Transistor P217B

Main technical characteristics of the P217B transistor:
• Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 30 W;
• fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.2 MHz;
• Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open emitter circuit: 60 V;
• Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V;
• Iк max - Maximum permissible direct collector current: 7.5 A;
• Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 0.5 mA;
• h21э - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter: more than 20;
• Rke nat - Saturation resistance between collector and emitter: no more than 0.5 Ohm.