Domestic zener diodes

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26118 СНГ
3 грн.
50+2,70 грн.
100+2,40 грн.
250+2,25 грн.
Zener diodes KS191A silicon, alloy, two-anode, low power. Designed to stabilize the nominal voltage of 9.1 V in the stabilization current range of 3...15 mA and to limit the voltage on both sides. The main technical parameters of the KS191A zener diode: • Rated stabilization voltage: 9.1 V at Ist 5 mA; • Temperature coefficient of stabilization voltage: ±0.06%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 18 Ohm at Ist 5 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 15 mA; • Maximum allowable power dissipation on the zener diode: 0.15 W; • Working range of ambient temperature: -55... +100 °С. 0.3 DIP 150мВт 200pcs 9V1
26120 СНГ
40 грн.
50+36 грн.
100+32 грн.
250+30 грн.
Zener diodes KS191F silicon, epitaxial, low power, precision, class 0.02. Designed to stabilize the nominal voltage of 9.1 V in the stabilization current range of 3...20 mA with high requirements for voltage stability in the temperature range of -60...+100 °C in digital measuring instruments and other precision equipment. The main technical parameters of the KS191F zener diode: • Rated stabilization voltage: 9.1 V at Ist 10 mA; • Stabilization voltage spread: 8.65... 9.55 V; • Temperature coefficient of stabilization voltage: ±0.0005%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±0.02%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 20 mA; • Maximum allowable power dissipation on the zener diode: 0.2 W; • Working range of ambient temperature: -60... +100 °С. 0.7 DIP 200мВт 100 pieces. 9V1 kd-8
26121 СНГ
12 грн.
50+10,80 грн.
100+9,60 грн.
250+9 грн.
Stabistors KS119A silicon, diffusion-alloy, low power. Designed for use in voltage stabilizers and as thermal compensating elements. The main technical parameters of the stabistor KS119A: • Rated stabilization voltage: 1.9 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: -0.4%/°С; • Differential resistance: 15 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 1 mA; • The maximum allowable stabilization current: 100 mA; • Maximum allowable power dissipation: 0.18 W; • Working range of ambient temperature: -60... +125 °С. 0.8 DIP 180мВт 100 pieces. 1V9 kd-8
26122 СНГ
3 грн.
50+2,70 грн.
100+2,40 грн.
250+2,25 грн.
Zener diodes KS168A silicon, alloy, low power. Designed to stabilize the nominal voltage of 6.8 V in the stabilization current range of 3...45 mA. The main technical parameters of the KS168A zener diode: • Rated stabilization voltage: 6.8 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: ±0.06%/°С; • Constant forward voltage: 1 V at Ipr 50 mA; • Zener diode differential resistance: 28 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 45 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. 0.8 DIP 300мВт 100 pieces. 6V8 kd-8
26124 СНГ
12 грн.
50+10,80 грн.
100+9,60 грн.
250+9 грн.
Zener diodes D818G silicon, diffusion-alloy, low power, precision. Designed to stabilize the nominal voltage of 9 V in the stabilization current range of 3...33 mA with high requirements for voltage stability in the temperature range of -60...+125 °C. The main technical parameters of the Zener diode D818G: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 7.6... 10 V; • Temperature coefficient of stabilization voltage: +0.006%/°С; • Temporary stabilization voltage instability: ± 0.12%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. 0.8 DIP 300мВт 100 pieces. 9V kd-8
26125 СНГ
3 грн.
50+2,70 грн.
100+2,40 грн.
250+2,25 грн.
Zener diodes D814B silicon, alloy, medium power. Designed to stabilize the voltage of 8.0-9.5 V in the stabilization current range of 3...36 mA. 0.8 DIP 340мВт 100 pieces. 9V kd-8
26126 СНГ
10 грн.
50+9 грн.
100+8 грн.
250+7,50 грн.
Zener diodes 2S530A silicon, planar, medium power. Designed to stabilize the rated voltage of 30 V in the stabilization current range of 1...27 mA. The main technical parameters of the zener diode 2S530A: • Rated stabilization voltage: 30 V at Ist 5 mA; • Stabilization voltage spread: 28.5... 31.5 V; • Temperature coefficient of stabilization voltage: ±0.1%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 200 Ohm at Ist 1 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 27 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Working range of ambient temperature: -60... +125 °С. 0.8 DIP 1Вт 100 pieces. 30V kd-8
26143 СНГ
4 грн.
