Diodes, bridges

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Mounting type Type of shell Urev. max, V Ipr. max. Ipr. imp. max. Diode type Factory packaging Diode design
Diode RHRP860 (8A, 600V, 35 ns)
Diode RHRP860 (8A, 600V, 35 ns)
#16775
 29021 ON SEMICONDUCTOR 150947 шт
20 грн.
100+18 грн.
200+16 грн.
500+14 грн.
2 DIP TO-220-2 600V 8A — Fast 50pcs double common cathode
Diode KD202V
Diode KD202V
#9737
 21147 СНГ 41689 шт
7 грн.
50+6,30 грн.
200+5,60 грн.
500+4,90 грн.
Diodes KD202V silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. Are issued in the glass-to-metal case with rigid conclusions. The type of the diode and the connection diagram of the electrodes with the leads are given on the case. The main technical characteristics of the KD202V diode: • uobp and max - Maximum impulse reverse voltage: 100 V; • inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • unp - DC forward voltage: no more than 0.9 V at inp 5 A; • iobr - Constant reverse current: no more than 800 µA at uobp 100 V 5.2 Screw КД-11 100V 5A — Rectifier 100 pieces. single
Diode 1N4007 (MIC)
Diode 1N4007 (MIC)
#17254
 29510 SEMTECH ELECTRONICS 24973 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
1000V*1A(L=42mm) 0.25 DIP DO-41 1000V 1A — Rectifier 1000pcs single
KDS111A, Diode assembly
KDS111A, Diode assembly
#9760
 21279 СНГ 13464 шт
1.80 грн.
50+1,62 грн.
200+1,44 грн.
500+1,26 грн.
Diode assembly, each consisting of two diodes connected with a common cathode. 0.3 DIP — 300V 200mA — Rectifier 250pcs double common cathode
Diode KD209A
Diode KD209A
#15525
 27764 СНГ 7318 шт
1 грн.
50+0,90 грн.
200+0,80 грн.
500+0,70 грн.
The main technical characteristics of the KD209A diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 700 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 700 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 400 V. 0.4 DIP — 400V 700mA — Rectifier 500pcs single
Diode KD105B (type 2)
Diode KD105B (type 2)
#9889
 21674 СНГ 6804 шт
1 грн.
50+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Silicon diodes, diffusion. Are issued in the plastic case with flexible conclusions. 0.3 DIP — 400V 300mA — Rectifier 2000pcs single
Diode 2D202R (=KD202R)
Diode 2D202R (=KD202R)
#10770
 22840 СНГ 6249 шт
10 грн.
50+9 грн.
200+8 грн.
500+7 грн.
Diodes 2D202R silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. Are issued in the glass-to-metal case with rigid conclusions. The type of the diode and the connection diagram of the electrodes with the leads are given on the case. Diode weight no more than 5.2 g, with accessories no more than 7 g. Hull type: KDYu-11-2. Specifications: UZh3.362.035 TU. The main technical characteristics of the diode 2D202R: • Uobr and max - Maximum impulse reverse voltage: 600 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 600 V 5.2 Screw КД-11 600V 5A — Rectifier 100 pieces. single
Diode 1N4148 (=cd522)(0.2A/75V 4ns)
Diode 1N4148 (=cd522)(0.2A/75V 4ns)
#1002
 20140 ST MICROELECTRONICS 5785 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
75V*0.2A 0.11 DIP DO-35 75V 200mA — Pulse 1000pcs single
Microwave diode 3A121A
Microwave diode 3A121A
#9804
 21385 СНГ 4865 шт
46 грн.
50+41,40 грн.
200+36,80 грн.
500+32,20 грн.
The main technical parameters of the microwave diode 3A121A: • Operating frequency: no more than 40 GHz; • Conversion loss: no more than 9 dB; • Rectified current: 0.3...1.4 mA; • Rated noise figure: no more than 9 dB; • Voltage standing wave ratio: no more than 3; • Output impedance: 200...600 Ohm; • DC forward voltage: 0.55...1.2 V; • Pulsed incident power: 100 mW; • Ambient temperature: -60...+85°С; • Minimum operating time: 50,000 hours; 0.0015 SMD КД-124 — — — Microwave 80pcs single
Diode 2D202V (=KD202V)
Diode 2D202V (=KD202V)
#12224
 24603 СНГ 4494 шт
9 грн.
