Transistor KT837K

Transistors KT837K silicon epitaxial-diffusion structures pnp switching.
Designed for use in amplifiers and switching devices.

The main technical characteristics of the transistor KT837K:
• Transistor structure: pnp;
• Рк t max - Constant power dissipation of the collector with a heat sink: 30 W;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 1 MHz;
• Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 45 V;
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 15 V;
• Ik max - Maximum allowable DC collector current: 7.5 A;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.15 mA;
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 50... 150;
• Rke us - Saturation resistance between collector and emitter: no more than 0.25 Ohm.