Transistor GT328V Au
Название | Скидка | Скидка, % | Цена |
---|---|---|---|
10+ | 1.50 грн. | 5 | 28.50 грн. |
50+ | 3 грн. | 10 | 27 грн. |
100+ | 6 грн. | 20 | 24 грн. |
The main technical characteristics of the GT328V transistor:
• Structure: pnp
• Рк max - Constant power dissipation of the collector: 50 mW;
• Fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 300 MHz;
• Uкеr samples - Breakdown voltage collector-emitter at a given collector current and a given (final) resistance in the base-emitter circuit: 15 V at 5 kOhm;
• Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 0.25 V;
• Ik max - The maximum allowable DC collector current: 10 mA;
• Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 10 μA at 15 V;
• h21Э - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 10...50 at 5V, 3mA;
• Sk - Collector junction capacitance: no more than 1.5 pF at 5V;
• Ksh - Transistor noise factor: no more than 7 dB at a frequency of 180 MHz;
• tk - Time constant of the feedback circuit at high frequency: no more than 10 ps.
Brand name | СНГ |
Structure | PNP |
Transistor type | Bipolar |
Power | 50мВт |
Transistor case type | КТ-1 |
Mounting type | DIP |
Weight g. | 0.5 |
Factory packaging | 100 pieces. |
Collector-emitter voltage | 15В |
Collector current | 10мА |
Current gain | 50 |
Frequency | 300МГц |
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