Transistor 2T306B (=KT306B)
| Manufacturer | СНГ |
| SKU | |
| Categories | Domestic transistors |
Features
| Type | Description | |
|---|---|---|
| Brand name | СНГ | |
| Structure | NPN | |
| Transistor type | Bipolar | |
| Power | 150мВт | |
| Transistor case type | КТЮ-3-1 | |
| Mounting type | DIP | |
| Weight g. | 0.6 | |
| Factory packaging | 100 pieces. | |
| Collector-emitter voltage | 10В | |
| Collector current | 30мА | |
| Current gain | 120 | |
| Frequency | 500МГц |
Description
Transistors 2T306B silicon epitaxial-planar structures npn switching and amplifying with non-normalized noise figure.
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|
|
M2000NM, K10x6x3, Ring ferrite core
2 грн.
|
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Chip LM386(smd)
5 грн.
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|
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3 грн.
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4 грн.
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8 грн.
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11 грн.
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Diode 1D507A (=GD507A)
3 грн.
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M2000NM1, K28x16x12, Ring ferrite core
18 грн.
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M2000NM1-36, K16x10x4.5, Ring ferrite core
4 грн.
|