Diodes domestic
Filter layout:
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| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Diode type | Factory packaging | Diode design |
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Diode KD202V
#9737
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21147 | СНГ | 41689 шт |
7 грн.
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Diodes KD202V silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. Are issued in the glass-to-metal case with rigid conclusions. The type of the diode and the connection diagram of the electrodes with the leads are given on the case. The main technical characteristics of the KD202V diode: • uobp and max - Maximum impulse reverse voltage: 100 V; • inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • unp - DC forward voltage: no more than 0.9 V at inp 5 A; • iobr - Constant reverse current: no more than 800 µA at uobp 100 V | 5.2 | Screw | КД-11 | 100V | 5A | — | Rectifier | 100 pieces. | single | ||||||||
KDS111A, Diode assembly
#9760
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21279 | СНГ | 13464 шт |
1.80 грн.
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Diode assembly, each consisting of two diodes connected with a common cathode. | 0.3 | DIP | — | 300V | 200mA | — | Rectifier | 250pcs | double common cathode | ||||||||
Diode KD209A
#15525
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27764 | СНГ | 7318 шт |
1 грн.
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The main technical characteristics of the KD209A diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 700 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 700 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 400 V. | 0.4 | DIP | — | 400V | 700mA | — | Rectifier | 500pcs | single | ||||||||
Diode KD105B (type 2)
#9889
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21674 | СНГ | 6804 шт |
1 грн.
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Silicon diodes, diffusion. Are issued in the plastic case with flexible conclusions. | 0.3 | DIP | — | 400V | 300mA | — | Rectifier | 2000pcs | single | ||||||||
Diode 2D202R (=KD202R)
#10770
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22840 | СНГ | 6249 шт |
10 грн.
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Diodes 2D202R silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. Are issued in the glass-to-metal case with rigid conclusions. The type of the diode and the connection diagram of the electrodes with the leads are given on the case. Diode weight no more than 5.2 g, with accessories no more than 7 g. Hull type: KDYu-11-2. Specifications: UZh3.362.035 TU. The main technical characteristics of the diode 2D202R: • Uobr and max - Maximum impulse reverse voltage: 600 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 600 V | 5.2 | Screw | КД-11 | 600V | 5A | — | Rectifier | 100 pieces. | single | ||||||||
Microwave diode 3A121A
#9804
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21385 | СНГ | 4865 шт |
46 грн.
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The main technical parameters of the microwave diode 3A121A: • Operating frequency: no more than 40 GHz; • Conversion loss: no more than 9 dB; • Rectified current: 0.3...1.4 mA; • Rated noise figure: no more than 9 dB; • Voltage standing wave ratio: no more than 3; • Output impedance: 200...600 Ohm; • DC forward voltage: 0.55...1.2 V; • Pulsed incident power: 100 mW; • Ambient temperature: -60...+85°С; • Minimum operating time: 50,000 hours; | 0.0015 | SMD | КД-124 | — | — | — | Microwave | 80pcs | single | ||||||||
Diode 2D202V (=KD202V)
#12224
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24603 | СНГ | 4494 шт |
9 грн.
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The main technical characteristics of the diode 2D202V: • Uobr and max - Maximum impulse reverse voltage: 100 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 100 V. | 5 | Screw | КДЮ-11 | 100V | 5A | — | Rectifier | 100 pieces. | single | ||||||||
Diode assembly KDS523VR
#15848
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28081 | СНГ | 4122 шт |
4 грн.
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Diode assembly consisting of four silicon, planar epitaxial switching diodes, with separate leads. | 1.1 | DIP | — | 50V | 20mA | — | Pulse | 50pcs | assembly | ||||||||
Diode assembly KDS523BM
#9820
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21411 | СНГ | 3607 шт |
2 грн.
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Diode assembly, each consisting of two silicon planar epitaxial switching diodes with separate terminals. Are issued in the plastic case with flexible conclusions. | 0.25 | SMD | — | 50V | 20mA | 200mA | Pulse | 100 pieces. | assembly | ||||||||
Microwave diode 2A523A-4
#13748
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25916 | СНГ | 3402 шт |
142 грн.
