transistors
Filter layout:
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| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Transistor case type | Transistor type | Mounting type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain |
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Transistor 2T607A-4
#11960
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24249 | СНГ | — |
160 грн.
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— | Transistors 2T607A-4 silicon epitaxial-planar structures npn generator. Designed for use in generators and amplifiers in sealed equipment. | 0.4 | — | Bipolar | SMD | NPN | — | — | 1.5Вт | 8pcs | 35В | 150мА | 0,7МГц | — | |||||||||
Transistor 2P903V (=KP903V)
#11966
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24255 | СНГ | — |
35 грн.
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— | Transistors 2P903V are silicon epitaxial-planar field-effect transistors with an n-type channel and a gate in the form of a reverse-biased pn junction, high-frequency universal. | 4.5 | КТ-4-2 | Field | Screw | MOS n-channel | 20В | 700мА | 6Вт | 20pcs | — | — | — | — | |||||||||
Transistor KP327A (=BF961)
#12172
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24464 | СНГ | — |
12 грн.
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— | KP327A silicon planar transistor with two insulated gates protected by diodes and an n-type channel | 0.3 | КТ-29 | Field | SMD | MOS n-channel | 14В | 30мА | 200мВт | 100 pieces. | — | — | — | — | |||||||||
Transistor FIR150N06P
#12214
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24591 | First | — |
22 грн.
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— | 2.5 | TO220 | Field | DIP | MOS n-channel | 60В | 150А | 220Вт | 50pcs | — | — | — | — | ||||||||||
Transistor 2T809A (=KT809A)
#12230
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24609 | СНГ | — |
60 грн.
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— | The main technical characteristics of the transistor 2T809A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 40 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 5.1 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 400 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V; • Ik max - Maximum allowable DC collector current: 3 A; • Ik and max - The maximum allowable collector pulse current: 5 A; • Iкеr - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 3 mA (400 V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 15... 100; • Sk - Collector junction capacitance: no more than 270 pF; • Rke us - Saturation resistance between collector and emitter: no more than 0.75 Ohm. | 22 | КТЮ-3-3 | Bipolar | DIP | NPN | — | — | 40Вт | 20pcs | 400В | 5А | — | 100 | |||||||||
Transistor P210A
#12231
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24610 | СНГ | — |
60 грн.
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— | The main technical characteristics of the P210A transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 60 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukeo samples - Breakdown voltage collector-emitter at a given collector current and base open circuit: 65 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 25 V; • Ik max - Maximum allowable DC collector current: 12 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 8 mA; • h21E - Static current transfer coefficient for a common emitter circuit in large signal mode: more than 15. | 34 | — | Bipolar | DIP | PNP | — | — | 60Вт | 10 pieces. | 65В | 12А | — | 15 | |||||||||
Transistor KT816V
#12237
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24616 | СНГ | — |
12 грн.
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— | Transistor KT816V silicon mesaepitaxial-planar structure pnp amplifying. | 0.7 | TO126 | Bipolar | DIP | PNP | — | — | 25Вт | 200pcs | 60В | 3А | 3МГц | 25 | |||||||||
Transistor KT812V
#12261
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24643 | СНГ | — |
50 грн.
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— | The main technical characteristics of the transistor KT812V: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 50 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 3 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 200 V (0.1 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 7 V; • Ik max - Maximum allowable DC collector current: 8 A; • Ik and max - The maximum allowable collector pulse current: 12 A; • Iкer - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 5 mA (700V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 10; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. | 16 | kt-9 | Bipolar | DIP | NPN | — | — | 50Вт | 20pcs | 200В | 8А | 3МГц | 10 | |||||||||
Transistor KT940B
#12264
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24646 | СНГ | — |
6 грн.
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— | Silicon epitaxial-planar bipolar structure npn amplifying. | 0.7 | TO126 | Bipolar | DIP | NPN | — | — | 10Вт | 200pcs | 250В | 100мА | 90МГц | 25 | |||||||||
Transistor KT817A
#12265
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24647 | СНГ | — |
10 грн.
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— | Transistor KT817A silicon mesa-epitaxial-planar structure npn amplifying. | 0.7 | TO126 | Bipolar | DIP | NPN | — | — | 25Вт | 200pcs | 40В | 3А | 3МГц | 40 | |||||||||
Transistor KT817V
#12266
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24648 | СНГ | — |
12 грн.
