Diodes, bridges

Results: 448

Filter layout: |
Filters
MPN Article Brand In stock Price Discounts Quantity Description Weight g. Mounting type Type of shell Urev. max, V Ipr. max. Ipr. imp. max. Diode type Factory packaging Diode design
22787 СНГ 69 шт
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Silicon, alloy. 0.3 DIP D104 150V 50mA — Rectifier 100 pieces. single
25904 СНГ 68 шт
8 грн.
50+7,20 грн.
200+6,40 грн.
500+5,60 грн.
Diodes KD202M silicon, diffusion. The main technical characteristics of the KD202M diode: • Uobr and max - Maximum impulse reverse voltage: 500 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 500 V 4.5 Screw КД-11 350V 5A — Rectifier 100 pieces. single
22967 СНГ 65 шт
25 грн.
50+22,50 грн.
200+20 грн.
500+17,50 грн.
Silicon diode, diffusion. 4 DIP КД-23 200V 10A — Rectifier 200pcs single
26108 СНГ 64 шт
10 грн.
Diode bridge 1.2A 400V 5.7 DIP — 400V 1.2A — Diode bridge 500pcs —
26158 СНГ 64 шт
16 грн.
Diode assemblies KD205BT, each consisting of two silicon diffusion diodes, with separate leads. Designed to convert alternating voltage with a frequency of up to 5 kHz in power supply units of radio-electronic equipment. The main technical characteristics of the KD205BT diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 500 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 500 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 400 V 5.7 DIP — 400V 500mA — Rectifier 100 pieces. assembly
24628 СНГ 59 шт
30 грн.
50+27 грн.
200+24 грн.
500+21 грн.
Main technical characteristics of the D242A diode: • Uobp max - Maximum constant reverse voltage: 100 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - Constant forward voltage: no more than 1 V at Inp 10 A; • Iobr - Continuous reverse current: no more than 3000 µA at Uobr 100 V. 13 Screw КДЮ-11 100V 10A — Rectifier 50pcs single
21443 SEP 54 шт
3 грн.
10+2,70 грн.
50+2,40 грн.
100+2,25 грн.
1 SMD — 1000V 1A — Rectifier 2000pcs —
28396 СНГ 53 шт
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Diodes D102 silicon, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. 0.3 DIP D104 50V 30mA — Rectifier 100 pieces. single
26572 СНГ 50 шт
45 грн.
Assembly of two single-phase diode bridges. Designed for rectifying alternating current with a frequency of up to 5 kHz. 11 DIP — 600V 1A — Diode bridge 100 pieces. —
20987 SANKEN 48 шт
34 грн.
100+30,60 грн.
200+27,20 грн.
500+23,80 грн.
2 diodes in series. 2.5 DIP TO-220F 1500V 5A — Damper 50pcs 2 diodes in series
20991 VISHAY 47 шт
46 грн.
100+41,40 грн.
200+36,80 грн.
500+32,20 грн.
Snubber diode 10A, 1500V, 135ns 2.5 DIP TO-220F 1500V 10A — Damper 50pcs single
26846 СНГ 47 шт
1 грн.
50+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Diodes KD208A silicon, diffusion, rectifier. Designed to convert alternating voltage with a frequency of up to 1.0 kHz. The main technical characteristics of the KD208A diode: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 1.5 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 100 µA at Uobr 100 V. 0.3 DIP — 100V 1.5A — Rectifier 1000pcs single
21002 INTERNATIONAL RECTIFIER 46 шт
27 грн.
100+24,30 грн.
200+21,60 грн.
500+18,90 грн.
1.8 DIP TO-220 80V 8A — Schottky 50pcs single
26307 СНГ 46 шт
7 грн.
The main technical characteristics of the KTs405D diode: • Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 µA at Uobr 200 V. 5.2 DIP — 200V 1A — Diode bridge 500pcs —
28395 СНГ 46 шт
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Diodes D102A silicon, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. 0.3 DIP D104 50V 30mA — Rectifier 100 pieces. single
20988 SANKEN 45 шт
22 грн.
100+19,80 грн.
200+17,60 грн.
500+15,40 грн.
2.5 DIP TO-220F 600V 6A — Fast 50pcs double common cathode
28384 СНГ 45 шт
30 грн.
