 грн.
 — 7 TO247 IGBT DIP — — — 187Вт 30pcs 600В 30А — —
Transistor IKW40N60H3 (=K40H603)
Transistor IKW40N60H3 (=K40H603)
#12591
 24171 INFINEON TECHNOLOGIES —
64 грн.
10+60,80 грн.
50+57,60 грн.
100+51,20 грн.
 — 7 TO247 IGBT DIP — — — 306Вт 30pcs 600В 40А — —
Transistor IKW50N60H3 (=K50H603)
Transistor IKW50N60H3 (=K50H603)
#12592
 24170 INFINEON TECHNOLOGIES —
85 грн.
10+80,75 грн.
50+76,50 грн.
100+68 грн.
 — 7 TO247 IGBT DIP — — — 333Вт 30pcs 600В 50А — —
Transistor FGL60N100BNTD (=G60N100BNTD)
Transistor FGL60N100BNTD (=G60N100BNTD)
#12593
 24161 ON SEMICONDUCTOR —
235 грн.
10+223,25 грн.
50+211,50 грн.
100+188 грн.
 — 8 TO264 IGBT DIP — — — 180Вт 25pcs 1кВ 60А — —
Transistor SGT40N60NPFDPN (=40N60NPFD)
Transistor SGT40N60NPFDPN (=40N60NPFD)
#12594
 24160 Silan Semiconductor —
63 грн.
10+59,85 грн.
50+56,70 грн.
100+50,40 грн.
 — 5.7 TO3P IGBT DIP — — — 290Вт 30pcs 600В 40А — —
Transistor GT50JR22 (=50JR22)
Transistor GT50JR22 (=50JR22)
#12595
 24159 TOSHIBA —
65 грн.
10+61,75 грн.
50+58,50 грн.
100+52 грн.
 — 5.7 TO3P IGBT DIP — — — 230Вт 25pcs 600В 50А — —
Transistor SGT60N60FD1PN (=60N60FD1)
Transistor SGT60N60FD1PN (=60N60FD1)
#12596
 24158 Silan Semiconductor —
76 грн.
10+72,20 грн.
50+68,40 грн.
100+60,80 грн.
 — 5.7 TO3P IGBT DIP — — — 321Вт 30pcs 600В 60А — —
Transistor FMH23N50E (=23N50E)
Transistor FMH23N50E (=23N50E)
#12597
 24157 FUJI —
39 грн.
10+37,05 грн.
50+35,10 грн.
100+31,20 грн.
 — 5.7 TO3P Field DIP MOS n-channel 500В 23А 315Вт 25pcs — — — —
Transistor 2SK2370 (=K2370)
Transistor 2SK2370 (=K2370)
#12598
 24156 NEC —
46 грн.
10+43,70 грн.
50+41,40 грн.
100+36,80 грн.
 — 5.7 TO3P Field DIP MOS n-channel 500В 20А 140Вт 30pcs — — — —
Transistor SVF3878PN (=3878)
Transistor SVF3878PN (=3878)
#12599
 24153 Silan Semiconductor —
45 грн.
10+42,75 грн.
50+40,50 грн.
100+36 грн.
 — 5.7 TO3P Field DIP MOS n-channel 900В 9А 150Вт 30pcs — — — —
Transistor BSP17
Transistor BSP17
#12627
 24949 PHILIPS —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — 0.3 SOT223 Field SMD MOS n-channel 50В 3.2А 1.8Вт 1000pcs — — — —
Transistor 2T312V (=KT312V)
Transistor 2T312V (=KT312V)
#12642
 24998 СНГ —
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
 — Transistors 2T312V silicon epitaxial-planar structures npn universal. Designed for use in switching devices, amplifiers and generators. 0.6 КТЮ-3-1 Bipolar DIP NPN — — 225мВт 200pcs 30В 30мА 120МГц 250
Transistor 2T312A (=KT312A)
Transistor 2T312A (=KT312A)
#12643
 24999 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — Transistors 2T312A silicon epitaxial-planar structures npn universal. Designed for use in switching devices, amplifiers and generators. 0.6 КТЮ-3-1 Bipolar DIP NPN — — 225мВт 200pcs 30В 30мА 80МГц 100
Transistor 2T312B (=KT312B)
Transistor 2T312B (=KT312B)
#12644
 25000 СНГ —
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
 — Transistors 2T312B silicon epitaxial-planar structures npn universal. Designed for use in switching devices, amplifiers and generators. 0.6 КТЮ-3-1 Bipolar DIP NPN — — 225мВт 200pcs 30В 30мА 120МГц 100
Transistor 2T608A (=KT608A) Au
Transistor 2T608A (=KT608A) Au
#12645
 25001 СНГ —
52 грн.
10+49,40 грн.
50+46,80 грн.
100+41,60 грн.
 — Transistors 2T608A silicon epitaxial-planar structures npn switching. Designed for use in high-speed pulsed and high-frequency devices. 1.5 КТЮ-3-6 Bipolar DIP NPN — — 500мВт 100 pieces. 60В 400мА 200МГц 80
Transistor 2T313A (=KT313A)
Transistor 2T313A (=KT313A)
#12646
 25002 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — Transistors 2T313A silicon, epitaxial-planar structures pnp universal. Designed for use in high frequency amplifiers and switching devices. 0.4 КТ-1-7 Bipolar DIP PNP — — 300мВт 100 pieces. 50В 350мА 200МГц 120
Transistor 1T311B (=GT311B)
Transistor 1T311B (=GT311B)
#12648
 25003 СНГ —
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
 — Bipolar germanium transistor GT311B, npn, low power, ultrahigh frequency. 1.2 — Bipolar DIP NPN — — 150мВт 100 pieces. 12В 50мА 300МГц 30
Phototransistor FT-1K gr.1
Phototransistor FT-1K gr.1
#12650
 25005 СНГ —
11 грн.