50+8,10 грн.
200+7,20 грн.
500+6,30 грн.
The main technical characteristics of the diode 2D202V: • Uobr and max - Maximum impulse reverse voltage: 100 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 100 V. 5 Screw КДЮ-11 100V 5A — Rectifier 100 pieces. single
Diode assembly KDS523VR
Diode assembly KDS523VR
#15848
 28081 СНГ 4122 шт
4 грн.
50+3,60 грн.
200+3,20 грн.
500+2,80 грн.
Diode assembly consisting of four silicon, planar epitaxial switching diodes, with separate leads. 1.1 DIP — 50V 20mA — Pulse 50pcs assembly
Diode assembly KDS523BM
Diode assembly KDS523BM
#9820
 21411 СНГ 3607 шт
2 грн.
50+1,80 грн.
200+1,60 грн.
500+1,40 грн.
Diode assembly, each consisting of two silicon planar epitaxial switching diodes with separate terminals. Are issued in the plastic case with flexible conclusions. 0.25 SMD — 50V 20mA 200mA Pulse 100 pieces. assembly
Microwave diode 2A523A-4
Microwave diode 2A523A-4
#13748
 25916 СНГ 3402 шт
142 грн.
50+127,80 грн.
200+113,60 грн.
500+99,40 грн.
The working element of the diode is a pin-type semiconductor structure. Designed for use in switching devices of the decimeter and centimeter wavelength ranges as part of hybrid integrated circuits that provide sealing and protection of devices from moisture, salt fog, mold fungi, hoarfrost and dew, low and high pressure. They are produced in a frameless design with hard leads on a crystal holder with a protective coating. Marked: 2A523A-4 - one black dot at the positive electrode. The main technical parameters of the microwave diode 2A523A-4: • Critical diode switching frequency: not less than 200 GHz; • Continuous power dissipation: 20W; • Direct forward current: no more than 300 mA; • Constant reverse current: no more than 4mA; • Forward voltage across the diode: no more than 1.2 V; • Constant reverse voltage: no more than 200 V; • Accumulated diode charge: no more than 220 nC; • Direct loss resistance: no more than 0.5 Ohm; • Total diode capacitance: no more than 1.5 pF; • Ambient temperature: -60...+125 °С; • Minimum operating time: 25000 hours. 0.12 SMD — — — — Microwave 100 pieces. single
Diode BAT46
Diode BAT46
#9815
 21398 ST MICROELECTRONICS 3128 шт
1.50 грн.
100+1,35 грн.
200+1,20 грн.
500+1,05 грн.
0.3 DIP DO-35 100V 150mA 750mA Schottky 4000pcs single
Diode bridge KTS405B
Diode bridge KTS405B
#14125
 26306 СНГ 2992 шт
7 грн.
The main technical characteristics of the KTs405B diode: • Uopp max - Maximum direct reverse voltage: 500 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 500 V. 5.2 DIP — 500V 1A — Diode bridge 500pcs —
Diode D220
Diode D220
#8890
 26713 СНГ 2991 шт
2 грн.
50+1,80 грн.
200+1,60 грн.
500+1,40 грн.
Silicon diode, alloyed, pulsed. The main technical characteristics of the diode D220: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 50 mA; • Inp and max - Maximum pulse forward current: 0.5 A; • Sd - Total capacitance: 15 pF at Uobr 5 V; • Unp - DC forward voltage: no more than 1.5 V at Inp 50 mA; • Iobr - Constant reverse current: no more than 1 μA at Uobr 50 V. 0.3 DIP D104 50V 50mA — Rectifier 100 pieces. single
Diode 1N4006
Diode 1N4006
#16670
 28909 VISHAY 2840 шт
2 грн.
100+1,80 грн.
200+1,60 грн.
500+1,40 грн.
1000V*1A 0.34 DIP DO-41 800V 1A — Rectifier 3000pcs single
Diode KD209A orange.
Diode KD209A orange.
#14035
 26214 СНГ 2805 шт
1 грн.
