Domestic zener diodes
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| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Mounting type | Power | Factory packaging | Stabilization voltage | Zener diode housing type |
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Zener diode D815Zh
#14014
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26193 | СНГ | 568 шт |
7 грн.
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Medium power silicon zener diode, 180V The main technical parameters of the D815Zh zener diode: • Stabilization voltage spread: 16.2... 19.8 V at Ist 500 mA; • Temperature coefficient of stabilization voltage: 0.11%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 3 Ohm; • Minimum allowable stabilization current: 25 mA; • Maximum allowable stabilization current: 450 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С | 2.5 | Screw | 8Вт | 100 pieces. | 18V | ks620 | ||||||||
Zener diode D817A
#11962
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24251 | СНГ | 565 шт |
6 грн.
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Medium power silicon zener diode, 56V The main technical parameters of the Zener diode D817A: • Stabilization voltage spread: 50.5... 61.5 V at Ist 50 mA; • Temperature coefficient of stabilization voltage: 0.14%/°С; • Temporary stabilization voltage instability: ± 6%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 35 Ohm; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 90 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 3.5 | Screw | 5Вт | 100 pieces. | 56V | ks620 | ||||||||
Zener diode KS433A
#11425
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23542 | СНГ | 561 шт |
4 грн.
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Zener diodes KS433A silicon, diffusion-alloy, medium power. Designed to stabilize the nominal voltage of 3.3 V in the stabilization current range of 3...191 mA. The main technical parameters of the KS433A zener diode: • Rated stabilization voltage: 3.3 V at Ist 30 mA; • Stabilization voltage spread: 2.97... 3.63 V; • Temperature coefficient of stabilization voltage: -0.1%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 25 Ohm at Ist 30 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 191 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С | 0.7 | DIP | 1Вт | 500pcs | 3V3 | kd-8 | ||||||||
Zener diode D815D
#13776
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25955 | СНГ | 525 шт |
7 грн.
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Medium power silicon zener diode, 12V The main technical parameters of the Zener diode D815D: • Stabilization voltage spread: 10.8... 13.3 V at Ist 500 mA; • Temperature coefficient of stabilization voltage: 0.09%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 2 Ohm; • Minimum allowable stabilization current: 25 mA; • Maximum allowable stabilization current: 650 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Working range of ambient temperature: -60... +125 °С. | 4.2 | Screw | 8Вт | 100 pieces. | 12V | ks620 | ||||||||
| 26195 | СНГ | 490 шт |
8 грн.
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Medium power silicon zener diode, 27V The main technical parameters of the Zener diode D816B: • Stabilization voltage spread: 24.2... 29.5 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 8 ohms; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 180 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 2.5 | Screw | 5Вт | 100 pieces. | 27V | ks620 | |||||||||
Zener diode D818A
#13964
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26144 | СНГ | 487 шт |
3 грн.
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The main technical parameters of the Zener diode D818A: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 9... 11 V; • Temperature coefficient of stabilization voltage: 0... +0.023%/°С; • Temporary instability of stabilization voltage: ± 0.11%; • Zener diode differential resistance: 70 Ohm at Ist 3 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Ambient temperature operating range: -60... +125 °С | 0.8 | DIP | 300мВт | 200pcs | 9V | kd-8 | ||||||||
Zener diode KS210B
#3415
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24465 | СНГ | 430 шт |
3 грн.
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Dissipation power, W 0.15 Rated stabilization voltage, V 10 Static resistance Rst., Ohm 22 Hole mounting method Minimum stabilization voltage, V 9.3 Maximum stabilization voltage, V 11 Temperature coefficient of stabilization voltage aUst.,% /С 0.07 Temporary instability of stabilization voltage dUst., V 1.5 Minimum stabilization current Ist.min., mA 3 Maximum stabilization current Ist.max., mA 14 Operating temperature, С -60...125 | 0.3 | DIP | 150мВт | 100 pieces. | 10V | kd25 | ||||||||
| 26191 | СНГ | 392 шт |
8 грн.
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Medium power silicon zener diode, 82V. The main technical parameters of the Zener diode D817V: • Stabilization voltage spread: 74... 90 V at Ist 50 mA; • Temperature coefficient of stabilization voltage: 0.14%/°С; • Temporary stabilization voltage instability: ± 6%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 45 Ohm; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 60 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 4.2 | Screw | 5Вт | 100 pieces. | 82V | ks620 | |||||||||
Zener diode KS407D
#10375
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22382 | СНГ | 387 шт |
2 грн.
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Silicon zener diode, planar, medium power. | 0.1 | DIP | 340мВт | 400pcs | 6V8 | kd2 | ||||||||
Zener diode D816A
#11967
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24256 | СНГ | 346 шт |
6 грн.
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Medium power silicon zener diode, 22V | 4.2 | Screw | 5Вт | 100 pieces. | 22V | ks620 | ||||||||
Zener diode KS126D1
#11427
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23544 | СНГ | 335 шт |
1 грн.