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The working element of the diode is a pin-type semiconductor structure. Designed for use in switching devices of the decimeter and centimeter wavelength ranges as part of hybrid integrated circuits that provide sealing and protection of devices from moisture, salt fog, mold fungi, hoarfrost and dew, low and high pressure. They are produced in a frameless design with hard leads on a crystal holder with a protective coating. Marked: 2A523A-4 - one black dot at the positive electrode. The main technical parameters of the microwave diode 2A523A-4: • Critical diode switching frequency: not less than 200 GHz; • Continuous power dissipation: 20W; • Direct forward current: no more than 300 mA; • Constant reverse current: no more than 4mA; • Forward voltage across the diode: no more than 1.2 V; • Constant reverse voltage: no more than 200 V; • Accumulated diode charge: no more than 220 nC; • Direct loss resistance: no more than 0.5 Ohm; • Total diode capacitance: no more than 1.5 pF; • Ambient temperature: -60...+125 °С; • Minimum operating time: 25000 hours. | 0.12 | SMD | — | — | — | — | Microwave | 100 pieces. | single | ||||||||
Diode D220
#8890
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26713 | СНГ | 2991 шт |
2 грн.
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Silicon diode, alloyed, pulsed. The main technical characteristics of the diode D220: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 50 mA; • Inp and max - Maximum pulse forward current: 0.5 A; • Sd - Total capacitance: 15 pF at Uobr 5 V; • Unp - DC forward voltage: no more than 1.5 V at Inp 50 mA; • Iobr - Constant reverse current: no more than 1 μA at Uobr 50 V. | 0.3 | DIP | D104 | 50V | 50mA | — | Rectifier | 100 pieces. | single | ||||||||
Diode KD209A orange.
#14035
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26214 | СНГ | 2805 шт |
1 грн.
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Diodes KD209A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1 kHz. | 0.3 | DIP | КД-5А | 400V | 700mA | — | Rectifier | 500pcs | single | ||||||||
Diode D223
#3409
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22785 | СНГ | 2641 шт |
2 грн.
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Max. permissible reverse voltage, V: 50 Maximum direct forward current, mA: 50 | 0.3 | DIP | D104 | 50V | 50mA | — | Rectifier | 100 pieces. | single | ||||||||
Diode KD521V
#3473
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23549 | СНГ | 2069 шт |
1 грн.
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Type of diode pulse Maximum constant reverse voltage, V 50 Maximum direct (rectified for a half-cycle) current, A 0.05 Hole mounting method Maximum recovery time, µs 0.004 Maximum reverse current, µA 1 Maximum forward voltage, V 1 at Ipr., A 0.05 Total capacity, Sd.pF 4 Operating temperature, С -60...125 Housing kd 3 | 0.2 | DIP | КД-2 | 50V | 50mA | 500mA | Pulse | 500pcs | single | ||||||||
Diode D310
#8893
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22791 | СНГ | 1908 шт |
2 грн.
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Diode germanium, diffusion, pulse. | 0.3 | DIP | D104 | 20V | 500mA | 800mA | Pulse | 100 pieces. | single | ||||||||
Diode KD208A (green drop)
#14415
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26624 | СНГ | 1866 шт |
1 грн.
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Diodes KD208A silicon, diffusion, rectifier. Designed to convert alternating voltage with a frequency of up to 1.0 kHz. The main technical characteristics of the KD208A diode: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 1.5 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 100 µA at Uobr 100 V. | 0.3 | DIP | — | 100V | 1.5A | — | Rectifier | 1000pcs | single | ||||||||
Diode KD202A
#15974
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28208 | СНГ | 1797 шт |
7 грн.
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Diodes KD202V silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. Produced in a glass-to-metal housing with hard leads. The type of diode and the connection diagram of the electrodes with the leads are given on the case. Main technical characteristics of the KD202V diode: • uobr and max - Maximum pulse reverse voltage: 50 V; • • inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1 .2 kHz; • unp - DC forward voltage: no more than 0.9 V at inp 5 A; | 5.2 | Screw | КД-11 | 50V | 5A | — | Rectifier | 100 pieces. | single | ||||||||
Diode KD243D
#14492
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26707 | СНГ | 1426 шт |
2 грн.
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Diodes KD243D silicon, diffusion, rectifier. Are intended for transformation of alternating voltage with a frequency up to 70 kHz. The main technical characteristics of the KD243D diode: • Uopp max - Maximum direct reverse voltage: 600 V; • Inp max - Maximum forward current: 1 A; • Inp and max - Maximum pulse forward current: 6 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1.1 V at Inp 1 A; • Iobr - Constant reverse current: no more than 10 μA at Uobr 600 V. | 0.4 | DIP | КД-4 | 600V | 1A | — | Rectifier | 1000pcs | single | ||||||||
Diode KD209B (drop)
#15524
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27763 | СНГ | 1024 шт |
1 грн.
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The main technical characteristics of the KD209B diode: • Uopp max - Maximum direct reverse voltage: 600 V; • Inp max - Maximum forward current: 500 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 500 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 600 V. | 0.4 | DIP | — | 600V | 500mA | — | Rectifier | 1000pcs | single | ||||||||
Diode 2D213A (=KD213A)
#12227
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24606 | СНГ | 913 шт |
25 грн.
