Diodes, bridges
Filter layout:
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| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Diode type | Factory packaging | Diode design |
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| 20153 | BL Galaxy Electrical | 170 шт |
9 грн.
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0.4 | DIP | DO-201AD | 600V | 1.5A | — | Fast | 1000pcs | single | ||||||||||
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Diode D223A
#8891
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22786 | СНГ | 167 шт |
3 грн.
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Main technical characteristics of the D223A diode: • Uobp max - Maximum constant reverse voltage: 100 V; • Inp max - Maximum forward current: 50 mA; • Unp - Constant forward voltage: no more than 1 V at Inp 50 mA; • Iobp - Constant reverse current: no more than 1 µA at Uobp 100 V. | 0.3 | DIP | D104 | 100V | 50mA | — | Rectifier | 100 pieces. | single | ||||||||
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Rectifier pole KTS201G
#11218
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23352 | СНГ | 166 шт |
45 грн.
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A column of silicon, diffusion, avalanche diodes, pulsed. Designed to convert alternating pulsed voltage with a frequency of up to 1 kHz. | 63 | Screw | — | 8kV | 500mA | — | High voltage | 20pcs | assembly | ||||||||
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Diode D207
#8876
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22650 | СНГ | 163 шт |
5 грн.
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• Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 100 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 100 V | 1 | DIP | КД-9 | 200V | 100mA | — | Rectifier | 100 pieces. | single | ||||||||
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Diode column KTS114A
#13812
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25990 | СНГ | 151 шт |
10 грн.
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Pillars of silicon, diffusion diodes, rectifiers. Designed for use in high-voltage secondary power supply units with additional sealing. | 1.6 | DIP | — | 4kV | 50mA | — | High voltage | 100 pieces. | single | ||||||||
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Diode FR157
#1024
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25661 | MIC | 146 шт |
1 грн.
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1000V*1.5A*500ns | 0.4 | DIP | DO-15 | 1000V | 1.5A | — | Fast | 500pcs | single | ||||||||
| 20158 | VISHAY | 145 шт |
6 грн.
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1.6 | DIP | GP-20 | 200V | 3.0A | — | Fast | 500pcs | single | ||||||||||
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Diode D2Zh
#13961
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26141 | СНГ | 145 шт |
3 грн.
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Diodes D2Zh germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the D2Zh diode: • Uopp max - Maximum direct reverse voltage: 150 V; • Inp max - Maximum forward current: 8 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 2 mA; • Iobr - Constant reverse current: no more than 250 µA at Uobr 150 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. | 0.7 | DIP | КД-4 | 150V | 8mA | — | Detector | 100 pieces. | single | ||||||||
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Diode 30BQ100TRPBF
#4325
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20296 | VISHAY | 135 шт |
6 грн.
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0.5 | SMD | DO-214AC, SMA | 100V | 3.0A | — | Schottky | 1000pcs | single | |||||||||
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Diode KD248D
#15467
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27706 | СНГ | 135 шт |
10 грн.
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The main technical characteristics of the KD248D diode: • Uopp max - Maximum direct reverse voltage: 600 V; • Inp max - Maximum forward current: 3 A; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1.4 V at Inp 3 A; • Iobr - Constant reverse current: no more than 40 μA at Uobr 600 V; • tvoc - Reverse recovery time: 0.25 µs. | 1 | DIP | — | 600V | 3.0A | — | Rectifier | 200pcs | single | ||||||||
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KDS111B, Diode assembly
#11414
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23531 | СНГ | 134 шт |
2.50 грн.
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Diode assembly, each consisting of two diodes connected with a common anode. | 0.3 | DIP | — | 300V | 200mA | — | Rectifier | 250pcs | double common anode | ||||||||
| 20149 | VISHAY | 132 шт |
8 грн.
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1.6 | DIP | DO-201AD | 800V | 3.0A | — | Fast | 200pcs | single | ||||||||||
| 22793 | СНГ | 130 шт |
15 грн.
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Pillars of silicon, diffusion diodes, rectifiers. Designed for use in high-voltage secondary power supply units with additional sealing. | 1.6 | DIP | — | 4kV | 50mA | — | High voltage | 100 pieces. | single | |||||||||
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Diode KD221A
#11432
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23550 | СНГ | 130 шт |
1 грн.
