Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Pin type | Type of shell | Rated capacity, μF | Working voltage, V | Rated capacity tolerance,% | Working temperature, С | Case diameter D, mm | Body length L, mm | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Resistance | Resistor power | Accuracy | Resistor housing type | Working current, A | Number of windings | Polarization | Winding resistance, Ohm | Maximum switching voltage | Winding supply current | Contact set | Diode design |
|---|
Chip K148UN1
#17242
|
29495 | СНГ | 5 шт |
120 грн.
|
|
The K148UN1 microcircuit is a low-frequency power amplifier with an output power of 1 W at a load resistance of 30 ohms. | 14 | — | 311.8-2 | — | — | — | — | — | — | — | — | DIP | — | — | — | — | Amplifiers | — | — | — | 6pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Chip 148UN1
#17241
|
29494 | СНГ | 1 шт |
150 грн.
|
|
The 148UN1 microcircuit is a low-frequency power amplifier with an output power of 1 W at a load resistance of 30 ohms. | 14 | — | 311.8-2 | — | — | — | — | — | — | — | — | DIP | — | — | — | — | Amplifiers | — | — | — | 6pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Diode KD2998G
#17236
|
29489 | СНГ | 19 шт |
120 грн.
|
|
Main technical characteristics of the KD2998G diode: • Uobr and max - Maximum pulse reverse voltage: 35 V; • Inp max - Maximum forward current: 30 A; • fd - Diode operating frequency: 10... 200 kHz; • Unp - Constant forward voltage: no more than 0.7 V at Inp 30 A; • Iobr - Constant reverse current: no more than 20 mA at Uobr 35 V. | 6 | — | — | — | — | — | — | — | — | — | — | Screw | КД-11 | 35V | 30A | — | — | Schottky | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | ||||||||
Diode KD204V
#17235
|
29488 | СНГ | 4 шт |
10 грн.
|
|
Main technical characteristics of the KD204V diode: • Uop and max - Maximum pulse reverse voltage: 50 V; • Inp max - Maximum forward current: 1000 mA; • fd - Diode operating frequency: 1 kHz; • Unp - Continuous forward voltage: no more than 1.4 V at Inp 600 mA; • Iop - Continuous reverse current: no more than 50 µA at Uop 50 V; • treverse - Reverse recovery time: 1.5 µs. | 5 | — | — | — | — | — | — | — | — | — | — | Screw | КД-11 | 50V | 1A | — | — | Rectifier | — | — | 50pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | ||||||||
Diode KD203B
#17113
|
29362 | СНГ | 24 шт |
35 грн.
|
|
Main technical characteristics of the KD203B diode: • Uobp max - Maximum constant reverse voltage: 560 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - Constant forward voltage: no more than 1 V at Inp 10 A; • Iobp - Constant reverse current: no more than 1500 µA at Uobp 800 V. | 12 | — | — | — | — | — | — | — | — | — | — | Screw | — | 560V | 10A | 15A | — | Rectifier | — | — | 25pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | ||||||||
Diode KD206B
#17112
|
29361 | СНГ | 20 шт |
28 грн.
|
|
Diode KD206B silicon, mesa-diffusion, avalanche, rectifier. Designed to convert alternating voltage with a frequency of up to 20 kHz. The main technical characteristics of the KD206B diode: • Uopp max - Maximum direct reverse voltage: 600 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1.2 V at Inp 1000 mA; • Iobr - DC reverse current: no more than 700 µA at Uobr 500 V; • tvoc - Reverse recovery time: 10 µs. | 5.7 | — | — | — | — | — | — | — | — | — | — | Screw | КД-11 | 500V | 10A | — | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | ||||||||
Triacs TS132-50-6
#17111
|
29360 | СНГ | 25 шт |
300 грн.
|
|
22 | — | — | — | — | — | — | — | — | — | — | Cooler | — | 600V | 50A | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor KT825G
#17110
|
29359 | СНГ | 2 шт |
240 грн.
