Domestic zener diodes
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| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Mounting type | Power | Factory packaging | Stabilization voltage | Zener diode housing type |
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Zener diode KS191A2
#15979
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28213 | СНГ | 25981 шт |
1.50 грн.
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KC191A2 zener diodes are silicon, alloy, two-anode, low power. Designed to stabilize the nominal voltage of 9.1 V in the stabilization current range of 3 ... 15 mA and bilateral voltage limitation. general purpose equipment. | 0.12 | — | 150мВт | 3000pcs | 9V1 | kd2 | ||||||||
Zener diode D816G
#9779
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21349 | СНГ | 21557 шт |
6 грн.
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Medium power silicon zener diode, 39V The main technical parameters of the Zener diode D816G: • Stabilization voltage spread: 35... 43 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 12 Ohm; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 130 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 4.2 | Screw | 5Вт | 100 pieces. | 39V | ks620 | ||||||||
Zener diode KS518A
#9798
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21352 | СНГ | 19886 шт |
3 грн.
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Zener diodes KS518A silicon, planar, medium power. Designed to stabilize the rated voltage of 18 V in the stabilization current range of 1...45 mA. Are issued in the glass-to-metal case with flexible conclusions. The type of zener diode is given on the housing. The body of the zener diode in the operating mode serves as a positive electrode (anode). The mass of the zener diode is not more than 1 g. Specifications: aA0.336.002 TU. The main technical parameters of the KS518A zener diode: • Rated stabilization voltage: 18 V at Ist 5 mA; • Stabilization voltage spread: 16.2... 19.8 V; • Temperature coefficient of stabilization voltage: 0.1%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 200 Ohm at Ist 1 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 45 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С | 0.8 | DIP | 1Вт | 500pcs | 18V | kd-8 | ||||||||
Zener diode KS415A
#9759
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21278 | СНГ | 18565 шт |
2 грн.
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P=0.34W U=2.4V at Ist=20mA | 0.2 | DIP | 350мВт | 200pcs | 2V4 | kd-4 | ||||||||
Zener diode KS113A
#9780
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21350 | СНГ | 10434 шт |
2 грн.
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Zener diode low-voltage low power, 1.3V. | 0.7 | DIP | 180мВт | 100 pieces. | 1V3 | kd-8 | ||||||||
Zener diode KS413B
#9797
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21368 | СНГ | 6576 шт |
1 грн.
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Zener diode KS413B silicon diffusion-planar, designed to stabilize and limit the voltage. Climatic version - B, placement category - 3 Case type: KD-2 The mass of devices is not more than 0.15 g. Specifications: aA0.336.773 TU. The main technical parameters of the KS413B zener diode: • Rated stabilization voltage: 4.3 V; • Stabilization voltage spread: 4.1... 4.5 V; • Temperature coefficient of stabilization voltage: +0.01, -0.05%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 18 Ohm at Ist 20 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 70 mA; • Maximum allowable power dissipation on the zener diode: 0.34 W; • Ambient temperature operating range: -60... +125 °С | 0.2 | DIP | 340мВт | 200pcs | 4V3 | DO-35 | ||||||||
Zener diode D817V
#14013
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26192 | СНГ | 4988 шт |
6 грн.
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Medium power silicon zener diode, 82V. The main technical parameters of the Zener diode D817V: • Stabilization voltage spread: 74... 90 V at Ist 50 mA; • Temperature coefficient of stabilization voltage: 0.14%/°С; • Temporary stabilization voltage instability: ± 6%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 45 Ohm; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 60 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 4.2 | Screw | 5Вт | 100 pieces. | 82V | ks620 | ||||||||
Zener diode KS139A stack.
#11424
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23541 | СНГ | 3705 шт |
2 грн.
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Silicon zener diode, diffusion-alloy, low power. | 0.2 | DIP | 300мВт | 500pcs | 3V9 | kd-4 | ||||||||
Zener diode D815A1
#9875
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21654 | СНГ | 3658 шт |
6 грн.
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— | 4.2 | Screw | 8Вт | 100 pieces. | 6V2 | ks620 | ||||||||
Zener diode KS175A2
#11422
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23539 | СНГ | 3432 шт |
1.50 грн.
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— | 0.2 | DIP | 150мВт | 200pcs | 7V5 | kd2 | ||||||||
Zener diode KS531V1
#14486
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26698 | СНГ | 2850 шт |
3 грн.
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Zener diodes KS531V1 silicon, diffusion-alloy, medium power. Designed for use as 31.0 V reference voltage sources. The main technical parameters of the KS531V1 zener diode: • Rated stabilization voltage: 31 V at Ist 5 mA; • Temperature coefficient of stabilization voltage: ±0.005%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1%; • Zener diode differential resistance: 90 Ohm at Ist 5 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 15 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -50... +100 °С. | 0.3 | DIP | 500мВт | 1000pcs | 31V | TO-92-2 | ||||||||
Zener diode D815E
#11452
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23582 | СНГ | 2366 шт |
6 грн.