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Diodes KD221A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 50 kHz. | 0.3 | DIP | КД-5А | 100V | 700mA | — | Rectifier | 500pcs | single | ||||||||
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Diode SS510
#12761
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25117 | GALAXY ELECTRICAL | 128 шт |
3 грн.
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0.3 | SMD | DO-214AB | 100V | 5A | — | Schottky | 2000pcs | single | |||||||||
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Diode 1N5399
#1004
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20133 | MIC | 111 шт |
1 грн.
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Maximum DC reverse voltage, V1000 Maximum direct (rectified for a half-cycle) current, A1.5 HousingDO15 Operating temperature, С-65…150 | 0.4 | DIP | DO-15 | 1000V | 1A | — | Rectifier | 500pcs | single | ||||||||
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Diode D101A
#16152
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28393 | СНГ | 106 шт |
3 грн.
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Diodes D101A silicon, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. | 0.3 | DIP | D104 | 75V | 30mA | — | Rectifier | 100 pieces. | single | ||||||||
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Diode D226B
#8878
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25873 | СНГ | 100 шт |
5 грн.
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Diodes D226B silicon, alloy. The main technical characteristics of the diode D226B: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 300 V. | 1 | DIP | КД-8 | 400V | 300mA | — | Rectifier | 200pcs | single | ||||||||
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Diode D226D
#8879
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22960 | СНГ | 100 шт |
4 грн.
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The main technical characteristics of the diode D226D: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 100 V | 2 | DIP | КД-8 | 100V | 300mA | — | Rectifier | 200pcs | single | ||||||||
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Diode 1N4448WS-7-F
#16861
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29108 | DIOTEC SEMICONDUCTOR | 98 шт |
1.50 грн.
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0.1 | SMD | SOD123 | 75V | 250mA | — | Fast | 3000pcs | single | |||||||||
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Diode MUR4100ERLG
#17234
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29487 | ON SEMICONDUCTOR | 95 шт |
20 грн.
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1.1 | DIP | DO-201AD | 1000V | 4А | — | Fast | 1500pcs. | single | |||||||||
| 20160 | MIC | 93 шт |
10 грн.
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1.6 | DIP | DO-201AD | 600V | 2A | — | Fast | 250pcs | single | ||||||||||
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Diode bridge W10M
#10481
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22520 | SEP | 92 шт |
4 грн.
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0.9 | DIP | — | 1000V | 1A | — | Diode bridge | 250pcs | — | |||||||||
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Diode 2D202Zh (=KD202Zh)
#12225
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24604 | СНГ | 89 шт |
9 грн.
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The main technical characteristics of the diode 2D202Zh: • Uobr and max - Maximum impulse reverse voltage: 300 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 µA at Uobr 300 V. | 5 | Screw | КДЮ-11 | 210V | 5A | — | Rectifier | 100 pieces. | single | ||||||||
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Diode Bridge KBPC5010
#9022
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20572 | SEP | 86 шт |
40 грн.
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1000V;50A | 17.5 | DIP | — | 1000V | 50A | — | Diode bridge | 50pcs | — | ||||||||
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Diode KD503A
#12082
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24370 | СНГ | 81 шт |
2 грн.
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Designed for use as switching elements in high-speed impulse devices of the nanosecond range. Are issued in the glass case with flexible conclusions. | 0.25 | DIP | КД-121 | 30V | 20mA | — | Pulse | 100 pieces. | single | ||||||||
| 20155 | VISHAY | 78 шт |
6.80 грн.
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1.6 | DIP | DO-201AD | 400V | 3.0A | — | Fast | 500pcs | single | ||||||||||
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Diode KD411AM
#3414
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22961 | СНГ | 77 шт |
4 грн.
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Silicon diode, diffusion, high-speed. | 2 | DIP | КД-8 | 700V | 2A | — | Fast | 200pcs | single | ||||||||
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Diode 2D201V (=KD201V)
#12956
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25227 | СНГ | 77 шт |
30 грн.
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Diodes 2D201V silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. | 13 | Screw | КДЮ-11 | 200V | 5A | 15A | Rectifier | 40pcs | single | ||||||||
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Diode Bridge MB6S
#4656
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20066 | — | 69 шт |
2 грн.
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