Transistor P210A

Manufacturer СНГ
SKU 24610
Categories Domestic transistors
Features
Type Description
Brand name СНГ
Structure PNP
Transistor type Bipolar
Power 60Вт
Mounting type DIP
Weight g. 34
Factory packaging 10 pieces.
Collector-emitter voltage 65В
Collector current 12А
Current gain 15
Description

The main technical characteristics of the P210A transistor:
• Transistor structure: pnp
• Рк t max - Constant power dissipation of the collector with a heat sink: 60 W;
• fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz;
• Ukeo samples - Breakdown voltage collector-emitter at a given collector current and base open circuit: 65 V;
• Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 25 V;
• Ik max - Maximum allowable DC collector current: 12 A;
• Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 8 mA;
• h21E - Static current transfer coefficient for a common emitter circuit in large signal mode: more than 15.