Diodes, bridges

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Mounting type Type of shell Urev. max, V Ipr. max. Ipr. imp. max. Diode type Factory packaging Diode design
Diode SS10P6HM3
Diode SS10P6HM3
#16773
 29019 VISHAY 414 шт
22 грн.
100+19,80 грн.
200+17,60 грн.
500+15,40 грн.
Diode SS10P6HM3. 0.3 SMD SMPC (TO-277A) 60V 7А 280A Schottky 6500шт. single
Diode KD202Zh
Diode KD202Zh
#13737
 25905 СНГ 402 шт
7 грн.
50+6,30 грн.
200+5,60 грн.
500+4,90 грн.
The main technical characteristics of the KD202Zh diode: • Uobr and max - Maximum impulse reverse voltage: 300 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 µA at Uobr 300 V. 4.5 Screw КДЮ-11 210V 5A — Rectifier 100 pieces. single
Diode bridge KTS402D
Diode bridge KTS402D
#14368
 26578 СНГ 398 шт
15 грн.
Block of silicon, diffusion diodes. The main technical characteristics of the KTs402D diode: • Uobr and max - Maximum impulse reverse voltage: 200 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 µA at Uobr 200 V. 5.7 DIP — 200V 1A — Diode bridge 100 pieces. —
Diode bridge KTS402Zh
Diode bridge KTS402Zh
#11585
 23816 СНГ 394 шт
15 грн.
Block of silicon, diffusion diodes. The main technical characteristics of the KTs402Zh diode: • Uobr and max - Maximum impulse reverse voltage: 600 V; • Inp max - Maximum forward current: 600 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 600 mA; • Iobr - Constant reverse current: no more than 125 µA at Uobr 600 V. 5.7 DIP — 600V 600mA — Diode bridge 100 pieces. —
Diode HER308
Diode HER308
#17233
 29486 DC COMPONENTS 386 шт
5 грн.
100+4,50 грн.
200+4 грн.
500+3,50 грн.
1 DIP DO-27 1000V 3.0A — Fast 1000pcs single
Diode BYV26C
Diode BYV26C
#16605
 28884 VISHAY 376 шт
12 грн.
100+10,80 грн.
200+9,60 грн.
500+8,40 грн.
0.4 DIP SOD-57 600V 1A — Fast 5000pcs single
Diode 2D503A (=KD503A)
Diode 2D503A (=KD503A)
#3474
 24038 СНГ 373 шт
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Designed for use as switching elements in high-speed impulse devices of the nanosecond range. Are issued in the glass case with flexible conclusions. 0.25 DIP КД-121 30V 20mA — Pulse 100 pieces. single
Diode Bridge KBPC810
Diode Bridge KBPC810
#9857
 21636 SEP 356 шт
18 грн.
10+16,20 грн.
50+14,40 грн.
100+13,50 грн.
(1000V;8.0A) — — — — — — — — —
Diode RGP15K (1.5A/800V 500nS)
Diode RGP15K (1.5A/800V 500nS)
#4269
 20159 VISHAY 351 шт
2.20 грн.
100+1,98 грн.
200+1,76 грн.
500+1,54 грн.
0.4 DIP DO-15 800V 1.5A 1.5A Fast 500pcs single
BA157 (1.0A/400V 300ns) (FR104)
BA157 (1.0A/400V 300ns) (FR104)
#4257
 20150 VISHAY 349 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Diode 1A, 400V, 300ns 0.4 DIP DO-41 400V 1A — Fast 500pcs single
Diode 10A10 (10A, 1000V)
Diode 10A10 (10A, 1000V)
#997
 20166 YFW 330 шт
6 грн.
100+5,40 грн.
200+4,80 грн.
500+4,20 грн.
1000V 10A 1.8 DIP R-6 1000V 10A — Rectifier 500pcs single
Diode bridge KTS402I
Diode bridge KTS402I
#15988
 28222 СНГ 326 шт
20 грн.
A block of silicon, diffusion diodes. Main technical characteristics of the diode KTS402I: • Uobr and max - Maximum pulse reverse voltage: 500 V; • Inp max - Maximum forward current: 600 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - DC reverse current: no more than 125 µA at Uobr 500 V. 5.7 DIP — 500V 600mA — Diode bridge 150pcs —
Diode S1M
Diode S1M
#15204
 27444 TOSHIBA 317 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
0.3 SMD SMA 1000V 1A — Rectifier 2000pcs single
Diode R3000F (0.2A, 3000V)
Diode R3000F (0.2A, 3000V)
#4270
 20147 MIC 309 шт
4 грн.
100+3,60 грн.
200+3,20 грн.
500+2,80 грн.
0.4 DIP DO-15 3kV 200mA — High voltage 1000pcs single
Diode KD510A
Diode KD510A
#16195
 28441 СНГ 309 шт
2 грн.
50+1,80 грн.
200+1,60 грн.
500+1,40 грн.
The main technical characteristics of the KD510A diode: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 200 mA; • Unp - DC forward voltage: no more than 1.1 V at Inp 0.2 A; • Iobr - Constant reverse current: no more than 5 μA at Uobr 50 V; • tvoc arr - Reverse recovery time: 0.004 µs; • Sd - Total capacitance: 4 pF. 0.2 DIP КД-2 50V 200mA 1.5A Pulse 1000pcs single
Diode 1N5818
Diode 1N5818
#10339
 22326 MIC 280 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
0.4 DIP DO-41 30V 1A — Schottky 1000pcs single
Diode bridge 2W10
Diode bridge 2W10
#3381
 21806 GALAXY ELECTRICAL 263 шт
4 грн.