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The main technical characteristics of the diode 2D213A: • Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 200 µA at Uobr 200 V; • tvoc arr - Reverse recovery time: 0.3 µs; • Sd - Total capacitance: 550 pF at Uobr 100 V. | 3.5 | DIP | КД-23 | 200V | 10A | — | Rectifier | 50pcs | single | ||||||||
Diode Assembly 2DS523BM
#11817
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24047 | СНГ | 852 шт |
3 грн.
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Diode assembly, each consisting of two silicon planar epitaxial switching diodes with separate terminals. Are issued in the plastic case with flexible conclusions. | 0.25 | SMD | — | 50V | 20mA | 200mA | Pulse | 50pcs | assembly | ||||||||
Diode KD221B
#11390
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23501 | СНГ | 759 шт |
0.70 грн.
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Diodes KD221B silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 50 kHz. | 0.3 | DIP | КД-5А | 200V | 500mA | — | Rectifier | 500pcs | single | ||||||||
Diode KD243G
#14491
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26706 | СНГ | 715 шт |
2 грн.
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Diodes KD243G silicon, diffusion, rectifier. Are intended for transformation of alternating voltage with a frequency up to 70 kHz. The main technical characteristics of the diode KD243G: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 1 A; • Inp and max - Maximum pulse forward current: 6 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1.1 V at Inp 1 A; • Iobr - Constant reverse current: no more than 10 μA at Uobr 400 V. | 0.4 | DIP | КД-4 | 400V | 1A | — | Rectifier | 1000pcs | single | ||||||||
Rectifier pole KTS201V
#9876
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21655 | СНГ | 637 шт |
40 грн.
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A column of silicon, diffusion, avalanche diodes, pulsed. Designed to convert alternating pulsed voltage with a frequency of up to 1 kHz. | 63 | Screw | — | 6kV | 500mA | — | High voltage | 20pcs | assembly | ||||||||
Diode KD221V
#11453
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23583 | СНГ | 592 шт |
0.80 грн.
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Diodes KD221V silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 50 kHz. | 0.3 | DIP | КД-5А | 400V | 300mA | — | Rectifier | 1000pcs | single | ||||||||
Diode KD209B
#15523
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27762 | СНГ | 551 шт |
1 грн.
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Основные технические характеристики диода КД209Б: • Uoбp max - Максимальное постоянное обратное напряжение: 600 В; • Inp max - Максимальный прямой ток: 500 мА; • fд - Рабочая частота диода: 1 кГц; • Unp - Постоянное прямое напряжение: не более 1 В при Inp 500 мА; • Ioбp - Постоянный обратный ток: не более 100 мкА при Uoбp 600 В. | 0.4 | DIP | — | 600V | 500mA | — | Rectifier | 500pcs | single | ||||||||
Diode KD202D
#14040
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26219 | СНГ | 514 шт |
8 грн.
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Diodes KD202D silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. The main technical characteristics of the KD202D diode: • Uobr and max - Maximum impulse reverse voltage: 200 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 200 V | 5 | Screw | КДЮ-11 | 140V | 5A | — | Rectifier | 100 pieces. | single | ||||||||
Diode KD204B
#14036
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26215 | СНГ | 434 шт |
10 грн.
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Designed to convert alternating voltage with a frequency of up to 50 kHz. The main technical characteristics of the KD204B diode: • Uobr and max - Maximum impulse reverse voltage: 200 V; • Inp max - Maximum forward current: 600 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1.4 V at Inp 600 mA; • Iobr - Constant reverse current: no more than 100 µA at Uobr 200 V; • tvoc - Reverse recovery time: 1.5 µs | 5 | Screw | КД-11 | 200V | 600mA | — | Rectifier | 50pcs | single | ||||||||
Diode KD202Zh
#13737
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25905 | СНГ | 409 шт |
7 грн.
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The main technical characteristics of the KD202Zh diode: • Uobr and max - Maximum impulse reverse voltage: 300 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 µA at Uobr 300 V. | 4.5 | Screw | КДЮ-11 | 210V | 5A | — | Rectifier | 100 pieces. | single | ||||||||
Diode 2D503A (=KD503A)
#3474
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24038 | СНГ | 373 шт |
3 грн.
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Designed for use as switching elements in high-speed impulse devices of the nanosecond range. Are issued in the glass case with flexible conclusions. | 0.25 | DIP | КД-121 | 30V | 20mA | — | Pulse | 100 pieces. | single |