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transistors

Results: 3670

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
23559 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
— Transistors KT502B silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters 0.3 TO92 Bipolar DIP PNP — — 350мВт 1000pcs 25В 350мА 5МГц 240
23560 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
— Transistors KT502V silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters 0.3 TO92 Bipolar DIP PNP — — 350мВт 1000pcs 40В 350мА 5МГц 120
23561 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
— Transistors KT502G silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters 0.3 TO92 Bipolar DIP PNP — — 350мВт 1000pcs 40В 350мА 5МГц 240
23562 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
— Transistors KT502E silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters 0.3 TO92 Bipolar DIP PNP — — 350мВт 1000pcs 80В 350мА 5МГц 120
23565 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
— Transistors KT503V silicon epitaxial-planar structures npn universal. Designed for use in low-frequency amplifiers, operational and differential amplifiers, converters, pulse devices. 0.3 TO92 Bipolar DIP NPN — — 350мВт 1000pcs 40В 350мА 5МГц 120
23566 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
— Transistors KT503G silicon epitaxial-planar structures npn universal. Designed for use in low-frequency amplifiers, operational and differential amplifiers, converters, pulse devices. 0.3 TO92 Bipolar DIP NPN — — 350мВт 1000pcs 40В 350мА 5МГц 240
23567 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
— 0.3 TO92 Bipolar DIP PNP — — 350мВт 1000pcs 60В 350мА — 120
23568 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
— 0.3 TO92 Bipolar DIP PNP — — 350мВт 1000pcs 60В 350мА — 120
23569 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
— 0.3 TO92 Bipolar DIP PNP — — 350мВт 1000pcs 25В 350мА — 120
23571 СНГ —
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
— 0.3 TO92 Bipolar DIP PNP — — 350мВт 1000pcs 45В 350мА — 160
23572 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
— 0.3 TO92 Bipolar DIP PNP — — 350мВт 1000pcs 45В 350мА — 60
23573 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
— 0.3 TO92 Bipolar DIP NPN — — 250мВт 1000pcs 20В 200мА — 1000
23575 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
— 0.3 TO92 Bipolar DIP PNP — — 350мВт 1000pcs 30В 350мА — 60
23576 ST MICROELECTRONICS —
32 грн.
10+30,40 грн.
50+28,80 грн.
100+25,60 грн.
500+22,40 грн.
— 5.7 TO3P Bipolar DIP NPN — — 50Вт 30pcs 1.5кВ 8А — —
23848 СНГ —
11 грн.
10+10,45 грн.
50+9,90 грн.
100+8,80 грн.
— KP303D silicon epitaxial-planar field-effect transistors with a gate based on a pn junction and an n-type channel. 0.4 КТ-1 Field DIP MOS n-channel 25В 20мА 200мВт 100 pieces. — — — —
23849 СНГ —
11 грн.
10+10,45 грн.
50+9,90 грн.
100+8,80 грн.
— KP303V silicon epitaxial-planar field-effect transistors with a gate based on a pn junction and an n-type channel. 0.4 КТ-1 Field DIP MOS n-channel 25В 20мА 200мВт 100 pieces. — — — —
23914 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
— 0.3 TO92 Bipolar DIP PNP — — 300мВт 1000pcs 25В 200мА 200МГц 140
24034 СНГ —
28 грн.
10+26,60 грн.
50+25,20 грн.
100+22,40 грн.
— Transistors 2T625AM-2 silicon epitaxial-planar structures npn switching. Are intended for application in pulse devices of the pressurized equipment. Unpackaged with a protective coating and flexible leads. 1.6 — Bipolar SMD NPN — — 1Вт 100 pieces. 40В 1А 200МГц 120
24036 СНГ —
38 грн.
10+36,10 грн.
50+34,20 грн.
100+30,40 грн.
— Silicon epitaxial-planar npn frameless high-frequency transistors. 1.6 — Bipolar — NPN — — — 50pcs — — — 180
24126 СНГ —
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
— Transistors P701 silicon alloy-diffusion structures npn amplifying low-frequency. Designed for use in amplifiers and generators of radio electronic devices. 10 — Bipolar DIP NPN — — 10Вт 20pcs 40В 500мА 20МГц 40
24129 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
— 0.3 TO92 Bipolar DIP PNP — — 300мВт 1000pcs 25В 200мА 200МГц 220
24130 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
— 0.3 TO92 Bipolar DIP PNP — — 300мВт 1000pcs 20В 200мА 200МГц 800
24131 СНГ —
50 грн.
10+47,50 грн.
50+45 грн.
100+40 грн.
— Transistors P702 silicon mezaplanar structures npn amplifying. Designed for use in the output stages of low-frequency amplifiers, switching devices, converters and DC voltage stabilizers. 22 КТЮ-3-3 Bipolar DIP NPN — — 40Вт 20pcs 60В 2А 4МГц 25
24243 СНГ —
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
— Transistors P308 silicon planar npn switching low-frequency low-power. Designed for use in switching circuits and DC voltage converters. 1.5 КТЮ-3-6 Bipolar DIP NPN — — 250мВт 100 pieces. 120В 30мА 20МГц 90
24244 СНГ —
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
— KT602B Transistors silicon planar structures npn. Designed to generate and amplify signals. 3.2 КТЮ-3-9 Bipolar DIP NPN — — 2.8Вт 100 pieces. 100В 75мА 150МГц 220
24245 СНГ —
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
— Transistors KT608B silicon epitaxial-planar structures npn switching. Designed for use in high-speed pulsed and high-frequency devices. 1.5 КТЮ-3-6 Bipolar DIP NPN — — 500мВт 100 pieces. 60В 400мА 200МГц 160
24246 СНГ —
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
— KT604AM Transistors silicon mezaplanarny structures npn. 1 TO126 Bipolar DIP NPN — — 3Вт 200pcs 250В 200мА 40МГц 40
24247 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
— Designed for use in low-frequency amplifiers, power amplifiers, video amplifiers, automotive electronic devices, pulse and switching devices, in computer terminal devices. 1 TO126 Bipolar DIP PNP — — 1Вт 100 pieces. 60В 1.5А 80МГц 160
24248 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
— KT611AM Transistors silicon mezaplanar structures npn amplifying. Designed for use in amplifiers and generators. 1 TO126 Bipolar DIP NPN — — 3Вт 100 pieces. 180В 100мА 60МГц 40
24249 СНГ —
160 грн.
10+152 грн.
50+144 грн.
100+128 грн.
— Transistors 2T607A-4 silicon epitaxial-planar structures npn generator. Designed for use in generators and amplifiers in sealed equipment. 0.4 — Bipolar SMD NPN — — 1.5Вт 8pcs 35В 150мА 0,7МГц —