Transistor KT848A

Transistors KT848A silicon mezaplanar structures npn amplifying.
Are intended for application in electronic circuits of ignition of the automobile radio-electronic equipment.
The main technical characteristics of the transistor KT848A:
• Transistor structure: npn;
• Рк t max - Constant power dissipation of the collector with a heat sink: 35 W;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 3 MHz;
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 15 V;
• Ik max - Maximum allowable DC collector current: 15 A;
• Iкer - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 3 mA (400V);
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 20;
• Rke us - Saturation resistance between collector and emitter: no more than 0.2 Ohm.