Transistor KT352A

  • Transistor KT352A
Vendor code: 25921
in stock (4 pc.)
3 грн.
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Название Скидка Скидка, % Цена
10+ 0.15 грн. 5 2.85 грн.
50+ 0.30 грн. 10 2.70 грн.
100+ 0.60 грн. 20 2.40 грн.

The main technical characteristics of the transistor KT352A:
• Transistor structure: pnp;
• Рк max - Constant power dissipation of the collector: 300 mW;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz;
• Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 20 V;
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V;
• Ik and max - The maximum allowable collector pulse current: 200 mA;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1 μA;
• h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 25... 120;
• Sk - Collector junction capacitance: no more than 15 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 3 ohms.

Brand nameINTEGRAL
StructurePNP
Transistor typeBipolar
Power300мВт
Transistor case typeTO92
Mounting typeDIP
Weight g.0.3
Factory packaging500pcs
Collector-emitter voltage15В
Collector current200мА
Current gain120
Frequency200МГц

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