50+27 грн.
200+24 грн.
500+21 грн.
The main technical characteristics of the diode D233B: • Uopp max - Maximum direct reverse voltage: 500 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1.5 V at Inp 5 A; • Iobr - Constant reverse current: no more than 3000 µA at Uobr 500 V. 11 Screw КДЮ-11 500V 5A — Rectifier 40pcs single
26577 СНГ 42 шт
7 грн.
The main technical characteristics of the KTs405Zh diode: • Uopp max - Maximum direct reverse voltage: 600 V; • Inp max - Maximum forward current: 600 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 600 mA; • Iobr - Constant reverse current: no more than 125 µA at Uobr 600 V. 5.2 DIP — 600V 600mA — Diode bridge 500pcs —
21637 SEP 41 шт
20 грн.
10+18 грн.
50+16 грн.
100+15 грн.
(1000V;10A) — — — — — — — — —
28445 СНГ 41 шт
1 грн.
50+0,90 грн.
200+0,80 грн.
500+0,70 грн.
The main technical characteristics of the KD521A diode: • Uopp max - Maximum direct reverse voltage: 75 V; • Inp max - Maximum forward current: 50 mA; • Unp - DC forward voltage: no more than 1 V at Inp 50 mA; • Iobr - Constant reverse current: no more than 1 μA at Uobr 75 V; • tvoc arr - Reverse recovery time: 0.004 µs; • Sd - Total capacitance: 4 pF. 0.2 DIP КД-2 75V 50mA 500mA Pulse 3000pcs —
29304 DIOTEC SEMICONDUCTOR 41 шт
13 грн.
10+11,70 грн.
50+10,40 грн.
100+9,75 грн.
Diode bridge 1000V, 4A. 3.7 SMD — 1000V 4А — — 200pcs —
29305 SEP 41 шт
12 грн.
10+10,80 грн.
50+9,60 грн.
100+9 грн.
Diode bridge 1000V, 6A. 3.7 SMD — 1000V 6A — — 200pcs —
22966 СНГ 40 шт
25 грн.
50+22,50 грн.
200+20 грн.
500+17,50 грн.
Silicon diode, diffusion. The main technical characteristics of the diode 2D213G: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1.2 V at Inp 10 A; • Iobr - Constant reverse current: no more than 200 µA at Uobr 100 V; • tvoc arr - Reverse recovery time: 0.3 µs; • Sd - Total capacitance: 550 pF at Uobr 100 V. 4 DIP КД-23 100V 10A — Rectifier 100 pieces. single
23860 СНГ 40 шт
12 грн.
50+10,80 грн.
200+9,60 грн.
500+8,40 грн.
A block of silicon, diffusion diodes connected according to a voltage doubler circuit. 75 DIP — 500V 400mA — Rectifier 20pcs assembly
20968 ST MICROELECTRONICS 39 шт
25 грн.
100+22,50 грн.
200+20 грн.
500+17,50 грн.
1.8 DIP TO-220 1500V 6A — Damper 50pcs 2 diodes in series
20964 FAIRCHILD SEMICONDUCTOR 38 шт
30 грн.
100+27 грн.
200+24 грн.
500+21 грн.
1.8 DIP TO-220 600V 8A — Fast 50pcs double common cathode
22749 SANKEN 38 шт
27 грн.
100+24,30 грн.
200+21,60 грн.
500+18,90 грн.
1.8 DIP TO-220F 200V 10A — Fast 50pcs single
20983 PHILIPS 37 шт
16 грн.
100+14,40 грн.
200+12,80 грн.
500+11,20 грн.
2.9 DIP TO-220F 600V 8A — Fast 50pcs single
20571 SEP 37 шт
16 грн.
10+14,40 грн.
50+12,80 грн.
100+12 грн.
1000V;8.0A 7 DIP — 1000V 8A — — 200pcs —
26136 СНГ 37 шт
10 грн.
Diode assemblies KD205DT, each consisting of two silicon diffusion diodes, with separate leads. Designed to convert alternating voltage with a frequency of up to 5 kHz in power supply units of radio-electronic equipment. The main technical characteristics of the KD205DT diode: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 500 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 500 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 100 V 5.7 DIP — 100V 500mA — Rectifier 100 pieces. assembly