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Zener diode 5.1V 0.45W. | 0.2 | DIP | 450мВт | 500pcs | 5V1 | kd2 | ||||||||
Zener diode D815A
#14020
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26199 | СНГ | 321 шт |
8 грн.
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Medium power silicon zener diode, 5.6V The main technical parameters of the Zener diode D815A: • Stabilization voltage spread: 5... 6.2 V at Ist 1 A; • Temperature coefficient of stabilization voltage: 0.045%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 0.6 Ohm; • Minimum allowable stabilization current: 50 mA; • Maximum allowable stabilization current: 1.4 A; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С | 2.5 | Screw | 8Вт | 100 pieces. | 5V6 | ks620 | ||||||||
| 26194 | СНГ | 283 шт |
8 грн.
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Medium power silicon zener diode, 33V The main technical parameters of the Zener diode D816V: • Stabilization voltage spread: 29.5... 36 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 10 Ohm; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 150 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 2.5 | Screw | 5Вт | 100 pieces. | 33V | ks620 | |||||||||
Zener diode KS533A
#11421
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23538 | СНГ | 211 шт |
6 грн.
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The main technical parameters of the KS533A zener diode: • Rated stabilization voltage: 33 V at Ist 10 mA; • Stabilization voltage spread: 29.7... 36.3 V; • Temperature coefficient of stabilization voltage: ±0.1%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 100 Ohm at Ist 3 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 17 mA; • Maximum allowable power dissipation on the zener diode: 0.64 W; • Working range of ambient temperature: -40... +125 °С. | 0.4 | DIP | 640мВт | 200pcs | 33V | — | ||||||||
Zener diode KS447A
#13967
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26147 | СНГ | 205 шт |
5 грн.
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The main technical parameters of the KS447A zener diode: • Rated stabilization voltage: 4.7 V at Ist 43 mA; • Stabilization voltage spread: 4.23... 5.17 V; • Temperature coefficient of stabilization voltage: -0.08...+0.03%/°C; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 18 Ohm at Ist 30 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 159 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С | 0.8 | DIP | 1Вт | 200pcs | 4V7 | kd-8 | ||||||||
Zener diode 2S482A (=KS482A)
#15531
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27770 | СНГ | 198 шт |
6 грн.
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Main technical parameters of the zener diode 2S482А: • Rated stabilization voltage: 8.2 V at Ist 5 mA; • Stabilization voltage spread: 7.4... 9 V; • Temperature coefficient of stabilization voltage: 0.08 %/°C; • Zener diode stabilization voltage temporary instability: ±1.5%; • Zener diode differential resistance: 200 Ohm at Ist 1 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 96 mA; • Maximum allowable power dissipation on the zener diode: 1 W; • Working range of ambient temperature: -60... +125 °С. | 0.5 | DIP | 1Вт | 200pcs | 8V2 | kd-8 | ||||||||
| 26198 | СНГ | 178 шт |
8 грн.
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Medium power silicon zener diode, 6.8V The main technical parameters of the Zener diode D815B: • Stabilization voltage spread: 6.1... 7.5 V at Ist 1 A; • Temperature coefficient of stabilization voltage: 0.05%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 0.8 Ohm; • Minimum allowable stabilization current: 50 mA; • Maximum allowable stabilization current: 1.15 A; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С | 2.5 | Screw | 8Вт | 100 pieces. | 6V8 | ks620 | |||||||||
Zener diode KS482A
#3400
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23310 | СНГ | 172 шт |
3 грн.
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Dissipation power, W 1 Minimum stabilization voltage, V 7.4 Rated stabilization voltage, V 8.2 Maximum stabilization voltage, V 9 Static resistance Rst., Ohm 25 at current I st, mA 5 Temperature coefficient of stabilization voltage aUst.,% /С 0.08 Temporary instability of stabilization voltage dUst., V 1.5 Minimum stabilization current Ist.min., mA 1 Maximum stabilization current Ist.max., mA 96 Operating temperature, С -60…125 Hole mounting method Housing kd-8 | 0.5 | DIP | 1Вт | 100 pieces. | 8V2 | kd-8 | ||||||||
Zener diode D818V
#12245
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24627 | СНГ | 126 шт |
4 грн.
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The main technical parameters of the Zener diode D818V: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 7.6... 10 V; • Temperature coefficient of stabilization voltage: +0.010%/°С; • Temporary stabilization voltage instability: ± 0.12%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | DIP | 300мВт | 100 pieces. | 9V | kd-8 | ||||||||
Zener diode KS222Zh
#10378
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22385 | СНГ | 123 шт |
3 грн.
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Silicon zener diode, planar, low power. | 0.2 | DIP | 125мВт | 100 pieces. | 22V | kd2 | ||||||||
Zener diode KS409A
#10108
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21847 | СНГ | 82 шт |
4 грн.
