Diodes domestic
Filter layout:
|
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Diode type | Factory packaging | Diode design |
|---|
|
Diode KD203A
#16286
|
28533 | СНГ | 232 шт |
35 грн.
|
|
Main technical characteristics of the KD203A diode: • Uobp max - Maximum constant reverse voltage: 420 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - Constant forward voltage: no more than 1 V at Inp 10 A; • Iobp - Constant reverse current: no more than 1500 µA at Uobp 600 V. | 12 | Screw | — | 420V | 10A | 30A | Rectifier | 25pcs | single | ||||||||
|
Diode D101A flat terminals
#15804
|
28041 | СНГ | 224 шт |
3 грн.
|
|
Diodes D101A silicon, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. | 0.9 | DIP | — | 75V | 30mA | — | Rectifier | 500pcs | single | ||||||||
|
Diode D206
#13706
|
25869 | СНГ | 216 шт |
4 грн.
|
|
Diodes D206 silicon, alloy. Designed to convert alternating voltage with a frequency of up to 1 kHz The main technical characteristics of the diode D206: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 100 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 100 V. | 1 | DIP | КД-9 | 100V | 50mA | — | Rectifier | 100 pieces. | single | ||||||||
|
Diode KD202K
#14038
|
26217 | СНГ | 212 шт |
8 грн.
|
|
Diodes KD202K silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. The main technical characteristics of the KD202K diode: • Uobr and max - Maximum impulse reverse voltage: 400 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 400 V | 4.5 | Screw | КДЮ-11 | 280V | 5A | — | Rectifier | 100 pieces. | single | ||||||||
|
Diode assembly KDS523AM
#16254
|
28501 | СНГ | 210 шт |
2 грн.
|
|
Diode assembly, each consisting of two silicon planar epitaxial pulse diodes with separate leads. Available in a plastic case with flexible leads. | 0.25 | SMD | — | 50V | 20mA | 200mA | Pulse | 100 pieces. | assembly | ||||||||
|
Diode KD209A green
#11389
|
23500 | СНГ | 198 шт |
1 грн.
|
|
Diodes KD209A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1 kHz. | 0.3 | DIP | КД-5А | 400V | 700mA | — | Rectifier | 500pcs | single | ||||||||
|
Diode E115A (=KD219A)
#14494
|
26709 | СНГ | 196 шт |
15 грн.
|
|
Diodes KD219A silicon, epitaxial, with a Schottky barrier. Designed for use in low-voltage secondary power supplies at frequencies of 10...200 kHz. The main technical characteristics of the diode 2KD219A: • Uobr and max - Maximum impulse reverse voltage: 15 V; • Inp max - Maximum forward current: 10 A; • Inp and max - Maximum pulse forward current: 250 A; • Unp - DC forward voltage: no more than 0.6 V at Inp 10 A; • fmax - Maximum operating frequency of the diode: 200 kHz. | 5.2 | Screw | КД-11 | 15V | 10A | — | Schottky | 100 pieces. | single | ||||||||
|
Diode D223A
#8891
|
22786 | СНГ | 167 шт |
3 грн.
|
|
Main technical characteristics of the D223A diode: • Uobp max - Maximum constant reverse voltage: 100 V; • Inp max - Maximum forward current: 50 mA; • Unp - Constant forward voltage: no more than 1 V at Inp 50 mA; • Iobp - Constant reverse current: no more than 1 µA at Uobp 100 V. | 0.3 | DIP | D104 | 100V | 50mA | — | Rectifier | 100 pieces. | single | ||||||||
|
Rectifier pole KTS201G
#11218
|
23352 | СНГ | 166 шт |
45 грн.
|
|
A column of silicon, diffusion, avalanche diodes, pulsed. Designed to convert alternating pulsed voltage with a frequency of up to 1 kHz. | 63 | Screw | — | 8kV | 500mA | — | High voltage | 20pcs | assembly | ||||||||
|
Diode D207
#8876
|
22650 | СНГ | 163 шт |
5 грн.
|
|
• Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 100 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 100 V | 1 | DIP | КД-9 | 200V | 100mA | — | Rectifier | 100 pieces. | single | ||||||||
|
Diode column KTS114A
#13812
|
25990 | СНГ | 151 шт |
10 грн.
|
|
Pillars of silicon, diffusion diodes, rectifiers. Designed for use in high-voltage secondary power supply units with additional sealing. | 1.6 | DIP | — | 4kV | 50mA | — | High voltage | 100 pieces. | single | ||||||||
|
Diode D2Zh
#13961
|
26141 | СНГ | 145 шт |
3 грн.
|
|
Diodes D2Zh germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the D2Zh diode: • Uopp max - Maximum direct reverse voltage: 150 V; • Inp max - Maximum forward current: 8 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 2 mA; • Iobr - Constant reverse current: no more than 250 µA at Uobr 150 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. | 0.7 | DIP | КД-4 | 150V | 8mA | — | Detector | 100 pieces. | single | ||||||||
|
Diode KD248D
#15467
|
27706 | СНГ | 135 шт |
10 грн.
|
|
The main technical characteristics of the KD248D diode: • Uopp max - Maximum direct reverse voltage: 600 V; • Inp max - Maximum forward current: 3 A; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1.4 V at Inp 3 A; • Iobr - Constant reverse current: no more than 40 μA at Uobr 600 V; • tvoc - Reverse recovery time: 0.25 µs. | 1 | DIP | — | 600V | 3.0A | — | Rectifier | 200pcs | single | ||||||||
|
KDS111B, Diode assembly
#11414
|
23531 | СНГ | 134 шт |
2.50 грн.