50+3,60 грн.
100+3,20 грн.
250+3 грн.
The main technical parameters of the KS133A zener diode: • Rated stabilization voltage: 3.3 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: -0.11%/°С; • Constant forward voltage: 1 V at Ipr 50 mA; • Zener diode differential resistance: 65 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 81 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Ambient temperature operating range: -60... +125 °С 0.8 DIP 300мВт 100 pieces. 3V3 kd-8
26146 СНГ
15 грн.
50+13,50 грн.
100+12 грн.
250+11,25 грн.
The main technical parameters of the KS515A zener diode: • Rated stabilization voltage: 15 V at Ist 5 mA; • Stabilization voltage spread: 13.5... 16.5 V; • Temperature coefficient of stabilization voltage: 0.1%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 200 Ohm at Ist 1 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 53 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С 0.8 DIP 1Вт 200pcs 15V kd-8
26291 СНГ
8 грн.
50+7,20 грн.
100+6,40 грн.
250+6 грн.
Zener diodes KS213B silicon, alloy, two-anode, low power. Designed to stabilize the nominal voltage of 13 V in the stabilization current range of 3...10 mA and to limit the voltage on both sides. The main technical parameters of the KS213B zener diode: • Rated stabilization voltage: 13 V at Ist 5 mA; • Temperature coefficient of stabilization voltage: 0.08%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 25 Ohm at Ist 5 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 10 mA; • The maximum allowable power dissipation on the zener diode: 0.15 W. 0.3 DIP 150мВт 200pcs 13V
26456 СНГ
4 грн.
50+3,60 грн.
100+3,20 грн.
250+3 грн.
Stabistors D220S silicon, microalloy, low power. Are intended for stabilization of direct and impulse voltage and limitation of voltage impulses. The main technical parameters of the D220S stabistor: • Rated stabilization voltage at Ist 1 mA: 0.59 V; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 50 mA; • Working range of ambient temperature: -60... +120 °С. 0.4 DIP 100 pieces. 0.59V
27723 СНГ
10 грн.
50+9 грн.
100+8 грн.
250+7,50 грн.
The main technical parameters of the KS620A zener diode: • Rated stabilization voltage: 120 V at Ist 50 mA; • Stabilization voltage spread: 103... 132 V; • Temperature coefficient of stabilization voltage: ±0.2%/°С; • Zener diode differential resistance: 150 Ohm at Ist 50 mA; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 42 mA; • Maximum allowable power dissipation on the zener diode: 5 watts. 1.5 Screw 5Вт 100 pieces. 120V ks620
28450 СНГ
14 грн.
50+12,60 грн.
100+11,20 грн.
250+10,50 грн.
Zener diodes KS191S silicon, epitaxial, low power, precision, class 0.02. Designed to stabilize the nominal voltage of 9.1 V in the stabilization current range of 3...20 mA with high requirements for voltage stability. The main technical parameters of the KS191S zener diode: • Rated stabilization voltage: 9.1 V at Ist 10 mA; • Stabilization voltage spread: 8.65... 9.55 V; • Temperature coefficient of stabilization voltage: ±0.005%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±0.02%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 20 mA; • The maximum allowable power dissipation on the zener diode: 0.2 W. 0.8 DIP 200мВт 100 pieces. 9V1 kd-8
28776 СНГ
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Main technical parameters of stabistor 2S113A: • Rated stabilization voltage: 1.3 V at Ist 10 mA; • Stabilization voltage spread: 1.17... 1.43 V; • Temperature coefficient of stabilization voltage: -0.42...-0.2%/°C; • Temporary instability of stabilization voltage: ±3.5%; • Differential resistance: 15 Ohm at Ist 7.5 mA; • Maximum permissible stabilization current: 100 mA; • Maximum permissible power dissipation: 0.16 W; • Operating range of ambient temperature: -60... +125 °C. 0.8 DIP 160 мВт 100 pieces. 1V3 kd-8
28777 СНГ
12 грн.
50+10,80 грн.
100+9,60 грн.
250+9 грн.
Main technical parameters of the zener diode 2S107A: • Rated stabilization voltage: 0.7 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: -0.34%/°C; • Minimum permissible stabilization current: 1 mA; • Maximum permissible stabilization current: 120 mA; • Operating range of ambient temperature: -60... +125 °C. 0.8 DIP 300мВт 100 pieces. 1V3 kd-8