Domestic zener diodes
Filter layout:
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| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Mounting type | Power | Factory packaging | Stabilization voltage | Zener diode housing type |
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Zener diode KS191A
#13939
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26118 | СНГ | — |
3 грн.
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— | Zener diodes KS191A silicon, alloy, two-anode, low power. Designed to stabilize the nominal voltage of 9.1 V in the stabilization current range of 3...15 mA and to limit the voltage on both sides. The main technical parameters of the KS191A zener diode: • Rated stabilization voltage: 9.1 V at Ist 5 mA; • Temperature coefficient of stabilization voltage: ±0.06%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 18 Ohm at Ist 5 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 15 mA; • Maximum allowable power dissipation on the zener diode: 0.15 W; • Working range of ambient temperature: -55... +100 °С. | 0.3 | DIP | 150мВт | 200pcs | 9V1 | — | |||||||
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Zener diode KS191F
#13941
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26120 | СНГ | — |
40 грн.
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— | Zener diodes KS191F silicon, epitaxial, low power, precision, class 0.02. Designed to stabilize the nominal voltage of 9.1 V in the stabilization current range of 3...20 mA with high requirements for voltage stability in the temperature range of -60...+100 °C in digital measuring instruments and other precision equipment. The main technical parameters of the KS191F zener diode: • Rated stabilization voltage: 9.1 V at Ist 10 mA; • Stabilization voltage spread: 8.65... 9.55 V; • Temperature coefficient of stabilization voltage: ±0.0005%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±0.02%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 20 mA; • Maximum allowable power dissipation on the zener diode: 0.2 W; • Working range of ambient temperature: -60... +100 °С. | 0.7 | DIP | 200мВт | 100 pieces. | 9V1 | kd-8 | |||||||
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Zener diode KS119A
#13942
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26121 | СНГ | — |
12 грн.
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— | Stabistors KS119A silicon, diffusion-alloy, low power. Designed for use in voltage stabilizers and as thermal compensating elements. The main technical parameters of the stabistor KS119A: • Rated stabilization voltage: 1.9 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: -0.4%/°С; • Differential resistance: 15 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 1 mA; • The maximum allowable stabilization current: 100 mA; • Maximum allowable power dissipation: 0.18 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | DIP | 180мВт | 100 pieces. | 1V9 | kd-8 | |||||||
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Zener diode KS168A
#13943
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26122 | СНГ | — |
3 грн.
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— | Zener diodes KS168A silicon, alloy, low power. Designed to stabilize the nominal voltage of 6.8 V in the stabilization current range of 3...45 mA. The main technical parameters of the KS168A zener diode: • Rated stabilization voltage: 6.8 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: ±0.06%/°С; • Constant forward voltage: 1 V at Ipr 50 mA; • Zener diode differential resistance: 28 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 45 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | DIP | 300мВт | 100 pieces. | 6V8 | kd-8 | |||||||
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Zener diode D818G
#13945
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26124 | СНГ | — |
12 грн.
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— | Zener diodes D818G silicon, diffusion-alloy, low power, precision. Designed to stabilize the nominal voltage of 9 V in the stabilization current range of 3...33 mA with high requirements for voltage stability in the temperature range of -60...+125 °C. The main technical parameters of the Zener diode D818G: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 7.6... 10 V; • Temperature coefficient of stabilization voltage: +0.006%/°С; • Temporary stabilization voltage instability: ± 0.12%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | DIP | 300мВт | 100 pieces. | 9V | kd-8 | |||||||
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Zener diode D814B
#13946
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26125 | СНГ | — |
3 грн.
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— | Zener diodes D814B silicon, alloy, medium power. Designed to stabilize the voltage of 8.0-9.5 V in the stabilization current range of 3...36 mA. | 0.8 | DIP | 340мВт | 100 pieces. | 9V | kd-8 | |||||||
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Zener diode 2S530A (=KS530A)
#13947
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26126 | СНГ | — |
10 грн.
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— | Zener diodes 2S530A silicon, planar, medium power. Designed to stabilize the rated voltage of 30 V in the stabilization current range of 1...27 mA. The main technical parameters of the zener diode 2S530A: • Rated stabilization voltage: 30 V at Ist 5 mA; • Stabilization voltage spread: 28.5... 31.5 V; • Temperature coefficient of stabilization voltage: ±0.1%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 200 Ohm at Ist 1 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 27 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | DIP | 1Вт | 100 pieces. | 30V | kd-8 | |||||||
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Zener diode KS133A met.
#13963
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26143 | СНГ | — |
4 грн.