|
|
Main technical characteristics of the KT825G transistor: • Transistor structure: p-n-p; • Рк т max - Continuous dissipated power of the collector with a heat sink: 125 W; • fгр - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: at least 4 MHz; • Uэбо max - Maximum emitter-base voltage at a given reverse emitter current and an open collector circuit: 5 V; • Iк max - Maximum permissible direct collector current: 20 A; • Iк и max - Maximum permissible pulse collector current: 40 A; • h21э - Static current transfer coefficient of the transistor for circuits with a common emitter: 750...18000; • Ск - Collector junction capacitance: no more than 600 pF; • Rke nat - Saturation resistance between collector and emitter: no more than 0.4 Ohm. | 16 | — | — | — | — | — | — | — | — | TO3 | Bipolar | DIP | — | — | — | — | — | — | PNP | 125Вт | 10 pieces. | 90В | 40А | — | 18000 | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
| 29358 | СНГ | 75 шт |
1.50 грн.
|
|
Resistor MLT-1 1.2 kOhm (+/- 5%). | 1.2 | Flexible Leads | — | — | — | — | — | 6 | 12 | — | — | DIP | — | — | — | — | — | — | — | — | 120pcs | — | — | — | — | 1,2 кОм | 1 W | 5 % | metal film | — | — | — | — | — | — | — | — | |||||||||
Diode KD202B
#17108
|
29357 | СНГ | 1 шт |
7 грн.
|
|
KD202B silicon diffusion diodes. Designed to convert alternating voltage with a frequency of up to 5 kHz. Available in a glass-metal case with rigid leads. The diode type and the connection diagram of the electrodes with the leads are shown on the case. Main technical characteristics of the KD202B diode: • uobr and max - Maximum pulse reverse voltage: 50 V; • inp max - Maximum forward current: 5 A; • fd - Diode operating frequency: 1.2 kHz; • unp - Constant forward voltage: no more than 0.9 V at inp 5 A; • iobrp - Constant reverse current: no more than 800 µA at uobr 100 V | 5.2 | — | — | — | — | — | — | — | — | — | — | Screw | КД-11 | 50V | 5A | — | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | ||||||||
Power thyristor T142-80-10
#17092
|
29342 | СНГ | 10 шт |
350 грн.
|
T142-80-10 Low-frequency pin thyristor. Designed for use in converter devices, in DC and AC circuits of various power plants. Available in a metal-glass case with a rigid terminal. Maximum permissible average forward current in the open state - 80 A Repetitive pulse voltage in the closed state and repetitive pulse reverse voltage - 1000 V Cooling is natural or forced air. The designation of the standard rating and the polarity of the terminals are given on the case. Overall dimensions: - overall length - 56 mm - stud length - 16 mm - thread - M10 | 66 | — | — | — | — | — | — | — | — | — | — | Screw | — | 1000V | 80A | — | — | — | — | — | 20pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Diode D215A
#17038
|
29288 | СНГ | 14 шт |
35 грн.
|
|
Main technical characteristics of the D215A diode: • Uobp max - Maximum constant reverse voltage: 200 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - Constant forward voltage: no more than 1.0 V at Inp 10 A; • Iobr - Continuous reverse current: no more than 3000 µA at Uobr 200 V. | 13 | — | — | — | — | — | — | — | — | — | — | Screw | КДЮ-11 | 200V | 10A | — | — | Rectifier | — | — | 50pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | ||||||||
Diode D242A
#17037
|
24628 | СНГ | 63 шт |
30 грн.
|
|
Main technical characteristics of the D242A diode: • Uobp max - Maximum constant reverse voltage: 100 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - Constant forward voltage: no more than 1 V at Inp 10 A; • Iobr - Continuous reverse current: no more than 3000 µA at Uobr 100 V. | 13 | — | — | — | — | — | — | — | — | — | — | Screw | КДЮ-11 | 100V | 10A | — | — | Rectifier | — | — | 50pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | ||||||||
| 29268 | СНГ | 67 шт |
25 грн.