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Silicon zener diode, plenary, medium power. Designed to stabilize the nominal voltage of 5.6 V in the stabilization current range of 1...48 mA. | 0.2 | DIP | 340мВт | 200pcs | 5V6 | kd2 | ||||||||
Zener diode D815V
#14017
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26196 | СНГ | 81 шт |
6 грн.
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Medium power silicon zener diode, 8.2V The main technical parameters of the Zener diode D815V: • Stabilization voltage spread: 7.4... 9.1 V at Ist 1 A; • Temperature coefficient of stabilization voltage: 0.07%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 1 ohm; • Minimum allowable stabilization current: 50 mA; • Maximum allowable stabilization current: 950 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С | 2.5 | Screw | 8Вт | 100 pieces. | 8V2 | ks620 | ||||||||
Zener diode KS182Ts stack.
#11423
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23540 | СНГ | 75 шт |
3.80 грн.
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— | 0.2 | DIP | 125мВт | 500pcs | 8V2 | kd2 | ||||||||
Zener diode KS515G
#14114
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26292 | СНГ | 61 шт |
7 грн.
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Zener diodes KS515G silicon, diffusion-alloy, medium power, precision. Designed to stabilize the nominal voltage of 15 V in the stabilization current range of 3 to 31 mA with high requirements for voltage stability in the temperature range of -60...+100 °C. The main technical parameters of the KS515G zener diode: • Rated stabilization voltage: 15 V at Ist 10 mA; • Stabilization voltage spread: 14.25... 15.75 V; • Temperature coefficient of stabilization voltage: 0.005%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 25 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 31 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -60... +100 °С. | 0.6 | DIP | 500мВт | 50pcs | 15V | — | ||||||||
Zener diode KS456A
#13965
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26145 | СНГ | 56 шт |
8 грн.
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Zener diodes KS456A silicon, diffusion-alloy, medium power. Designed to stabilize the nominal voltage of 5.6 V in the stabilization current range of 3...139 mA. The main technical parameters of the KS456A zener diode: • Rated stabilization voltage: 5.6 V at Ist 36 mA; • Stabilization voltage spread: 5.04... 6.16 V; • Temperature coefficient of stabilization voltage: 0...0.05%/°С; • Zener diode differential resistance: 10 Ohm at Ist 30 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 139 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С | 0.8 | DIP | 1Вт | 200pcs | 5V6 | kd-8 | ||||||||
Zener diode KS170A
#13937
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26116 | СНГ | 49 шт |
3 грн.
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Zener diodes KS170A silicon, alloy, two-anode, low power. Designed for use as a reference element in voltage stabilization circuits. The main technical parameters of the KS170A zener diode: • Rated stabilization voltage: 7 V at Ist 10 mA; • Stabilization voltage spread: 6.43... 7.59 V; • Temperature coefficient of stabilization voltage: ±0.01%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 20 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 20 mA; • Maximum allowable power dissipation on the zener diode: 0.15 W; • Working range of ambient temperature: -55... +100 °С. | 0.3 | DIP | 150мВт | 200pcs | 7V0 | — | ||||||||
Zener diode KS531V
#14124
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26305 | СНГ | 49 шт |
6 грн.
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Zener diodes KS531V silicon, diffusion-alloy, medium power, precision. Designed to stabilize the nominal voltage of 31 V in the stabilization current range of 3 to 15 mA with high requirements for voltage stability in the temperature range of -60...+100 °C. The main technical parameters of the KS531V zener diode: • Rated stabilization voltage: 31 V at Ist 10 mA; • Stabilization voltage spread: 29.45... 32.55 V; • Temperature coefficient of stabilization voltage: ±0.005%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 50 Ohm at Ist10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 15 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -60... +100 °С. | 0.5 | DIP | 500мВт | 50pcs | 31V | — | ||||||||
Zener diode KS510A
#16629
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28867 | СНГ | 39 шт |
6 грн.
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Zener diodes KS510A are silicon, planar, medium power. Designed to stabilize a rated voltage of 10 V in the stabilization current range of 1...79 mA. | 0.8 | DIP | 1Вт | 100 pieces. | 10V | kd-8 | ||||||||
Zener diode 2S600A (=KS600A)
#11401
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23512 | СНГ | 15 шт |
11 грн.
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Zener diodes 2S600A silicon, planar, medium power. Designed to stabilize the rated voltage of 100 V in the stabilization current range of 1...8.1 mA. | 0.8 | DIP | 1Вт | 100 pieces. | 100V | kd-8 | ||||||||
| 26200 | СНГ | 8 шт |
8 грн.
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Medium power silicon zener diode, 56V The main technical parameters of the Zener diode D817A: • Stabilization voltage spread: 50.5... 61.5 V at Ist 50 mA; • Temperature coefficient of stabilization voltage: 0.14%/°С; • Temporary stabilization voltage instability: ± 6%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 35 Ohm; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 90 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 3.5 | Screw | 5Вт | 100 pieces. | 56V | ks620 |