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— | The main technical parameters of the KS133A zener diode: • Rated stabilization voltage: 3.3 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: -0.11%/°С; • Constant forward voltage: 1 V at Ipr 50 mA; • Zener diode differential resistance: 65 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 81 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Ambient temperature operating range: -60... +125 °С | 0.8 | DIP | 300мВт | 100 pieces. | 3V3 | kd-8 | |||||||
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Zener diode KS515A
#13966
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26146 | СНГ | — |
15 грн.
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— | The main technical parameters of the KS515A zener diode: • Rated stabilization voltage: 15 V at Ist 5 mA; • Stabilization voltage spread: 13.5... 16.5 V; • Temperature coefficient of stabilization voltage: 0.1%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 200 Ohm at Ist 1 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 53 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С | 0.8 | DIP | 1Вт | 200pcs | 15V | kd-8 | |||||||
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Zener diode KS213B
#14113
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26291 | СНГ | — |
8 грн.
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— | Zener diodes KS213B silicon, alloy, two-anode, low power. Designed to stabilize the nominal voltage of 13 V in the stabilization current range of 3...10 mA and to limit the voltage on both sides. The main technical parameters of the KS213B zener diode: • Rated stabilization voltage: 13 V at Ist 5 mA; • Temperature coefficient of stabilization voltage: 0.08%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 25 Ohm at Ist 5 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 10 mA; • The maximum allowable power dissipation on the zener diode: 0.15 W. | 0.3 | DIP | 150мВт | 200pcs | 13V | — | |||||||
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Stabistor D220S
#14257
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26456 | СНГ | — |
4 грн.
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— | Stabistors D220S silicon, microalloy, low power. Are intended for stabilization of direct and impulse voltage and limitation of voltage impulses. The main technical parameters of the D220S stabistor: • Rated stabilization voltage at Ist 1 mA: 0.59 V; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 50 mA; • Working range of ambient temperature: -60... +120 °С. | 0.4 | DIP | — | 100 pieces. | 0.59V | — | |||||||
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Zener diode KS620A
#15483
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27723 | СНГ | — |
10 грн.
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— | The main technical parameters of the KS620A zener diode: • Rated stabilization voltage: 120 V at Ist 50 mA; • Stabilization voltage spread: 103... 132 V; • Temperature coefficient of stabilization voltage: ±0.2%/°С; • Zener diode differential resistance: 150 Ohm at Ist 50 mA; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 42 mA; • Maximum allowable power dissipation on the zener diode: 5 watts. | 1.5 | Screw | 5Вт | 100 pieces. | 120V | ks620 | |||||||
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Zener diode KS191S
#16204
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28450 | СНГ | — |
14 грн.
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— | Zener diodes KS191S silicon, epitaxial, low power, precision, class 0.02. Designed to stabilize the nominal voltage of 9.1 V in the stabilization current range of 3...20 mA with high requirements for voltage stability. The main technical parameters of the KS191S zener diode: • Rated stabilization voltage: 9.1 V at Ist 10 mA; • Stabilization voltage spread: 8.65... 9.55 V; • Temperature coefficient of stabilization voltage: ±0.005%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±0.02%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 20 mA; • The maximum allowable power dissipation on the zener diode: 0.2 W. | 0.8 | DIP | 200мВт | 100 pieces. | 9V1 | kd-8 | |||||||
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Zener diode 2S113A OS
#16528
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28776 | СНГ | — |
6 грн.
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— | Main technical parameters of stabistor 2S113A: • Rated stabilization voltage: 1.3 V at Ist 10 mA; • Stabilization voltage spread: 1.17... 1.43 V; • Temperature coefficient of stabilization voltage: -0.42...-0.2%/°C; • Temporary instability of stabilization voltage: ±3.5%; • Differential resistance: 15 Ohm at Ist 7.5 mA; • Maximum permissible stabilization current: 100 mA; • Maximum permissible power dissipation: 0.16 W; • Operating range of ambient temperature: -60... +125 °C. | 0.8 | DIP | 160 мВт | 100 pieces. | 1V3 | kd-8 | |||||||
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Zener diode 2S107A OS
#16529
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28777 | СНГ | — |
12 грн.
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— | Main technical parameters of the zener diode 2S107A: • Rated stabilization voltage: 0.7 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: -0.34%/°C; • Minimum permissible stabilization current: 1 mA; • Maximum permissible stabilization current: 120 mA; • Operating range of ambient temperature: -60... +125 °C. | 0.8 | DIP | 300мВт | 100 pieces. | 1V3 | kd-8 |