Transistor GT328V Au

  • Transistor GT328V Au
Vendor code: 24684
in stock (38 pc.)
20 грн.
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10+ 1 грн. 5 19 грн.
50+ 2 грн. 10 18 грн.
100+ 4 грн. 20 16 грн.

The main technical characteristics of the GT328V transistor:
• Structure: pnp
• Рк max - Constant power dissipation of the collector: 50 mW;
• Fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 300 MHz;
• Uкеr samples - Breakdown voltage collector-emitter at a given collector current and a given (final) resistance in the base-emitter circuit: 15 V at 5 kOhm;
• Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 0.25 V;
• Ik max - The maximum allowable DC collector current: 10 mA;
• Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 10 μA at 15 V;
• h21Э - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 10...50 at 5V, 3mA;
• Sk - Collector junction capacitance: no more than 1.5 pF at 5V;
• Ksh - Transistor noise factor: no more than 7 dB at a frequency of 180 MHz;
• tk - Time constant of the feedback circuit at high frequency: no more than 10 ps.

Brand nameСНГ
StructurePNP
Transistor typeБиполярный
Power50мВт
Transistor case typeКТ-1
Mounting typeDIP
Weight g.0.5
Factory packaging100шт.
Collector-emitter voltage15В
Collector current10мА
Current gain50
Frequency300МГц

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