|
|
Diode assembly, each consisting of two diodes connected with a common anode. | 0.3 | DIP | — | 300V | 200mA | — | Rectifier | 250pcs | double common anode | ||||||||
| 22793 | СНГ | 130 шт |
15 грн.
|
|
Pillars of silicon, diffusion diodes, rectifiers. Designed for use in high-voltage secondary power supply units with additional sealing. | 1.6 | DIP | — | 4kV | 50mA | — | High voltage | 100 pieces. | single | |||||||||
|
Diode KD221A
#11432
|
23550 | СНГ | 130 шт |
1 грн.
|
|
Diodes KD221A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 50 kHz. | 0.3 | DIP | КД-5А | 100V | 700mA | — | Rectifier | 500pcs | single | ||||||||
|
Diode D101A
#16152
|
28393 | СНГ | 106 шт |
3 грн.
|
|
Diodes D101A silicon, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. | 0.3 | DIP | D104 | 75V | 30mA | — | Rectifier | 100 pieces. | single | ||||||||
|
Diode D226B
#8878
|
25873 | СНГ | 100 шт |
5 грн.
|
|
Diodes D226B silicon, alloy. The main technical characteristics of the diode D226B: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 300 V. | 1 | DIP | КД-8 | 400V | 300mA | — | Rectifier | 200pcs | single | ||||||||
|
Diode D226D
#8879
|
22960 | СНГ | 100 шт |
4 грн.
|
|
The main technical characteristics of the diode D226D: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 100 V | 2 | DIP | КД-8 | 100V | 300mA | — | Rectifier | 200pcs | single | ||||||||
|
Diode 2D202Zh (=KD202Zh)
#12225
|
24604 | СНГ | 89 шт |
9 грн.
|
|
The main technical characteristics of the diode 2D202Zh: • Uobr and max - Maximum impulse reverse voltage: 300 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 µA at Uobr 300 V. | 5 | Screw | КДЮ-11 | 210V | 5A | — | Rectifier | 100 pieces. | single | ||||||||
|
Diode KD503A
#12082
|
24370 | СНГ | 81 шт |
2 грн.
|
|
Designed for use as switching elements in high-speed impulse devices of the nanosecond range. Are issued in the glass case with flexible conclusions. | 0.25 | DIP | КД-121 | 30V | 20mA | — | Pulse | 100 pieces. | single | ||||||||
|
Diode KD411AM
#3414
|
22961 | СНГ | 77 шт |
4 грн.
|
|
Silicon diode, diffusion, high-speed. | 2 | DIP | КД-8 | 700V | 2A | — | Fast | 200pcs | single | ||||||||
|
Diode 2D201V (=KD201V)
#12956
|
25227 | СНГ | 77 шт |
30 грн.
|
|
Diodes 2D201V silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. | 13 | Screw | КДЮ-11 | 200V | 5A | 15A | Rectifier | 40pcs | single | ||||||||
|
Diode D223B
#8892
|
22787 | СНГ | 69 шт |
3 грн.
|
|
Silicon, alloy. | 0.3 | DIP | D104 | 150V | 50mA | — | Rectifier | 100 pieces. | single | ||||||||
|
Diode KD202M
#13736
|
25904 | СНГ | 68 шт |
8 грн.
|
|
Diodes KD202M silicon, diffusion. The main technical characteristics of the KD202M diode: • Uobr and max - Maximum impulse reverse voltage: 500 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 500 V | 4.5 | Screw | КД-11 | 350V | 5A | — | Rectifier | 100 pieces. | single | ||||||||
|
Diode KD213A
#8883
|
22967 | СНГ | 65 шт |
25 грн.
|
|
Silicon diode, diffusion. | 4 | DIP | КД-23 | 200V | 10A | — | Rectifier | 200pcs | single | ||||||||
|
Diode D242A
#17037
|
24628 | СНГ | 63 шт |
30 грн.
|
|
Main technical characteristics of the D242A diode: • Uobp max - Maximum constant reverse voltage: 100 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - Constant forward voltage: no more than 1 V at Inp 10 A; • Iobr - Continuous reverse current: no more than 3000 µA at Uobr 100 V. | 13 | Screw | КДЮ-11 | 100V | 10A | — | Rectifier | 50pcs | single | ||||||||
|
Diode D102
#16154
|
28396 | СНГ | 53 шт |
3 грн.
|
|
Diodes D102 silicon, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. | 0.3 | DIP | D104 | 50V | 30mA | — | Rectifier | 100 pieces. | single | ||||||||
|
Diode KD208A (drop orange)
#14629
|
26846 | СНГ | 47 шт |
1 грн.
|
|
Diodes KD208A silicon, diffusion, rectifier. Designed to convert alternating voltage with a frequency of up to 1.0 kHz. The main technical characteristics of the KD208A diode: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 1.5 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 100 µA at Uobr 100 V. | 0.3 | DIP | — | 100V | 1.5A | — | Rectifier | 1000pcs | single | ||||||||
|
Diode D102A
#16153
|
28395 | СНГ | 46 шт |
3 грн.
|
|
Diodes D102A silicon, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. | 0.3 | DIP | D104 | 50V | 30mA | — | Rectifier | 100 pieces. | single |