50+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Diodes KD209A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1 kHz. 0.3 DIP КД-5А 400V 700mA — Rectifier 500pcs single
Diode BAT54 (L4)
Diode BAT54 (L4)
#12749
 25103 NXP 2712 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
0.1 SMD SOT-23 30V 200mA — Schottky 3000pcs single
Diode D223
Diode D223
#3409
 22785 СНГ 2641 шт
2 грн.
50+1,80 грн.
200+1,60 грн.
500+1,40 грн.
Max. permissible reverse voltage, V: 50 Maximum direct forward current, mA: 50 0.3 DIP D104 50V 50mA — Rectifier 100 pieces. single
Diode BAV70 (A4t) (KD704AS9) (Si 70V 0.2A)
Diode BAV70 (A4t) (KD704AS9) (Si 70V 0.2A)
#4263
 20141 NXP 2297 шт
0.60 грн.
100+0,54 грн.
200+0,48 грн.
500+0,42 грн.
70V 0.2A 0.1 SMD SOT-23 70V 215mA — Pulse 3000pcs double common cathode
Diode BAT54C (WW1)
Diode BAT54C (WW1)
#12750
 25104 NXP 2116 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
0.1 SMD SOT-23 30V 200mA — Schottky 3000pcs double common cathode
Diode BAV99 (A7) (Si 75V 0.215A 4ns)
Diode BAV99 (A7) (Si 75V 0.215A 4ns)
#1016
 20142 NXP 2069 шт
0.80 грн.
100+0,72 грн.
200+0,64 грн.
500+0,56 грн.
2 Diodes 70V 215mA 0.1 SMD SOT-23 75V 215mA — Pulse 3000pcs 2 diodes in series
Diode KD521V
Diode KD521V
#3473
 23549 СНГ 2069 шт
1 грн.
50+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Type of diode pulse Maximum constant reverse voltage, V 50 Maximum direct (rectified for a half-cycle) current, A 0.05 Hole mounting method Maximum recovery time, µs 0.004 Maximum reverse current, µA 1 Maximum forward voltage, V 1 at Ipr., A 0.05 Total capacity, Sd.pF 4 Operating temperature, С -60...125 Housing kd 3 0.2 DIP КД-2 50V 50mA 500mA Pulse 500pcs single
Diode MURS360T3G (=U3J)
Diode MURS360T3G (=U3J)
#11486
 23621 ON SEMICONDUCTOR 1923 шт
7 грн.
100+6,30 грн.
200+5,60 грн.
500+4,90 грн.
0.6 SMD DO-214AB 600V 3.0A — Fast 2500pcs single
Diode D310
Diode D310
#8893
 22791 СНГ 1908 шт
2 грн.
50+1,80 грн.
200+1,60 грн.
500+1,40 грн.
Diode germanium, diffusion, pulse. 0.3 DIP D104 20V 500mA 800mA Pulse 100 pieces. single
Diode KD208A (green drop)
Diode KD208A (green drop)
#14415
 26624 СНГ 1866 шт
1 грн.
50+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Diodes KD208A silicon, diffusion, rectifier. Designed to convert alternating voltage with a frequency of up to 1.0 kHz. The main technical characteristics of the KD208A diode: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 1.5 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 100 µA at Uobr 100 V. 0.3 DIP — 100V 1.5A — Rectifier 1000pcs single
Diode KD202A
Diode KD202A
#15974
 28208 СНГ 1797 шт
7 грн.
50+6,30 грн.
200+5,60 грн.
500+4,90 грн.
Diodes KD202V silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. Produced in a glass-to-metal housing with hard leads. The type of diode and the connection diagram of the electrodes with the leads are given on the case. Main technical characteristics of the KD202V diode: • uobr and max - Maximum pulse reverse voltage: 50 V; • • inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1 .2 kHz; • unp - DC forward voltage: no more than 0.9 V at inp 5 A; 5.2 Screw КД-11 50V 5A — Rectifier 100 pieces. single
Diode 1N5404
Diode 1N5404
#16090
 28330 MIC 1592 шт
3 грн.
100+2,70 грн.
200+2,40 грн.
500+2,10 грн.
1 DIP DO-201AD 400V 3.0A — Rectifier 500pcs —
Diode LL4148 (=DL4148)
Diode LL4148 (=DL4148)
#13714
 25878 SEMTECH ELECTRONICS 1568 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
0.12 SMD SOD80 75V 200mA — Pulse 2500pcs single