Transistor P215

Transistors P215 germanium alloy structures pnp universal.
Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters.
The main technical characteristics of the P215 transistor:
• Transistor structure: pnp
• Рк t max - Constant power dissipation of the collector with a heat sink: 10 W;
• fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz;
• Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 80 V;
• Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V;
• Ik max - Maximum allowable DC collector current: 5 A;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.3 mA;
• h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 20... 150;
• Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm.