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Bipolar transistors
Domestic transistors

Brand «INTEGRAL»

Results: 36

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Type of shell Transistor case type Transistor type Mounting type Appointment Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
Transistor KT837U
Transistor KT837U
#16662
 28901 INTEGRAL 65 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors are silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 — TO220 Bipolar DIP — PNP — — 30Вт 100 pieces. 40В 7,5A 1МГц 80
Transistor KT645B
Transistor KT645B
#15924
 28158 INTEGRAL 8974 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 — TO92 Bipolar DIP — NPN — — 500мВт 1000pcs 40В 300мА — —
Transistor KT837Zh
Transistor KT837Zh
#15472
 27711 INTEGRAL 266 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 — TO220 Bipolar DIP — PNP — — 30Вт 100 pieces. 40В 7,5A 1МГц 80
Transistor KT837M
Transistor KT837M
#15471
 27710 INTEGRAL 14 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 — TO220 Bipolar DIP — PNP — — 30Вт 100 pieces. 70В 7,5A 1МГц 80
Transistor KT837V
Transistor KT837V
#15470
 27709 INTEGRAL 1 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 — TO220 Bipolar DIP — PNP — — 30Вт 100 pieces. 70В 7,5A 1МГц 150
Transistor KT837I
Transistor KT837I
#15469
 27708 INTEGRAL 22 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 — TO220 Bipolar DIP — PNP — — 30Вт 100 pieces. 40В 7,5A 1МГц 80
Transistor KT3130G9
Transistor KT3130G9
#14527
 26743 INTEGRAL 229 шт
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
0.1 — SOT23 Bipolar SMD — NPN — — 100мВт 1000pcs 15В 100мА 150МГц 1000
Transistor KT837B
Transistor KT837B
#14410
 26618 INTEGRAL 1 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 — TO220 Bipolar DIP — PNP — — 30Вт 100 pieces. 70В 7,5A 1МГц 80
Transistor KT352A
Transistor KT352A
#13753
 25921 INTEGRAL 2 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
The main technical characteristics of the transistor KT352A: • Transistor structure: pnp; • Рк max - Constant power dissipation of the collector: 300 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 20 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik and max - The maximum allowable collector pulse current: 200 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1 μA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 25... 120; • Sk - Collector junction capacitance: no more than 15 pF; • Rke us - Saturation resistance between collector and emitter: no more than 3 ohms. 0.3 — TO92 Bipolar DIP — PNP — — 300мВт 500pcs 15В 200мА 200МГц 120
Transistor KT361K-2
Transistor KT361K-2
#11373
 23484 INTEGRAL 209 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 — TO92 Bipolar DIP — PNP — — 150мВт 1000pcs 60В 100мА 250МГц 350
Chip IL2418 (=KR1064PP1)
Chip IL2418 (=KR1064PP1)
#11370
 23479 INTEGRAL 31 шт
17 грн.
10+16,15 грн.
50+15,30 грн.
100+13,60 грн.
0.5 DIP8 — — DIP Telephony — — — — 100 pieces. — — — —
Transistor KT837E
Transistor KT837E
#10809
 22999 INTEGRAL 178 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 — TO220 Bipolar DIP — PNP — — 30Вт 100 pieces. 55В 7,5A 1МГц 150
Transistor KT837L
Transistor KT837L
#10739
 22804 INTEGRAL 19 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 — TO220 Bipolar DIP — PNP — — 30Вт 100 pieces. 60В 7,5A 1МГц 40
Chip EKF1533IR24 (=SN74ALS299)
Chip EKF1533IR24 (=SN74ALS299)
#10373
 22380 INTEGRAL 10 шт
16 грн.
10+15,20 грн.
50+14,40 грн.
100+12,80 грн.