10+3,60 грн.
50+3,20 грн.
100+3 грн.
0.9 DIP — 1000V 2A — — 1000pcs —
Diode 1N5817
Diode 1N5817
#11093
 23060 MIC 234 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
0.25 DIP DO-41 20V 1A — Schottky 1000pcs single
Diode PMEG4005ET
Diode PMEG4005ET
#16515
 28763 Nexperia 228 шт
4 грн.
100+3,60 грн.
200+3,20 грн.
500+2,80 грн.
0.043 SMD SOT-23 40V 500mA — Schottky 3000pcs single
Diode D101A flat terminals
Diode D101A flat terminals
#15804
 28041 СНГ 224 шт
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Diodes D101A silicon, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. 0.9 DIP — 75V 30mA — Rectifier 500pcs single
Diode KD203A
Diode KD203A
#16286
 28533 СНГ 223 шт
35 грн.
50+31,50 грн.
200+28 грн.
500+24,50 грн.
Main technical characteristics of the KD203A diode: • Uobp max - Maximum constant reverse voltage: 420 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - Constant forward voltage: no more than 1 V at Inp 10 A; • Iobp - Constant reverse current: no more than 1500 µA at Uobp 600 V. 12 Screw — 420V 10A 30A Rectifier 25pcs single
Diode D206
Diode D206
#13706
 25869 СНГ 216 шт
4 грн.
50+3,60 грн.
200+3,20 грн.
500+2,80 грн.
Diodes D206 silicon, alloy. Designed to convert alternating voltage with a frequency of up to 1 kHz The main technical characteristics of the diode D206: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 100 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 100 V. 1 DIP КД-9 100V 50mA — Rectifier 100 pieces. single
Diode KD202K
Diode KD202K
#14038
 26217 СНГ 212 шт
8 грн.
50+7,20 грн.
200+6,40 грн.
500+5,60 грн.
Diodes KD202K silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. The main technical characteristics of the KD202K diode: • Uobr and max - Maximum impulse reverse voltage: 400 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 400 V 4.5 Screw КДЮ-11 280V 5A — Rectifier 100 pieces. single
Diode assembly KDS523AM
Diode assembly KDS523AM
#16254
 28501 СНГ 210 шт
2 грн.
50+1,80 грн.
200+1,60 грн.
500+1,40 грн.
Diode assembly, each consisting of two silicon planar epitaxial pulse diodes with separate leads. Available in a plastic case with flexible leads. 0.25 SMD — 50V 20mA 200mA Pulse 100 pieces. assembly
Diode E115A (=KD219A)
Diode E115A (=KD219A)
#14494
 26709 СНГ 196 шт
15 грн.
50+13,50 грн.
200+12 грн.
500+10,50 грн.
Diodes KD219A silicon, epitaxial, with a Schottky barrier. Designed for use in low-voltage secondary power supplies at frequencies of 10...200 kHz. The main technical characteristics of the diode 2KD219A: • Uobr and max - Maximum impulse reverse voltage: 15 V; • Inp max - Maximum forward current: 10 A; • Inp and max - Maximum pulse forward current: 250 A; • Unp - DC forward voltage: no more than 0.6 V at Inp 10 A; • fmax - Maximum operating frequency of the diode: 200 kHz. 5.2 Screw КД-11 15V 10A — Schottky 100 pieces. single
Diode 1N4448
Diode 1N4448
#1003
 28488 DIOTEC SEMICONDUCTOR 189 шт
1.50 грн.
100+1,35 грн.
200+1,20 грн.
500+1,05 грн.
200mA 100V DO-35. 0.12 DIP DO-35 100V 200mA — Pulse 5000pcs single
Diode assembly KD205B
Diode assembly KD205B
#14359
 26571 СНГ 189 шт
16 грн.
Diode assemblies KD205B, each consisting of two silicon diffusion diodes, with separate leads. Designed to convert alternating voltage with a frequency of up to 5 kHz in power supply units of radio-electronic equipment. The main technical characteristics of the KD205B diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 500 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 500 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 400 V 5.7 DIP — 400V 500mA — Rectifier 100 pieces. assembly
Diode KD209A green
Diode KD209A green
#11389
 23500 СНГ 186 шт
1 грн.
50+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Diodes KD209A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1 kHz. 0.3 DIP КД-5А 400V 700mA — Rectifier 500pcs single
Diode RL207
Diode RL207
#4261
 20131 DC COMPONENTS 181 шт
1.60 грн.
100+1,44 грн.
200+1,28 грн.
500+1,12 грн.
Diode 2A 1000V 0.4 DIP DO-15 1000V 2A — Rectifier 1000pcs single
Schottky diode SS14
Schottky diode SS14
#10466
 22489 Panjit 178 шт
1.50 грн.
100+1,35 грн.
200+1,20 грн.
500+1,05 грн.
0.3 SMD DO-214AC, SMA 40V 1A — Schottky 1800шт. single