Transistor 2T809A (=KT809A)

The main technical characteristics of the transistor 2T809A:
• Transistor structure: npn;
• Рк t max - Constant power dissipation of the collector with a heat sink: 40 W;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 5.1 MHz;
• Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 400 V;
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V;
• Ik max - Maximum allowable DC collector current: 3 A;
• Ik and max - The maximum allowable collector pulse current: 5 A;
• Iкеr - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 3 mA (400 V);
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 15... 100;
• Sk - Collector junction capacitance: no more than 270 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 0.75 Ohm.