Diodes, bridges

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Mounting type Type of shell Urev. max, V Ipr. max. Ipr. imp. max. Diode type Factory packaging Diode design
Diode BY252
Diode BY252
#16087
 28326 DIOTEC SEMICONDUCTOR 1439 шт
4 грн.
100+3,60 грн.
200+3,20 грн.
500+2,80 грн.
0.6 DIP DO-201AD 400V 3.0A — Fast 1000pcs single
Diode KD243D
Diode KD243D
#14492
 26707 СНГ 1426 шт
2 грн.
50+1,80 грн.
200+1,60 грн.
500+1,40 грн.
Diodes KD243D silicon, diffusion, rectifier. Are intended for transformation of alternating voltage with a frequency up to 70 kHz. The main technical characteristics of the KD243D diode: • Uopp max - Maximum direct reverse voltage: 600 V; • Inp max - Maximum forward current: 1 A; • Inp and max - Maximum pulse forward current: 6 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1.1 V at Inp 1 A; • Iobr - Constant reverse current: no more than 10 μA at Uobr 600 V. 0.4 DIP КД-4 600V 1A — Rectifier 1000pcs single
Diode US1M
Diode US1M
#10464
 22487 TOSHIBA 1304 шт
1.50 грн.
100+1,35 грн.
200+1,20 грн.
500+1,05 грн.
0.3 SMD SMA 1000V 1A — Fast 2000pcs single
Diode bridge KTS402E
Diode bridge KTS402E
#12158
 24451 СНГ 1298 шт
12 грн.
Block of silicon, diffusion diodes. The main technical characteristics of the diode KTS402E: • Uobr and max - Maximum impulse reverse voltage: 100 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 100 V. 5.7 DIP — 100V 1A — Diode bridge 100 pieces. —
Diode BY251
Diode BY251
#16086
 28325 DIOTEC SEMICONDUCTOR 1289 шт
3 грн.
100+2,70 грн.
200+2,40 грн.
500+2,10 грн.
0.6 DIP DO-201AD 200V 3.0A — Fast 1000pcs single
Diode BY255
Diode BY255
#1019
 28327 DIOTEC SEMICONDUCTOR 1204 шт
5 грн.
100+4,50 грн.
200+4 грн.
500+3,50 грн.
0.6 DIP DO-201AD 1300V 3.0A — Fast 1000pcs single
Diode UF4002 (1.0A/100V 50ns)
Diode UF4002 (1.0A/100V 50ns)
#16048
 28287 FAIRCHILD SEMICONDUCTOR 1110 шт
2 грн.
100+1,80 грн.
200+1,60 грн.
500+1,40 грн.
0.2 DIP DO-41 100V 1A — Fast 5000pcs single
Diode KD209B (drop)
Diode KD209B (drop)
#15524
 27763 СНГ 1024 шт
1 грн.
50+0,90 грн.
200+0,80 грн.
500+0,70 грн.
The main technical characteristics of the KD209B diode: • Uopp max - Maximum direct reverse voltage: 600 V; • Inp max - Maximum forward current: 500 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 500 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 600 V. 0.4 DIP — 600V 500mA — Rectifier 1000pcs single
Diode HER306G
Diode HER306G
#17232
 29485 MCC 1000 шт
4 грн.
100+3,60 грн.
200+3,20 грн.
500+2,80 грн.
1 DIP DO-27 600V 3.0A — Fast 1200pcs. single
Diode HER108 LGE
Diode HER108 LGE
#17231
 29484 LGE 990 шт
1.50 грн.
100+1,35 грн.
200+1,20 грн.
500+1,05 грн.
0.3 DIP DO-41 1000V 1A — Fast 1000pcs single
Diode UF4007 (1.0A/1000V 75ns)
Diode UF4007 (1.0A/1000V 75ns)
#1047
 20135 MIC 987 шт
2 грн.
100+1,80 грн.
200+1,60 грн.
500+1,40 грн.
0.2 DIP DO-41 1000V 1A — Fast 5000pcs single
Diode 1N4148WS
Diode 1N4148WS
#9702
 21041 DIOTEC SEMICONDUCTOR 918 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
0.05 SMD SOD-323 100V 300mA — Pulse 3000pcs single
Diode 2D213A (=KD213A)
Diode 2D213A (=KD213A)
#12227
 24606 СНГ 903 шт
25 грн.
50+22,50 грн.
200+20 грн.
500+17,50 грн.
The main technical characteristics of the diode 2D213A: • Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 200 µA at Uobr 200 V; • tvoc arr - Reverse recovery time: 0.3 µs; • Sd - Total capacitance: 550 pF at Uobr 100 V. 3.5 DIP КД-23 200V 10A — Rectifier 50pcs single
Diode Assembly 2DS523BM
Diode Assembly 2DS523BM
#11817
 24047 СНГ 852 шт
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Diode assembly, each consisting of two silicon planar epitaxial switching diodes with separate terminals. Are issued in the plastic case with flexible conclusions. 0.25 SMD — 50V 20mA 200mA Pulse 50pcs assembly
Diode KD221B
Diode KD221B
#11390
 23501 СНГ 759 шт
0.70 грн.
50+0,63 грн.
200+0,56 грн.
500+0,49 грн.
Diodes KD221B silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 50 kHz. 0.3 DIP КД-5А 200V 500mA — Rectifier 500pcs single
Diode BY500-600
Diode BY500-600
#16602
 28881 DIOTEC SEMICONDUCTOR 752 шт
12 грн.
100+10,80 грн.
200+9,60 грн.
500+8,40 грн.
