Diodes, bridges

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Mounting type Type of shell Urev. max, V Ipr. max. Ipr. imp. max. Diode type Factory packaging Diode design
20153 BL Galaxy Electrical 170 шт
9 грн.
100+8,10 грн.
200+7,20 грн.
500+6,30 грн.
0.4 DIP DO-201AD 600V 1.5A Fast 1000pcs single
22786 СНГ 167 шт
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Main technical characteristics of the D223A diode: • Uobp max - Maximum constant reverse voltage: 100 V; • Inp max - Maximum forward current: 50 mA; • Unp - Constant forward voltage: no more than 1 V at Inp 50 mA; • Iobp - Constant reverse current: no more than 1 µA at Uobp 100 V. 0.3 DIP D104 100V 50mA Rectifier 100 pieces. single
23352 СНГ 166 шт
45 грн.
50+40,50 грн.
200+36 грн.
500+31,50 грн.
A column of silicon, diffusion, avalanche diodes, pulsed. Designed to convert alternating pulsed voltage with a frequency of up to 1 kHz. 63 Screw 8kV 500mA High voltage 20pcs assembly
22650 СНГ 163 шт
5 грн.
50+4,50 грн.
200+4 грн.
500+3,50 грн.
• Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 100 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 100 V 1 DIP КД-9 200V 100mA Rectifier 100 pieces. single
25990 СНГ 151 шт
10 грн.
50+9 грн.
200+8 грн.
500+7 грн.
Pillars of silicon, diffusion diodes, rectifiers. Designed for use in high-voltage secondary power supply units with additional sealing. 1.6 DIP 4kV 50mA High voltage 100 pieces. single
25661 MIC 146 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
1000V*1.5A*500ns 0.4 DIP DO-15 1000V 1.5A Fast 500pcs single
20158 VISHAY 145 шт
6 грн.
100+5,40 грн.
200+4,80 грн.
500+4,20 грн.
1.6 DIP GP-20 200V 3.0A Fast 500pcs single
26141 СНГ 145 шт
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Diodes D2Zh germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the D2Zh diode: • Uopp max - Maximum direct reverse voltage: 150 V; • Inp max - Maximum forward current: 8 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 2 mA; • Iobr - Constant reverse current: no more than 250 µA at Uobr 150 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. 0.7 DIP КД-4 150V 8mA Detector 100 pieces. single
20296 VISHAY 135 шт
6 грн.
100+5,40 грн.
200+4,80 грн.
500+4,20 грн.
0.5 SMD DO-214AC, SMA 100V 3.0A Schottky 1000pcs single
27706 СНГ 135 шт
10 грн.
50+9 грн.
200+8 грн.
500+7 грн.
The main technical characteristics of the KD248D diode: • Uopp max - Maximum direct reverse voltage: 600 V; • Inp max - Maximum forward current: 3 A; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1.4 V at Inp 3 A; • Iobr - Constant reverse current: no more than 40 μA at Uobr 600 V; • tvoc - Reverse recovery time: 0.25 µs. 1 DIP 600V 3.0A Rectifier 200pcs single
23531 СНГ 134 шт
2.50 грн.
50+2,25 грн.
200+2 грн.
500+1,75 грн.
Diode assembly, each consisting of two diodes connected with a common anode. 0.3 DIP 300V 200mA Rectifier 250pcs double common anode
20149 VISHAY 132 шт
8 грн.
100+7,20 грн.
200+6,40 грн.
500+5,60 грн.
1.6 DIP DO-201AD 800V 3.0A Fast 200pcs single
22793 СНГ 130 шт
15 грн.
50+13,50 грн.
200+12 грн.
500+10,50 грн.
Pillars of silicon, diffusion diodes, rectifiers. Designed for use in high-voltage secondary power supply units with additional sealing. 1.6 DIP 4kV 50mA High voltage 100 pieces. single
23550 СНГ 130 шт
1 грн.
50+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Diodes KD221A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 50 kHz. 0.3 DIP КД-5А 100V 700mA Rectifier 500pcs single
25117 GALAXY ELECTRICAL 128 шт
3 грн.
100+2,70 грн.
200+2,40 грн.
500+2,10 грн.
0.3 SMD DO-214AB 100V 5A Schottky 2000pcs single
20133 MIC 111 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Maximum DC reverse voltage, V1000 Maximum direct (rectified for a half-cycle) current, A1.5 HousingDO15 Operating temperature, С-65…150 0.4 DIP DO-15 1000V 1A Rectifier 500pcs single
28393 СНГ 106 шт
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Diodes D101A silicon, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. 0.3 DIP D104 75V 30mA Rectifier 100 pieces. single
25873 СНГ 100 шт
5 грн.
50+4,50 грн.
200+4 грн.
500+3,50 грн.
Diodes D226B silicon, alloy. The main technical characteristics of the diode D226B: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 300 V. 1 DIP КД-8 400V 300mA Rectifier 200pcs single
22960 СНГ 100 шт
4 грн.
50+3,60 грн.
200+3,20 грн.
500+2,80 грн.
The main technical characteristics of the diode D226D: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 100 V 2 DIP КД-8 100V 300mA Rectifier 200pcs single
29108 DIOTEC SEMICONDUCTOR 98 шт
1.50 грн.
100+1,35 грн.
200+1,20 грн.
500+1,05 грн.
0.1 SMD SOD123 75V 250mA Fast 3000pcs single
29487 ON SEMICONDUCTOR 95 шт
20 грн.
100+18 грн.
200+16 грн.
500+14 грн.
1.1 DIP DO-201AD 1000V Fast 1500pcs. single
20160 MIC 93 шт
10 грн.
100+9 грн.
200+8 грн.
500+7 грн.
1.6 DIP DO-201AD 600V 2A Fast 250pcs single
22520 SEP 92 шт
4 грн.
10+3,60 грн.
50+3,20 грн.
100+3 грн.
0.9 DIP 1000V 1A Diode bridge 250pcs
24604 СНГ 89 шт
9 грн.
50+8,10 грн.
200+7,20 грн.
500+6,30 грн.
The main technical characteristics of the diode 2D202Zh: • Uobr and max - Maximum impulse reverse voltage: 300 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 µA at Uobr 300 V. 5 Screw КДЮ-11 210V 5A Rectifier 100 pieces. single
20572 SEP 86 шт
40 грн.
10+36 грн.
50+32 грн.
100+30 грн.
1000V;50A 17.5 DIP 1000V 50A Diode bridge 50pcs
24370 СНГ 81 шт
2 грн.
50+1,80 грн.
200+1,60 грн.
500+1,40 грн.
Designed for use as switching elements in high-speed impulse devices of the nanosecond range. Are issued in the glass case with flexible conclusions. 0.25 DIP КД-121 30V 20mA Pulse 100 pieces. single
20155 VISHAY 78 шт
6.80 грн.
100+6,12 грн.
200+5,44 грн.
500+4,76 грн.
1.6 DIP DO-201AD 400V 3.0A Fast 500pcs single
22961 СНГ 77 шт
4 грн.
50+3,60 грн.
200+3,20 грн.
500+2,80 грн.
Silicon diode, diffusion, high-speed. 2 DIP КД-8 700V 2A Fast 200pcs single
25227 СНГ 77 шт
30 грн.
50+27 грн.
200+24 грн.
500+21 грн.
Diodes 2D201V silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. 13 Screw КДЮ-11 200V 5A 15A Rectifier 40pcs single
20066 69 шт
2 грн.
10+1,80 грн.
50+1,60 грн.
100+1,50 грн.