Transistor P214B

  • Transistor P214B
Vendor code: 24700
in stock (139 pc.)
15 грн.
Доступные скидки
Название Скидка Скидка, % Цена
10+ 0.75 грн. 5 14.25 грн.
50+ 1.50 грн. 10 13.50 грн.
100+ 3 грн. 20 12 грн.

The main technical characteristics of the P214B transistor:
• Transistor structure: pnp
• Рк t max - Constant power dissipation of the collector with a heat sink: 11.5 W;
• fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz;
• Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 60 V;
• Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V;
• Ik max - Maximum allowable DC collector current: 5 A;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.15 mA;
• h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 20...150;
• Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm.

Brand nameСНГ
Transistor typeБиполярный
Mounting typeDIP
Weight g.10
Factory packaging20шт.
Collector-emitter voltage55В
Collector current
Current gain150

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