0.6 DIP DO-201AD 600V 5A — Fast 1000pcs single
Diode KD243G
Diode KD243G
#14491
 26706 СНГ 715 шт
2 грн.
50+1,80 грн.
200+1,60 грн.
500+1,40 грн.
Diodes KD243G silicon, diffusion, rectifier. Are intended for transformation of alternating voltage with a frequency up to 70 kHz. The main technical characteristics of the diode KD243G: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 1 A; • Inp and max - Maximum pulse forward current: 6 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1.1 V at Inp 1 A; • Iobr - Constant reverse current: no more than 10 μA at Uobr 400 V. 0.4 DIP КД-4 400V 1A — Rectifier 1000pcs single
Diode 1N4007 (SEMTECH ELECTRONICS)
Diode 1N4007 (SEMTECH ELECTRONICS)
#1001
 20151 SEMTECH ELECTRONICS 666 шт
1.50 грн.
100+1,35 грн.
200+1,20 грн.
500+1,05 грн.
1000V*1A 0.3 DIP DO-41 1000V 1A — Rectifier 5000pcs single
Rectifier pole KTS201V
Rectifier pole KTS201V
#9876
 21655 СНГ 637 шт
40 грн.
50+36 грн.
200+32 грн.
500+28 грн.
A column of silicon, diffusion, avalanche diodes, pulsed. Designed to convert alternating pulsed voltage with a frequency of up to 1 kHz. 63 Screw — 6kV 500mA — High voltage 20pcs assembly
Diode KD221V
Diode KD221V
#11453
 23583 СНГ 592 шт
0.80 грн.
50+0,72 грн.
200+0,64 грн.
500+0,56 грн.
Diodes KD221V silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 50 kHz. 0.3 DIP КД-5А 400V 300mA — Rectifier 1000pcs single
Диод ES1D-E3/61T (ED)
Диод ES1D-E3/61T (ED)
#16913
 29160 VISHAY 588 шт
3 грн.
100+2,70 грн.
200+2,40 грн.
500+2,10 грн.
0.3 SMD DO-214AC, SMA 200V 1A — Fast 1800шт. single
Diode SF18
Diode SF18
#10439
 22453 MIC 545 шт
2 грн.
100+1,80 грн.
200+1,60 грн.
500+1,40 грн.
0.3 DIP DO-41 600V 1A — Fast 1000pcs single
Diode KD202D
Diode KD202D
#14040
 26219 СНГ 514 шт
8 грн.
50+7,20 грн.
200+6,40 грн.
500+5,60 грн.
Diodes KD202D silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. The main technical characteristics of the KD202D diode: • Uobr and max - Maximum impulse reverse voltage: 200 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 200 V 5 Screw КДЮ-11 140V 5A — Rectifier 100 pieces. single
Diode KD209B
Diode KD209B
#15523
 27762 СНГ 501 шт
1 грн.
50+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Основные технические характеристики диода КД209Б: • Uoбp max - Максимальное постоянное обратное напряжение: 600 В; • Inp max - Максимальный прямой ток: 500 мА; • fд - Рабочая частота диода: 1 кГц; • Unp - Постоянное прямое напряжение: не более 1 В при Inp 500 мА; • Ioбp - Постоянный обратный ток: не более 100 мкА при Uoбp 600 В. 0.4 DIP — 600V 500mA — Rectifier 500pcs single
Diode bridge KTS405E
Diode bridge KTS405E
#8870
 22957 СНГ 497 шт
6 грн.
Diode bridge 1A 100V. 4 DIP — 100V 1A — Diode bridge 100 pieces. —
Diode 20A10 (20A, 1000V)
Diode 20A10 (20A, 1000V)
#17182
 29432 YFW 478 шт
11 грн.
100+9,90 грн.
200+8,80 грн.
500+7,70 грн.
1000V 20A 1.8 DIP R-6 1000V 20A — Rectifier 500pcs single
Diode KD204B
Diode KD204B
#14036
 26215 СНГ 434 шт
10 грн.
50+9 грн.
200+8 грн.
500+7 грн.
Designed to convert alternating voltage with a frequency of up to 50 kHz. The main technical characteristics of the KD204B diode: • Uobr and max - Maximum impulse reverse voltage: 200 V; • Inp max - Maximum forward current: 600 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1.4 V at Inp 600 mA; • Iobr - Constant reverse current: no more than 100 µA at Uobr 200 V; • tvoc - Reverse recovery time: 1.5 µs 5 Screw КД-11 200V 600mA — Rectifier 50pcs single
Diode GS1M (1.0A, 1000V) smd
Diode GS1M (1.0A, 1000V) smd
#4271
 20156 DC COMPONENTS 425 шт
1.50 грн.
100+1,35 грн.
200+1,20 грн.
500+1,05 грн.
0.1 SMD DO-214AC, SMA 1000V 1A — Rectifier 2000pcs single
Diode HER157 (1.5A/800V/70ns)
Diode HER157 (1.5A/800V/70ns)
#4266
 20144 DC COMPONENTS 423 шт
2 грн.
100+1,80 грн.
200+1,60 грн.
500+1,40 грн.
Diode 1.5A, 1000V, 70ns 0.4 DIP DO-15 800V 1.5A — Fast 500pcs single
Diode bridge KTS405I
Diode bridge KTS405I
#14128
 26309 СНГ 417 шт
7 грн.
The main technical characteristics of the KTS405I diode: • Uopp max - Maximum direct reverse voltage: 500 V; • Inp max - Maximum forward current: 600 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 600 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 500 V. 5.2 DIP — 500V 600mA — Diode bridge 500pcs —