Diode bridges domestic
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| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Mounting type | Urev. max, V | Ipr. max. | Ipr. imp. max. | Diode type | Factory packaging | Diode design |
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Diode bridge KTS405B
#14125
|
26306 | СНГ | 2992 шт |
7 грн.
|
The main technical characteristics of the KTs405B diode: • Uopp max - Maximum direct reverse voltage: 500 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 500 V. | 5.2 | DIP | 500V | 1A | — | Diode bridge | 500pcs | — | |||
Diode bridge KTS402E
#12158
|
24451 | СНГ | 1298 шт |
12 грн.
|
Block of silicon, diffusion diodes. The main technical characteristics of the diode KTS402E: • Uobr and max - Maximum impulse reverse voltage: 100 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 100 V. | 5.7 | DIP | 100V | 1A | — | Diode bridge | 100 pieces. | — | |||
Diode bridge KTS405E
#8870
|
22957 | СНГ | 502 шт |
6 грн.
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Diode bridge 1A 100V. | 4 | DIP | 100V | 1A | — | Diode bridge | 100 pieces. | — | |||
Diode bridge KTS405I
#14128
|
26309 | СНГ | 417 шт |
7 грн.
|
The main technical characteristics of the KTS405I diode: • Uopp max - Maximum direct reverse voltage: 500 V; • Inp max - Maximum forward current: 600 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 600 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 500 V. | 5.2 | DIP | 500V | 600mA | — | Diode bridge | 500pcs | — | |||
Diode bridge KTS402D
#14368
|
26578 | СНГ | 398 шт |
15 грн.
|
Block of silicon, diffusion diodes. The main technical characteristics of the KTs402D diode: • Uobr and max - Maximum impulse reverse voltage: 200 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 µA at Uobr 200 V. | 5.7 | DIP | 200V | 1A | — | Diode bridge | 100 pieces. | — | |||
Diode bridge KTS402Zh
#11585
|
23816 | СНГ | 394 шт |
15 грн.
|
Block of silicon, diffusion diodes. The main technical characteristics of the KTs402Zh diode: • Uobr and max - Maximum impulse reverse voltage: 600 V; • Inp max - Maximum forward current: 600 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 600 mA; • Iobr - Constant reverse current: no more than 125 µA at Uobr 600 V. | 5.7 | DIP | 600V | 600mA | — | Diode bridge | 100 pieces. | — | |||
Diode bridge KTS402I
#15988
|
28222 | СНГ | 326 шт |
20 грн.
|
A block of silicon, diffusion diodes. Main technical characteristics of the diode KTS402I: • Uobr and max - Maximum pulse reverse voltage: 500 V; • Inp max - Maximum forward current: 600 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - DC reverse current: no more than 125 µA at Uobr 500 V. | 5.7 | DIP | 500V | 600mA | — | Diode bridge | 150pcs | — | |||
Diode assembly KD205B
#14359
|
26571 | СНГ | 189 шт |
16 грн.
|
Diode assemblies KD205B, each consisting of two silicon diffusion diodes, with separate leads. Designed to convert alternating voltage with a frequency of up to 5 kHz in power supply units of radio-electronic equipment. The main technical characteristics of the KD205B diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 500 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 500 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 400 V | 5.7 | DIP | 400V | 500mA | — | Rectifier | 100 pieces. | assembly | |||
Diode bridge KTS405AT
#13929
|
26108 | СНГ | 64 шт |
10 грн.
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Diode bridge 1.2A 400V | 5.7 | DIP | 400V | 1.2A | — | Diode bridge | 500pcs | — | |||
Diode assembly KD205BT
#13978
|
26158 | СНГ | 64 шт |
16 грн.
|
Diode assemblies KD205BT, each consisting of two silicon diffusion diodes, with separate leads. Designed to convert alternating voltage with a frequency of up to 5 kHz in power supply units of radio-electronic equipment. The main technical characteristics of the KD205BT diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 500 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 500 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 400 V | 5.7 | DIP | 400V | 500mA | — | Rectifier | 100 pieces. | assembly | |||
Diode bridge KTS403A
#14360
|
26572 | СНГ | 50 шт |
45 грн.
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Assembly of two single-phase diode bridges. Designed for rectifying alternating current with a frequency of up to 5 kHz. | 11 | DIP | 600V | 1A | — | Diode bridge | 100 pieces. | — | |||
Diode bridge KTS405D
#14126
|
26307 | СНГ | 46 шт |
7 грн.
|
The main technical characteristics of the KTs405D diode: • Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 µA at Uobr 200 V. | 5.2 | DIP | 200V | 1A | — | Diode bridge | 500pcs | — | |||
Diode bridge KTS405ZH
#14365
|
26577 | СНГ | 42 шт |
7 грн.
|
The main technical characteristics of the KTs405Zh diode: • Uopp max - Maximum direct reverse voltage: 600 V; • Inp max - Maximum forward current: 600 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 600 mA; • Iobr - Constant reverse current: no more than 125 µA at Uobr 600 V. | 5.2 | DIP | 600V | 600mA | — | Diode bridge | 500pcs | — | |||
Diode assembly KD205DT
#13956
|
26136 | СНГ | 37 шт |
10 грн.