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— | Transistor KT817V silicon mesa-epitaxial-planar structure npn amplifying. | 0.7 | TO126 | Bipolar | DIP | NPN | — | — | 25Вт | 200pcs | 60В | 3А | 3МГц | 40 | |||||||||
Transistor KP303E Au
#12267
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24649 | СНГ | — |
20 грн.
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— | KP303E silicon epitaxial-planar field-effect transistors with a gate based on a pn junction and an n-type channel. | 0.4 | КТ-1 | Field | DIP | MOS n-channel | 25В | 20мА | 200мВт | 100 pieces. | — | — | — | — | |||||||||
Transistor KT3102A
#12269
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24651 | СНГ | — |
25 грн.
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— | The main technical characteristics of the transistor KT3102A: • Transistor structure: npn • Рк max - Constant power dissipation of the collector: 250 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 300 MHz; • Vkbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 50 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 100 mA; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 0.05 μA (50V); • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter: 100...250; • Sk - Collector junction capacitance: no more than 6 pF; • Ksh - Transistor noise figure: no more than 10 dB at a frequency of 1 kHz • tk - Time constant of the feedback circuit at high frequency: no more than 100 ps. | 0.34 | КТ-1 | — | DIP | NPN | — | — | 250мВт | 100 pieces. | 50В | 200мА | 300МГц | 250 | |||||||||
Transistor P27
#12270
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24652 | СНГ | — |
5 грн.
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— | Transistors P27 germanium alloyed pnp amplifying low-frequency with a normalized noise figure at a frequency of 1 kHz. Designed to amplify low frequency signals. Are issued in the glass-to-metal case with flexible conclusions. | 1.8 | КТЮ-3-3 | Bipolar | DIP | PNP | — | — | 30мВт | 100 pieces. | 5В | 6mA | 1МГц | 100 | |||||||||
Transistor P28
#12271
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24653 | СНГ | — |
6 грн.
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— | Transistors P28 - germanium, amplifying, low power low-frequency, with a normalized noise figure at a frequency of 1KHz, structures - pnp. | 1.8 | КТЮ-3-3 | Bipolar | DIP | PNP | — | — | 30мВт | 100 pieces. | 5В | 6mA | 5МГц | 200 | |||||||||
Transistor MP37
#12272
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24654 | СНГ | — |
6 грн.
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— | Transistors MP37 germanium alloyed npn amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. Are issued in the glass-to-metal case with flexible conclusions. | 1.8 | КТЮ-3-3 | Bipolar | DIP | NPN | — | — | 150мВт | 100 pieces. | 15В | 20мА | 1МГц | 30 | |||||||||
Transistor KT601A Au
#12273
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24655 | СНГ | — |
45 грн.
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— | The main technical characteristics of the transistor KT601A: • Transistor structure: npn; • Рк max - Constant power dissipation of the collector: 0.25 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 40 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given (final) resistance in the base-emitter circuit: 100 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 2 V; • Ik max - Maximum allowable DC collector current: 30 mA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 16; • Sk - Collector junction capacitance: no more than 15 pF; • tk - Time constant of the feedback circuit at high frequency: no more than 600 ps. | 2 | КТЮ-3-6 | Bipolar | DIP | NPN | — | — | 500мВт | 100 pieces. | 100В | 30мА | 40МГц | 25 | |||||||||
Transistor KT603B Au
#12274
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24656 | СНГ | — |
60 грн.
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— | The main technical characteristics of the transistor KT603B: • Transistor structure: npn; • Рк max - Constant power dissipation of the collector: 0.5 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 30 V (1 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 300 mA; • Ik and max - The maximum allowable collector pulse current: 600 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 10 µA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 60; • Sk - Collector junction capacitance: no more than 15 pF; • Rke us - Saturation resistance between collector and emitter: no more than 7 ohms. | 1.5 | КТЮ-3-6 | Bipolar | DIP | NPN | — | — | 500мВт | 100 pieces. | 30В | 300мА | 200МГц | 60 | |||||||||
| 24658 | СНГ | — |
80 грн.