|
4.5 | — | — | — | 6 | — | — | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 10 pieces. | — | — | — | — | — | — | — | — | 0.5 | 1 | neutral | 95 | 36v | AC/DC | 1 switch | — | |||||||||||
| 29266 | СНГ | 8 шт |
8 грн.
|
|
Niobium oxide semiconductor capacitors K53-4, polar, sealed in a metal case. Intended for operation in direct and pulsating current circuits. Features of the K53-4 series capacitors: low and stable leakage currents, large specific capacitance values, improved temperature-frequency characteristics of the capacitance and dielectric loss tangent. | 2.8 | Flexible Leads | — | 22 | 16 | 10 | -60..+85 | 7 | 12 | — | — | DIP | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Varistor CH2-1A 150V 10%
#17014
|
29265 | СНГ | 20 шт |
18 грн.
|
|
Varistors SN2-1A zinc oxide high-linear non-hermetic. They are designed to protect elements and units of various electronic and electrical equipment from voltage in direct, alternating and pulsed current circuits, as well as to stabilize and generate voltages. | 1.6 | — | — | — | 150 | — | — | 16 | — | — | — | DIP | — | — | — | — | — | — | — | — | 80pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
| 29259 | СНГ | 2 шт |
80 грн.
|
Relay RES10 RS4.529.031-03.02 electromagnetic low-current low-frequency, two-position, monostable, controlled by direct current. Designed for switching electrical circuits of direct and alternating current with a frequency of 50 to 1100 Hz. RES10 relays are produced with pin terminals for surface mounting on a printed circuit board through holes with one normally open or one changeover contact. Provides the possibility of use in both printed and surface mounting. They are used for operation as part of electronic switching control circuits in general-purpose and special-purpose electronic equipment. Switches currents of no more than 2 A at voltages up to 250 V, depending on the switching mode. | 7 | — | — | — | 24...40 | — | — | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 24pcs | — | — | — | — | — | — | — | — | 2 | 1 | neutral | 630 | 250v | Constant | 1 short. | — | ||||||||||
Transistor P605
#16946
|
29193 | СНГ | 40 шт |
15 грн.
|
|
Universal germanium transistor of pnp structure. Designed for use in amplifier, generator and pulse stages of low and high frequency up to 30 MHz. | 9.2 | — | — | — | — | — | — | — | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 3Вт | 50pcs | 40В | 1.5А | 30МГц | 60 | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Transistor P217V
#16932
|
29179 | СНГ | 166 шт |
25 грн.
|
|
Main technical characteristics of the P217V transistor: • Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 24 W; • fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.1 MHz; • Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open emitter circuit: 60 V; • Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Iк max - Maximum permissible direct collector current: 7.5 A; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 3 mA; • h21э - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter: more than 5; • Rke nat - Saturation resistance between collector and emitter: no more than 0.25 Ohm. | 11 | — | — | — | — | — | — | — | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 24Вт | 40pcs | 60В | 7,5A | 0,1МГц | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Transistor P217B
#16931
|
29178 | СНГ | 1 шт |
20 грн.
|
|
Main technical characteristics of the P217B transistor: • Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 30 W; • fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.2 MHz; • Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open emitter circuit: 60 V; • Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Iк max - Maximum permissible direct collector current: 7.5 A; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 0.5 mA; • h21э - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter: more than 20; • Rke nat - Saturation resistance between collector and emitter: no more than 0.5 Ohm. | 11 | — | — | — | — | — | — | — | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 30Вт | 40pcs | 60В | 7,5A | 0,1МГц | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Transistor P217A
#16930
|
29177 | СНГ | 13 шт |
20 грн.
