Microwave diode 2A523A-4

The working element of the diode is a pin-type semiconductor structure.
Designed for use in switching devices of the decimeter and centimeter wavelength ranges as part of hybrid integrated circuits that provide sealing and protection of devices from moisture, salt fog, mold fungi, hoarfrost and dew, low and high pressure.
They are produced in a frameless design with hard leads on a crystal holder with a protective coating.
Marked: 2A523A-4 - one black dot at the positive electrode.
The main technical parameters of the microwave diode 2A523A-4:
• Critical diode switching frequency: not less than 200 GHz;
• Continuous power dissipation: 20W;
• Direct forward current: no more than 300 mA;
• Constant reverse current: no more than 4mA;
• Forward voltage across the diode: no more than 1.2 V;
• Constant reverse voltage: no more than 200 V;
• Accumulated diode charge: no more than 220 nC;
• Direct loss resistance: no more than 0.5 Ohm;
• Total diode capacitance: no more than 1.5 pF;
• Ambient temperature: -60...+125 °С;
• Minimum operating time: 25000 hours.