10+10,45 грн.
50+9,90 грн.
100+8,80 грн.
 — The main technical parameters of the phototransistor FT-1K gr.1: • Photosensitive element size: diameter 1.8 mm; • Area of spectral photosensitivity: 0.5...1.12 microns; • Wavelength of maximum spectral distribution of photosensitivity: 0.8...0.9 µm; • Rated operating voltage: 5 V; • Dark current: no more than 3 mkA; • Current photosensitivity: not less than 0.4 µA/lx. 0.3 — Photo DIP — — — — 100 pieces. — — — —
P605A transistor with flexible leads
P605A transistor with flexible leads
#12773
 25130 СНГ —
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
 — Transistor germanium structure pnp universal. Designed for use in amplifying, generator and pulse stages of low and high frequencies up to 30 MHz. 10 — Bipolar DIP PNP — — 3Вт 40pcs 40В 1.5А 30МГц 120
Transistor GT701A
Transistor GT701A
#12774
 25131 СНГ —
40 грн.
10+38 грн.
50+36 грн.
100+32 грн.
 — Transistor GT701A germanium alloy structure pnp universal. Designed for use in ignition systems of internal combustion engines, as well as in voltage converters. 22 — Bipolar DIP PNP — — 50Вт 20pcs 100В 12А — 75
Transistor 2T908A (=KT908A)
Transistor 2T908A (=KT908A)
#12953
 25224 СНГ —
120 грн.
10+114 грн.
50+108 грн.
100+96 грн.
 — Transistors 2T908A silicon mezaplanar structures npn switching. Designed for use in stabilizers and voltage converters, pulse modulators. The body is metal with glass insulators and hard leads. 22 КТЮ-3-20 Bipolar DIP NPN — — 50Вт 10 pieces. 100В 10А 50МГц 60
Transistor 1T305B (=GT305B)
Transistor 1T305B (=GT305B)
#12954
 25225 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
 — Transistors 1T305B germanium diffusion-alloy structures pnp universal. 0.4 — Bipolar DIP PNP — — 75мВт 100 pieces. 15В 6mA 20МГц 180
Transistor 2T306A (=KT306A)
Transistor 2T306A (=KT306A)
#12958
 25229 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
 — Transistors 2T306A silicon epitaxial-planar structures npn switching and amplifying with non-normalized noise figure. 0.6 КТЮ-3-1 Bipolar DIP NPN — — 150мВт 100 pieces. 10В 30мА 300МГц 60
Transistor 2T306B (=KT306B)
Transistor 2T306B (=KT306B)
#12959
 25230 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — Transistors 2T306B silicon epitaxial-planar structures npn switching and amplifying with non-normalized noise figure. 0.6 КТЮ-3-1 Bipolar DIP NPN — — 150мВт 100 pieces. 10В 30мА 500МГц 120
Transistor 2T306V (=KT306V)
Transistor 2T306V (=KT306V)
#12960
 25231 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — Transistors 2T306V silicon epitaxial-planar structures npn switching and amplifying with non-normalized noise figure. 0.6 КТЮ-3-1 Bipolar DIP NPN — — 150мВт 100 pieces. 10В 30мА 300МГц 100
Transistor 2T306G (=KT306G)
Transistor 2T306G (=KT306G)
#12961
 25232 СНГ —
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
 — Transistors 2T306G silicon epitaxial-planar structures npn switching and amplifying with non-normalized noise figure. 0.6 КТЮ-3-1 Bipolar DIP NPN — — 150мВт 100 pieces. 10В 30мА 500МГц 200
Transistor MJE13005-2 (=E13005-2)
Transistor MJE13005-2 (=E13005-2)
#12967
 25239 FAIRCHILD SEMICONDUCTOR —
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
500+4,90 грн.
 — 2.5 TO220 Bipolar DIP NPN — — 75Вт 50pcs 400В 4А — —
Transistor KSE13009L (=E13009L)
Transistor KSE13009L (=E13009L)
#13341
 25464 FAIRCHILD SEMICONDUCTOR —
24 грн.
10+22,80 грн.
50+21,60 грн.
100+19,20 грн.
500+16,80 грн.
 — 7 TO3 Bipolar DIP NPN — — 130Вт 30pcs 400В 12А 4МГц 30
Transistor KT603B
Transistor KT603B
#13540
 25671 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — The main technical characteristics of the transistor KT603B: • Transistor structure: npn; • Рк max - Constant power dissipation of the collector: 0.5 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 30 V (1 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 300 mA; • Ik and max - The maximum allowable collector pulse current: 600 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 10 µA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 60; • Sk - Collector junction capacitance: no more than 15 pF; • Rke us - Saturation resistance between collector and emitter: no more than 7 ohms. 1.5 КТЮ-3-3 Bipolar DIP NPN — — 500мВт 100 pieces. 30В 300мА 200МГц 60