|
|
Main technical characteristics of the P217A transistor: • Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 30 W; • fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.1 MHz; • Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open emitter circuit: 60 V; • Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Iк max - Maximum permissible direct collector current: 7.5 A; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 0.5 mA; • h21э - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter: 20... 60; • Rke nat - Saturation resistance between collector and emitter: no more than 0.5 Ohm. | 11 | — | — | — | — | — | — | — | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 30Вт | 40pcs | 60В | 7,5A | 0,1МГц | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Transistor P217
#16929
|
29176 | СНГ | 52 шт |
20 грн.
|
|
Main technical characteristics of the P217 transistor: • Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 30 W; • fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.1 MHz; • Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open: 60 V; • Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Iк max - Maximum permissible direct collector current: 7.5 A; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 0.5 mA; • h21э - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter: more than 15; • Rke nat - Saturation resistance between collector and emitter: no more than 0.5 Ohm. | 11 | — | — | — | — | — | — | — | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 30Вт | 40pcs | 60В | 7,5A | 0,1МГц | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Transistor P302
#16928
|
29175 | СНГ | 257 шт |
15 грн.
|
|
Transistors P302 silicon alloy structure pnp universal. Intended for use in switching devices, output stages of low-frequency amplifiers, DC-DC converters . | 10 | — | — | — | — | — | — | — | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 7Вт | 50pcs | 30В | 500мА | 0,2МГц | 10 | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Transistor P216G
#16926
|
29173 | СНГ | 63 шт |
15 грн.
|
|
Main technical characteristics of the P216G transistor: • Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 24 W; • fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.1 MHz; • Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open emitter circuit: 50 V; • Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Iк max - Maximum permissible direct collector current: 7.5 A; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 2 mA; • h21Э - Static current transfer coefficient for the common emitter circuit in large signal mode: >5; • Rke nat - Saturation resistance between collector and emitter: no more than 0.25 Ohm. | 10 | — | — | — | — | — | — | — | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 24Вт | 20pcs | 50В | 7,5A | 0,1МГц | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Transistor 1T403G (=GT403G)
#16925
|
29172 | СНГ | 7 шт |
25 грн.
|
|
Transistor 1T403G germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, converters and DC stabilizers. | 3 | — | — | — | — | — | — | — | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 4Вт | 100 pieces. | 45В | 1,25А | — | 150 | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Transistor 1T403I (=GT403I)
#16924
|
29171 | СНГ | 8 шт |
25 грн.
|
|
Transistor 1T403I germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, converters and DC stabilizers. | 3 | — | — | — | — | — | — | — | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 4Вт | 100 pieces. | 60В | 1,25А | — | 30 | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Transistor 1T403V (=GT403V)
#16923
|
29170 | СНГ | 13 шт |
25 грн.
|
|
Transistor 1T403V germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, converters and DC stabilizers. | 3 | — | — | — | — | — | — | — | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 4Вт | 100 pieces. | 45В | 1,25А | — | 60 | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Transistor 1T403A (=GT403A)
#16922
|
29169 | СНГ | 7 шт |
25 грн.
|
|
Transistor 1T403A germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, converters and DC stabilizers. | 3 | — | — | — | — | — | — | — | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 4Вт | 100 pieces. | 30В | 1,25А | — | 60 | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
| 29168 | СНГ | 1 шт |
25 грн.
|
|
Transistor 1T403Zh germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, converters and DC stabilizers. | 3 | — | — | — | — | — | — | — | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 4Вт | 100 pieces. | 60В | 1,25А | — | 60 | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor MP102
#16894
|
29141 | СНГ | 115 шт |
7 грн.
|
|
Transistors MP102 silicon alloy npn amplifying low-frequency with non-standard noise figure at a frequency of 1 kHz. Designed to amplify and switch low frequency signals. | 1.8 | — | — | — | — | — | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | 100мВт | 100 pieces. | 10В | 20мА | 0,5МГц | 45 | — | — | — | — | — | — | — | — | — | — | — | — |