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Zener diodes D815E silicon, diffusion-alloy, average power 15V. The main technical parameters of the Zener diode D815E: • Stabilization voltage spread: 13.3... 16.4 V at Ist 500 mA; • Temperature coefficient of stabilization voltage: 0.1%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 2.5 Ohm; • Minimum allowable stabilization current: 25 mA; • Maximum allowable stabilization current: 550 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С | 4.2 | Screw | 8Вт | 100 pieces. | 15V | ks620 | ||||||||
Zener diode KS650A
#11185
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23308 | СНГ | 2157 шт |
8 грн.
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Zener diodes KS650A silicon, diffusion-alloy, medium power. Designed to stabilize the rated voltage of 150 V in the stabilization current range of 2.5...33 mA. The main technical parameters of the KS650A zener diode: • Rated stabilization voltage: 150 V at Ist 25 mA; • Stabilization voltage spread: 135... 165 V; • Temperature coefficient of stabilization voltage: ±0.2%/°С; • Zener diode differential resistance: 270 Ohm at Ist 25 mA; • The minimum allowable stabilization current: 2.5 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable power dissipation on the zener diode: 5 watts. | 1.5 | Screw | 5Вт | 100 pieces. | 150V | ks620 | ||||||||
Zener diode KS211Zh
#10377
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22384 | СНГ | 2116 шт |
1.50 грн.
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Silicon zener diode, planar, low power. | 0.1 | DIP | 125мВт | 400pcs | 11V | kd2 | ||||||||
Zener diode D816V
#11969
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24258 | СНГ | 1909 шт |
6 грн.
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Medium power silicon zener diode, 33V The main technical parameters of the Zener diode D816V: • Stabilization voltage spread: 29.5... 36 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 10 Ohm; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 150 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 2.5 | Screw | 5Вт | 100 pieces. | 33V | ks620 | ||||||||
Zener diode D814G
#13704
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25867 | СНГ | 1781 шт |
3 грн.
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Zener diodes D814G silicon, alloy, medium power. Designed to stabilize the voltage of 10.0-12.0 V in the stabilization current range of 3...29 mA. Are issued in the glass-to-metal case with flexible conclusions. The type of zener diode is given on the housing. | 0.8 | DIP | 340мВт | 200pcs | 11V | — | ||||||||
Zener diode KS139A
#13705
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25868 | СНГ | 1692 шт |
3 грн.
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Zener diode KS139A - alloy, silicon, low power. The main purpose is voltage stabilization from 3.51 to 4.29 V. It has a stabilization current range from 3 to 70 mA. | 0.8 | DIP | 300мВт | 100 pieces. | 3V9 | kd-8 | ||||||||
Zener diode KS210Zh
#13739
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25907 | СНГ | 1670 шт |
1 грн.
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Zener diodes KS210Zh silicon, planar, low power. Designed to stabilize the nominal voltage of 10 V in the stabilization current range of 0.5 ... 13 mA in measuring equipment, in amplifiers for level matching, in automation systems for supplying low-power sensors, as well as to stabilize the pulse voltage and limit pulse signals. Available in metal-glass cases with flexible leads. The main technical parameters of the KS210Zh zener diode: • Rated stabilization voltage: 10 V at Ist 4 mA; • Stabilization voltage spread: 9... 11 V; • Temperature coefficient of stabilization voltage: 0.09%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 40 Ohm at Ist 4 mA; • Minimum allowable stabilization current: 0.5 mA; • Maximum allowable stabilization current: 13 mA; • Maximum allowable power dissipation on the zener diode: 0.125 W; • Ambient temperature operating range: -60... +125 °С | 0.2 | DIP | 125мВт | 1000pcs | 10V | КД-3. | ||||||||
Zener diode KS168A stack.
#11417
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23534 | СНГ | 1464 шт |
2 грн.
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Zener diodes KS168A silicon, alloy, low power. Designed to stabilize the nominal voltage of 6.8 V in the stabilization current range of 3...45 mA. | 0.2 | DIP | 300мВт | 1000pcs | 6V8 | kd-4 | ||||||||
Zener diode D817G
#11964
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24253 | СНГ | 1282 шт |
6 грн.
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Medium power silicon zener diode, 100V The main technical parameters of the Zener diode D817G: • Stabilization voltage spread: 90... 110 V at Ist 50 mA; • Temperature coefficient of stabilization voltage: 0.14%/°С; • Temporary stabilization voltage instability: ± 6%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 50 Ohm; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 50 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Working range of ambient temperature: -60... +120 °С. | 3.5 | Screw | 5Вт | 100 pieces. | 100V | ks620 | ||||||||
Zener diode KS182A
#13940
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26119 | СНГ | 1261 шт |
3 грн.