Eight-bit universal shift register with tri-state output. 0.7 SO20 — — SMD Logics — — — — 30pcs — — — —
IN74AC00N (=KR1554LA3)
IN74AC00N (=KR1554LA3)
#10330
 22316 INTEGRAL 38 шт
19 грн.
10+18,05 грн.
50+17,10 грн.
100+15,20 грн.
4 logical elements 2I-NOT. 1 DIP14 — — DIP Logics — — — — 100 pieces. — — — —
Chip ST7071 (=EKR1436XA1,TEA1068)
Chip ST7071 (=EKR1436XA1,TEA1068)
#10329
 22315 INTEGRAL 20 шт
23 грн.
10+21,85 грн.
50+20,70 грн.
100+18,40 грн.
— 1.3 DIP18 — — DIP Amplifiers — — — — 80pcs — — — —
IN74AC34N (=KR1554LI9)
IN74AC34N (=KR1554LI9)
#10326
 22312 INTEGRAL 56 шт
19 грн.
10+18,05 грн.
50+17,10 грн.
100+15,20 грн.
6 logic elements I. 1 DIP14 — — DIP Logics — — — — 100 pieces. — — — —
Chip IN74AC241N (EKR1554AP4)
Chip IN74AC241N (EKR1554AP4)
#10322
 22301 INTEGRAL 68 шт
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
2 DIP20 — — DIP Logics — — — — 70pcs — — — —
Transistor KT645A
Transistor KT645A
#10316
 22265 INTEGRAL 628 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 — TO92 Bipolar DIP — NPN — — 500мВт 1000pcs 50В 300мА — —
Transistor KT660A
Transistor KT660A
#10314
 22263 INTEGRAL 1072 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
0.3 — TO92 Bipolar DIP — NPN — — 500мВт 1000pcs 45В 800мА — 220
Transistor KT209E
Transistor KT209E
#10313
 22262 INTEGRAL 425 шт
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
0.3 — TO92 Bipolar DIP — PNP — — 200мВт 1000pcs 30В 300мА — 240
Transistor KT3130A9 (=ВСW71)
Transistor KT3130A9 (=ВСW71)
#10107
 21846 INTEGRAL 626 шт
2.50 грн.
10+2,37 грн.
50+2,25 грн.
100+2 грн.
0.1 — SOT23 Bipolar SMD — NPN — — 100мВт 1000pcs 40В 100мА 150МГц 250
Transistor KT6115V (=SS8550)
Transistor KT6115V (=SS8550)
#10106
 21845 INTEGRAL 397 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 — TO92 Bipolar DIP — PNP — — 1Вт 1000pcs 25В 1.5А 100МГц 300
Transistor KT6114V (=SS8050)
Transistor KT6114V (=SS8050)
#10102
 21840 INTEGRAL 413 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 — TO92 Bipolar DIP — NPN — — 1Вт 1000pcs 25В 1.5А 100МГц 80
Transistor KT520A (=MPSA42)
Transistor KT520A (=MPSA42)
#10101
 21839 INTEGRAL 409 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 — TO92 Bipolar DIP — NPN — — 625мВт 1000pcs 300В 500мА 50МГц 40
Transistor BD139-16 (=KT815G)
Transistor BD139-16 (=KT815G)
#9907
 21707 INTEGRAL 636 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
500+4,20 грн.
— 1 — TO126 Bipolar DIP — NPN — — 12.5Вт 1000pcs 80В 1.5А — —
Chip IN74AC21N (=KR1554LI6)
Chip IN74AC21N (=KR1554LI6)
#9775
 21318 INTEGRAL 290 шт
13 грн.
10+12,35 грн.
50+11,70 грн.
100+10,40 грн.
2 logic elements 4I. 1 DIP14 — — DIP Logics — — — — 100 pieces. — — — —
Chip IL7909C (=KA7909,KR1162EN9A,7909)
Chip IL7909C (=KA7909,KR1162EN9A,7909)
#3541
 22801 INTEGRAL 22 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Stabilizer -9V/1A 2.5 TO-220 — — DIP Nutrition — — — — 100 pieces. — — — —
Transistor KT837F
Transistor KT837F
#12332
 24682 INTEGRAL —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 — TO220 Bipolar DIP — PNP — — 30Вт 100 pieces. 40В 7,5A 1МГц 150
Transistor KP959A
Transistor KP959A
#11371
 23480 INTEGRAL —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — KP959A silicon key epitaxial-planar transistors with a vertical n-type channel with static induction are designed for use in high-frequency power supply circuits and other high-speed key circuits of electronic equipment. 0.6 — TO126 Field DIP — MOS n-channel 220В 200мА 7Вт 100 pieces. — — — —