Diode bridge KTS402E
| Manufacturer | СНГ |
| SKU | |
| Categories | Diode bridges domestic |
Features
| Type | Description | |
|---|---|---|
| Diode type | Diode bridge | |
| Urev. max, V | 100V | |
| Ipr. max. | 1A | |
| Brand name | СНГ | |
| Mounting type | DIP | |
| Weight g. | 5.7 | |
| Factory packaging | 100 pieces. |
Description
Block of silicon, diffusion diodes.
The main technical characteristics of the diode KTS402E:
• Uobr and max - Maximum impulse reverse voltage: 100 V;
• Inp max - Maximum forward current: 1000 mA;
• fd - Operating frequency of the diode: 5 kHz;
• Unp - DC forward voltage: no more than 4 V at Inp 1000 mA;
• Iobr - Constant reverse current: no more than 125 μA at Uobr 100 V.
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216 грн.
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2.20 грн.
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4 грн.
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Diode RGP30K ( 3A 800V 500nS)
8 грн.
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Socket m/s, pitch 2.54mm SCS-8
1.50 грн.
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Socket m/s, pitch 2.54mm SCS-14
2.50 грн.
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