Transistor MP10B

Transistor MP10 germanium alloyed npn amplifying low-frequency with non-normalized noise factors.

Designed to amplify low frequency signals.

The main technical characteristics of the MP10B transistor:
• Transistor structure: npn
• Рк max - Constant power dissipation of the collector: 150 mW;
• fh21b - The limiting frequency of the transistor current transfer coefficient for circuits with a common emitter and a common base: at least 1 MHz;
• Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 15 V;
• Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V;
• Ik max - Maximum allowable DC collector current: 20 mA;
• Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 50 μA;
• h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter and a common base, respectively: 25...50;
• Sk - Collector junction capacitance: no more than 60 pF;
• tk - Time constant of the feedback circuit at high frequency: no more than 5000 ps;
• Ksh - Transistor noise figure: no more than 10 dB at a frequency of 1 kHz.