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Zener diodes KS182A silicon, alloy, two-anode, low power. Designed to stabilize the nominal voltage of 8.2 V in the stabilization current range of 3...17 mA and to limit the voltage on both sides. The main technical parameters of the KS182A zener diode: • Rated stabilization voltage: 8.2 V at Ist 5 mA; • Temperature coefficient of stabilization voltage: ±0.05%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 14 Ohm at Ist 5 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 17 mA; • Maximum allowable power dissipation on the zener diode: 0.15 W; • Working range of ambient temperature: -55... +100 °С. | 0.3 | DIP | 150мВт | 200pcs | 8V2 | — | ||||||||
Zener diode KS168V
#15468
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27707 | СНГ | 1001 шт |
4 грн.
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The main technical parameters of the KS168V zener diode: • Rated stabilization voltage: 6.8 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: ±0.05%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 28 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 20 mA; • Maximum allowable power dissipation on the zener diode: 0.15 W; • Working range of ambient temperature: -55... +100 °С. | 0.4 | DIP | 150мВт | 1000pcs | 6V8 | kd25 | ||||||||
Zener diode D816D
#11970
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24259 | СНГ | 930 шт |
6 грн.
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Medium power silicon zener diode, 47V The main technical parameters of the Zener diode D816D: • Stabilization voltage spread: 42.5... 51.5 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 15 Ohm; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 110 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 4.2 | Screw | 5Вт | 100 pieces. | 47V | ks620 | ||||||||
Zener diode KS407A
#14482
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26694 | СНГ | 927 шт |
2 грн.
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Zener diodes KS407A silicon, planar, medium power. Designed to stabilize the nominal voltage of 3.3 V in the stabilization current range of 1...100 mA. The main technical parameters of the KS407A zener diode: • Rated stabilization voltage: 3.3 V at Ist 20 mA; • Stabilization voltage spread: 3.1... 3.5 V; • Zener diode differential resistance: 28 Ohm at Ist 20 mA; • Minimum allowable stabilization current: 1 mA; • The maximum allowable stabilization current: 100 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -40... +85 °С. | 0.2 | DIP | 500мВт | 400pcs | 3V3 | kd2 | ||||||||
Zener diode KS139G
#10379
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22386 | СНГ | 796 шт |
3 грн.
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Silicon zener diode, diffusion-alloy, low power. | 0.2 | DIP | 125мВт | 1000pcs | 3V9 | kd-4 | ||||||||
Zener diode KS508A
#14481
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26693 | СНГ | 771 шт |
2 грн.
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Zener diodes KS508A silicon, planar, medium power. Designed to stabilize the nominal voltage of 12.0 V in the stabilization current range of 0.25...23.0 mA. The main technical parameters of the KS508A zener diode: • Rated stabilization voltage: 12 V at Ist 10.5 mA; • Temperature coefficient of stabilization voltage: ±0.11%/°С; • Minimum allowable stabilization current: 0.25 mA; • Maximum allowable stabilization current: 23 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -60... +85 °С. | 0.2 | DIP | 500мВт | 400pcs | 12V | kd2 | ||||||||
Zener diode D814V
#13944
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26123 | СНГ | 641 шт |
3 грн.
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Zener diodes D814V silicon, alloy, medium power. Designed to stabilize the voltage of 9.0-10.5 V in the stabilization current range of 3...32 mA. | 0.8 | DIP | 340мВт | 500pcs | 10V | kd-8 | ||||||||
Zener diode KS224Zh
#10099
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21837 | СНГ | 618 шт |
2.50 грн.
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Zener diode R=0.125W U=24V at Ist=2mA | 0.2 | DIP | 125мВт | 1000pcs | 24V | kd2 | ||||||||
Zener diode D816B
#11968
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24257 | СНГ | 617 шт |
6 грн.
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Medium power silicon zener diode, 27V The main technical parameters of the Zener diode D816B: • Stabilization voltage spread: 24.2... 29.5 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 8 ohms; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 180 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 2.5 | Screw | 5Вт | 100 pieces. | 27V | ks620 | ||||||||
Zener diode D815B
#14018
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26197 | СНГ | 579 шт |
6 грн.
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Medium power silicon zener diode, 6.8V The main technical parameters of the Zener diode D815B: • Stabilization voltage spread: 6.1... 7.5 V at Ist 1 A; • Temperature coefficient of stabilization voltage: 0.05%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 0.8 Ohm; • Minimum allowable stabilization current: 50 mA; • Maximum allowable stabilization current: 1.15 A; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С | 2.5 | Screw | 8Вт | 100 pieces. | 6V8 | ks620 |