Transistor KT352A

Manufacturer INTEGRAL
SKU 25921
Categories Domestic transistors
Features
Type Description
Brand name INTEGRAL
Structure PNP
Transistor type Bipolar
Power 300мВт
Transistor case type TO92
Mounting type DIP
Weight g. 0.3
Factory packaging 500pcs
Collector-emitter voltage 15В
Collector current 200мА
Current gain 120
Frequency 200МГц
Description

The main technical characteristics of the transistor KT352A:
• Transistor structure: pnp;
• Рк max - Constant power dissipation of the collector: 300 mW;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz;
• Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 20 V;
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V;
• Ik and max - The maximum allowable collector pulse current: 200 mA;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1 μA;
• h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 25... 120;
• Sk - Collector junction capacitance: no more than 15 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 3 ohms.