|
Diode assemblies KD205DT, each consisting of two silicon diffusion diodes, with separate leads. Designed to convert alternating voltage with a frequency of up to 5 kHz in power supply units of radio-electronic equipment. The main technical characteristics of the KD205DT diode: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 500 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 500 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 100 V | 5.7 | DIP | 100V | 500mA | — | Rectifier | 100 pieces. | assembly | |||
Diode assembly KD205I
#14370
|
26580 | СНГ | 20 шт |
25 грн.
|
Diode assembly, consisting of two silicon, diffusion diodes, with separate outputs. Main technical characteristics of KD205I: • Uopp max - Maximum direct reverse voltage: 700 V; • Inp max - Maximum forward current: 600 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 600 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 700 V | 4 | DIP | 700V | 600mA | — | Rectifier | 100 pieces. | — | |||
Diode bridge KTS405A
#13933
|
26112 | СНГ | 19 шт |
8 грн.
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Diode bridge 1A 600V | 5.2 | DIP | 600V | 1A | — | Diode bridge | 500pcs | — | |||
Diode bridge KTS402A
#13710
|
25874 | СНГ | 4 шт |
30 грн.
|
Block of silicon, diffusion diodes. The main technical characteristics of the diode KTS402A: • Uobr and max - Maximum impulse reverse voltage: 600 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 µA at Uobr 600 V. | 5.7 | DIP | 600V | 1A | — | Diode bridge | 100 pieces. | — | |||
Diode bridge KTS405G
#14127
|
26308 | СНГ | 3 шт |
7 грн.
|
The main technical characteristics of the KTs405G diode: • Uopp max - Maximum direct reverse voltage: 300 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 300 V. | 5.2 | DIP | 300V | 1A | — | Diode bridge | 500pcs | — | |||
Diode bridge KTS403B
#14361
|
26573 | СНГ | 2 шт |
40 грн.
|
Assembly of two single-phase diode bridges. Designed for rectifying alternating current with a frequency of up to 5 kHz. | 11 | DIP | 500V | 1A | — | Diode bridge | 100 pieces. | — | |||
Diode bridge KTS403V
#14362
|
26574 | СНГ | 2 шт |
30 грн.
|
Assembly of two single-phase diode bridges. Designed for rectifying alternating current with a frequency of up to 5 kHz. | 11 | DIP | 400V | 1A | — | Diode bridge | 100 pieces. | — | |||
Diode bridge KTs402G
#13949
|
26129 | СНГ | 1 шт |
15 грн.
|
Block of silicon, diffusion diodes. The main technical characteristics of the KTs402G diode: • Uobr and max - Maximum impulse reverse voltage: 300 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 300 V. | 5.7 | DIP | 300V | 1A | — | Diode bridge | 100 pieces. | — | |||
Diode bridge KTS403D
#14363
|
26575 | СНГ | 1 шт |
25 грн.
|
Assembly of two single-phase diode bridges. Designed for rectifying alternating current with a frequency of up to 5 kHz. | 11 | DIP | 200V | 1A | — | Diode bridge | 100 pieces. | — | |||
Diode bridge KTS402B
#8868
|
26128 | СНГ | — |
25 грн.
|
— | Block of silicon, diffusion diodes. The main technical characteristics of the KTs402B diode: • Uobr and max - Maximum impulse reverse voltage: 500 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 500 V. | 5.7 | DIP | 500V | 1A | — | Diode bridge | 150pcs | — | ||
KTS404A
#8869
|
70004 | — | — |
15 грн.
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— | — | — | — | — | — | — | — | — | — | ||
Diode Assembly KD205A
#8871
|
22959 | СНГ | — |
20 грн.
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— | Diode assembly, consisting of two silicon, diffusion diodes, with separate outputs. Main technical characteristics of KD205A: • Uopp max - Maximum direct reverse voltage: 500 V; • Inp max - Maximum forward current: 500 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 500 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 500 V | 4 | DIP | 500V | 500mA | — | Rectifier | 100 pieces. | — | ||
Diode bridge KTS407A
#13951
|
26131 | СНГ | — |
30 грн.
|
— | KTS407A A block of silicon, mesadiffusion diodes connected in a bridge circuit. Available in a plastic case with flexible leads. The main technical characteristics of the diode KTS407A: • Uobr and max - Maximum impulse reverse voltage: 400 V; • Inp max - Maximum forward current: 500 mA; • Inp and max - Maximum pulse forward current: 3 A; • fd - Operating frequency of the diode: 20 kHz; • Iobr - Constant reverse current: no more than 5 μA at Uobr 400 V; • tvoc - Reverse recovery time: 5 µs. | 0.5 | DIP | 400V | 500mA | 3A | Diode bridge | 500pcs | — | ||
Diode bridge KTS405V
#14364
|
26576 | СНГ | — |
7 грн.
|
— | The main technical characteristics of the KTs405V diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 400 V. | 5.2 | DIP | 400V | 1A | — | Diode bridge | 500pcs | — | ||
Diode bridge KTS402V
#14369
|
26579 | СНГ | — |
20 грн.
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— | Block of silicon, diffusion diodes. The main technical characteristics of the KTs402V diode: • Uobr and max - Maximum impulse reverse voltage: 400 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 400 V. | 5.7 | DIP | 400V | 1A | — | Diode bridge | 100 pieces. | — |