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— | The main technical characteristics of the transistor KT808A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 50W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 7.2 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 120 (250 imp.) V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V; • Ik max - Maximum allowable DC collector current: 10 A; • IКеr - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 3 mA (120V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 10... 50; • Sk - Collector junction capacitance: no more than 500 pF. | 30 | КТЮ-3-20 | Bipolar | DIP | NPN | — | — | 50Вт | 10 pieces. | 120В | 10А | — | 50 | ||||||||||
Transistor P422
#12280
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24662 | СНГ | — |
8 грн.
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— | Germanium transistors, diffusion-alloyed, pnp, amplifying, low-power with a normalized noise figure at a frequency of 1.6 MHz. Are intended for work in amplifying and generator cascades HF cascades. | 1.5 | КТЮ-3-3 | Bipolar | DIP | PNP | — | — | 100мВт | 100 pieces. | 10В | 20мА | 50МГц | 100 | |||||||||
Transistor KT837F
#12332
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24682 | INTEGRAL | — |
12 грн.
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— | Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. | 2.5 | TO220 | Bipolar | DIP | PNP | — | — | 30Вт | 100 pieces. | 40В | 7,5A | 1МГц | 150 | |||||||||
Transistor GT328V Au
#12334
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24684 | СНГ | — |
30 грн.
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— | The main technical characteristics of the GT328V transistor: • Structure: pnp • Рк max - Constant power dissipation of the collector: 50 mW; • Fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 300 MHz; • Uкеr samples - Breakdown voltage collector-emitter at a given collector current and a given (final) resistance in the base-emitter circuit: 15 V at 5 kOhm; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 0.25 V; • Ik max - The maximum allowable DC collector current: 10 mA; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 10 μA at 15 V; • h21Э - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 10...50 at 5V, 3mA; • Sk - Collector junction capacitance: no more than 1.5 pF at 5V; • Ksh - Transistor noise factor: no more than 7 dB at a frequency of 180 MHz; • tk - Time constant of the feedback circuit at high frequency: no more than 10 ps. | 0.5 | КТ-1 | Bipolar | DIP | PNP | — | — | 50мВт | 100 pieces. | 15В | 10мА | 300МГц | 50 | |||||||||
Transistor KT603D Au
#12336
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24686 | СНГ | — |
60 грн.
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— | Transistors KT603D silicon epitaxial-planar structures npn. Designed for use in pulse and switching high-frequency devices. | 1.5 | КТЮ-3-6 | Bipolar | DIP | NPN | — | — | 500мВт | 100 pieces. | 10В | 300мА | 200МГц | 80 | |||||||||
Transistor KT3102VM
#12368
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24703 | СНГ | — |
3 грн.
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— | 0.3 | TO92 | Bipolar | DIP | NPN | — | — | 250мВт | 1000pcs | 30В | 200мА | — | 500 | ||||||||||
Transistor KT3102BM
#12369
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24704 | СНГ | — |
3 грн.
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— | 0.3 | TO92 | Bipolar | DIP | NPN | — | — | 250мВт | 1000pcs | 50В | 200мА | — | 500 | ||||||||||
Transistor KT209L
#12370
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24706 | СНГ | — |
3 грн.
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— | 0.3 | TO92 | Bipolar | DIP | PNP | — | — | 350мВт | 1000pcs | 60В | 350мА | — | 60 | ||||||||||
Transistor SD1274-1
#12408
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24743 | ASI | — |
520 грн.
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— | 10 | SOT120 | Bipolar | DIP | NPN | — | — | 70Вт | 10 pieces. | 16В | 8А | 160МГц | 20 | ||||||||||
| 24922 | MAGNACHIP SEMICONDUCTOR | — |
78 грн.
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— | 6.5 | TO247 | IGBT | DIP | — | — | — | 375Вт | 30pcs | 650В | 40А | — | — | |||||||||||
Transistor FGH40N60SMD
#12587
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24924 | FAIRCHILD SEMICONDUCTOR | — |
70 грн.
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— | 6.5 | TO247 | IGBT | DIP | — | — | — | 349Вт | 30pcs | 600В | 40А | — | — | ||||||||||
Transistor FGH60N60SFD
#12588
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24175 | FAIRCHILD SEMICONDUCTOR | — |
92 грн.
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— | 7 | TO247 | IGBT | DIP | — | — | — | 378Вт | 30pcs | 600В | 60А | — | — |
